-
公开(公告)号：US20210357319A1
公开(公告)日：2021-11-18
申请号：US17386782
申请日：2021-07-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangkwon MOON , Kyung Ho KIM , Seunguk SHIN , Sung WON JUNG
IPC: G06F12/02
Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.
-
2.发明申请公开(公告)号：US20210118516A1
公开(公告)日：2021-04-22
申请号：US17113451
申请日：2020-12-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunkyo OH , Sangkwon MOON
Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory, and a controller that stores an on-cell count in the buffer memory, the on-cell count indicating a number of memory cells, which are turned on by a read level applied to a reference word line of each of the plurality of blocks, from among memory cells connected to the reference word line.
-
公开(公告)号：US20190065363A1
公开(公告)日：2019-02-28
申请号：US16173390
申请日：2018-10-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sangkwon MOON , Seung-Yeon Lee , Heewon Lee , In Hwan Doh , NamWook KANG
CPC classification number: G06F12/0246 , G06F3/0614 , G06F3/0652 , G06F3/0679 , G06F12/0253 , G06F2212/1016 , G06F2212/1032 , G06F2212/7205 , G06F2212/7209
Abstract: A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.
-
公开(公告)号：US20200278926A1
公开(公告)日：2020-09-03
申请号：US16877802
申请日：2020-05-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangkwon MOON , Kyung Ho KIM , Seunguk SHIN , Sung WON JUNG
IPC: G06F12/02
Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.
-
Patent Agency Ranking
5.发明申请公开(公告)号：US20200152279A1
公开(公告)日：2020-05-14
申请号：US16448545
申请日：2019-06-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunkyo OH , Sangkwon MOON
Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory, and a controller that stores an on-cell count in the buffer memory, the on-cell count indicating a number of memory cells, which are turned on by a read level applied to a reference word line of each of the plurality of blocks, from among memory cells connected to the reference word line.
-
公开(公告)号：US20250068559A1
公开(公告)日：2025-02-27
申请号：US18590574
申请日：2024-02-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Woohyun KANG , Jinyoung LEE , Jisoo KIM , Sangkwon MOON , Hyunkyo OH , Donghoo LIM , Jin gu JEONG
IPC: G06F12/02
Abstract: A storage device includes a non-volatile memory device configured to store fast cell information obtained from a threshold voltage distribution formed through a one-shot program for memory cells; and a storage controller configured to read the fast cell information from the non-volatile memory device during booting or initialization to perform mapping a fast cell area based on a fast cell management policy, wherein the fast cell information is acquired through the one-shot program performed in a test stage or a mass production evaluation stage, and is stored in the non-volatile memory device before a firmware of the storage controller is executed.
-
公开(公告)号：US20250060885A1
公开(公告)日：2025-02-20
申请号：US18421352
申请日：2024-01-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Woohyun KANG , Garam KIM , Jisoo KIM , Sangkwon MOON , Hyunkyo HO , Jin Gu JEONG , Youngjun HWANG
IPC: G06F3/06
Abstract: A storage device according to an embodiment includes a memory device configured to apply a first program voltage and a first verification voltage to a first word line and output, based on a program state of each of a plurality of memory cells connected to the first word line, a speed information representing a speed characteristic of each of the plurality of memory cells; and a memory controller configured to determine at least one memory cell to be programmed into a predetermined program state; determine, among the at least one memory cell, at least one target memory cell having a first speed characteristic based on the speed information; and perform a state-shaping operation to convert a data corresponding to the predetermined program state for the at least one target memory cell into a value corresponding to a program state different from the predetermined program state.
-
公开(公告)号：US20250061937A1
公开(公告)日：2025-02-20
申请号：US18934502
申请日：2024-11-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Su Chang JEON , Woohyun KANG , Seungkyung RO , Sangkwon MOON , Heewon LEE
IPC: G11C11/408 , G06F3/06
Abstract: Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.
-
公开(公告)号：US20240176700A1
公开(公告)日：2024-05-30
申请号：US18512613
申请日：2023-11-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngjoo SEO , Youngdeok SEO , Sangkwon MOON , Hyunkyo OH , Hee-Tai OH , Heewon LEE , Jisoo KIM
CPC classification number: G06F11/1068 , G06F11/076
Abstract: An operation method of a storage controller, which is configured to control a nonvolatile memory device, includes initiating a first instance of a respective reliability operation for a respective memory block included in the nonvolatile memory device, the respective reliability operation including detecting a degradation level of the respective memory block and setting a respective skip reference value based on the detected degradation level; determining whether a respective number of consecutively skipped instances of the respective reliability operation is less than the respective skip reference value; and selectively skipping or performing a next instance of the respective reliability operation based on the determination result.
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.019 seconds)
