公开(公告)号：US10671524B2

公开(公告)日：2020-06-02

申请号：US16173390

申请日：2018-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkwon Moon ,  Seung-Yeon Lee ,  Heewon Lee ,  In Hwan Doh ,  NamWook Kang

IPC: G06F12/02 ,  G06F3/06

Abstract: A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.

公开(公告)号：US20190065363A1

公开(公告)日：2019-02-28

申请号：US16173390

申请日：2018-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkwon MOON ,  Seung-Yeon Lee ,  Heewon Lee ,  In Hwan Doh ,  NamWook KANG

IPC: G06F12/02 ,  G06F3/06

CPC classification number: G06F12/0246 ,  G06F3/0614 ,  G06F3/0652 ,  G06F3/0679 ,  G06F12/0253 ,  G06F2212/1016 ,  G06F2212/1032 ,  G06F2212/7205 ,  G06F2212/7209

Abstract: A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.

公开(公告)号：US09606864B2

公开(公告)日：2017-03-28

申请号：US13947219

申请日：2013-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Yeon Lee ,  Hee-Woong Kang ,  Jong-Nam Baek ,  San Song

IPC: G11C29/00 ,  G06F11/10 ,  G11C11/56 ,  G11C16/26 ,  G11C16/34

CPC classification number: G06F11/1068 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/3431

Abstract: A nonvolatile memory device includes a memory cell array including a selected page including multiple error correction code (ECC) units, and a voltage generation unit configured to generate a read voltage to read data from the selected page. Read voltage levels are set individually for the respective ECC units according to data detection results for each of the ECC units. During a read retry section performed with respect to selected ECC units of the selected page for which read errors have been detected, a re-read operation of the selected ECC units is performed according to the respective read voltage levels set for the selected ECC units.