公开(公告)号：US20250040303A1

公开(公告)日：2025-01-30

申请号：US18775217

申请日：2024-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghak KIM ,  Punjae CHOI ,  Sooyoung PARK ,  Shigeru INOUE

IPC: H01L33/32 ,  H01L25/075 ,  H01L33/02 ,  H01L33/04 ,  H01L33/14

Abstract: A light emitting element is provided. The light emitting element includes: a light emitting stack including an active layer between an N-type nitride semiconductor layer and a P-type nitride semiconductor layer, the light emitting stack having a width of 5 nm or more and 200 μm or less; a first electrode connected to the N-type nitride semiconductor layer; and a second electrode connected to the P-type nitride semiconductor layer. The P-type nitride semiconductor layer has a first surface, adjacent to the active layer, and a second surface, opposite to the first surface, and includes AlxInyGazN (0≤x

公开(公告)号：US20160118533A1

公开(公告)日：2016-04-28

申请号：US14887466

申请日：2015-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： MISAICHI TAKEUCHI ,  Sam Mook KANG ,  Shigeru INOUE ,  Ki Se KIM

IPC: H01L33/00 ,  H01L33/24 ,  H01L33/06

CPC classification number: H01L33/005 ,  H01L33/007 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24

Abstract: A method of manufacturing a nanostructure semiconductor light emitting device may include: stacking a mask layer on a conductive base layer and forming a through hole penetrating the mask layer; growing a nanocore through the through hole from the conductive base layer using precursor gas including indium-containing precursor gas in a mixed gas atmosphere of nitrogen and hydrogen; removing the mask layer; and sequentially growing an active layer and a first conductivity type semiconductor layer on a surface of the nanocore.

Abstract translation: 制造纳米结构半导体发光器件的方法可以包括：在导电基底层上堆叠掩模层并形成穿透掩模层的通孔; 在氮和氢的混合气体气氛中，使用包括含铟前体气体的前体气体，从导电性基底层通过通孔生长纳米孔; 去除掩模层; 并在纳米孔的表面上依次生长有源层和第一导电型半导体层。