Semiconductor light-emitting device
    3.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号:US09391238B2

    公开(公告)日:2016-07-12

    申请号:US14145153

    申请日:2013-12-31

    Abstract: A semiconductor light-emitting device includes a light-emitting structure that includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, an electrode layer contacting one of the first conductive semiconductor layer and the second conductive semiconductor layer, and a bonding conductive layer connected to the electrode layer. The bonding conductive layer includes a main bonding layer having a recess area defined by a stepped portion on a surface opposite to a surface facing the electrode layer, and a filling bonding layer filling at least a part of the recess area.

    Abstract translation: 半导体发光器件包括发光结构,其包括第一导电半导体层,有源层,第二导电半导体层,接触第一导电半导体层和第二导电半导体层之一的电极层,以及 连接到电极层的导电层。 接合导电层包括主接合层,其具有由与面向电极层的表面相对的表面上的阶梯部分限定的凹部区域,以及填充凹部区域的至少一部分的填充接合层。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    5.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20140209955A1

    公开(公告)日:2014-07-31

    申请号:US14145153

    申请日:2013-12-31

    Abstract: A semiconductor light-emitting device includes a light-emitting structure that includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, an electrode layer contacting one of the first conductive semiconductor layer and the second conductive semiconductor layer, and a bonding conductive layer connected to the electrode layer. The bonding conductive layer includes a main bonding layer having a recess area defined by a stepped portion on a surface opposite to a surface facing the electrode layer, and a filling bonding layer filling at least a part of the recess area.

    Abstract translation: 半导体发光器件包括发光结构,其包括第一导电半导体层,有源层,第二导电半导体层,接触第一导电半导体层和第二导电半导体层之一的电极层,以及 连接到电极层的导电层。 接合导电层包括主接合层,其具有由与面向电极层的表面相对的表面上的阶梯部分限定的凹部区域,以及填充凹部区域的至少一部分的填充接合层。

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