公开(公告)号：US20190165216A1

公开(公告)日：2019-05-30

申请号：US15986120

申请日：2018-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sam Mook KANG ,  Joo Sung Kim ,  Mi Hyun Kim ,  Young Hwan Park

IPC: H01L33/48 ,  H01L33/60 ,  H01L33/54 ,  H01L33/36 ,  H01L33/62 ,  H01L33/00

Abstract: An ultraviolet light emitting device package, comprising: a growth substrate having a first surface, a second surface corresponding thereto, and a light emitting window penetrating through the first surface and the second surface, a reflective layer disposed on an internal wall of the light emitting window, a light transmissive cover disposed on the first surface and covering the light emitting window, a light emitting structure disposed on the second surface to cover the light emitting window and including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and a first electrode and a second electrode, connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively.

公开(公告)号：US20160351748A1

公开(公告)日：2016-12-01

申请号：US15130379

申请日：2016-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Hwan PARK ,  Sam Mook KANG ,  Jun Youn KIM ,  Mi Hyun KIM ,  Joo Sung KIM ,  Young Jo TAK

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/12

CPC classification number: H01L33/007 ,  F21K9/237 ,  F21K9/275 ,  F21S41/141 ,  F21S43/14 ,  F21V23/005 ,  F21Y2113/10 ,  F21Y2115/10 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02658 ,  H01L33/12 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer layer, the plurality of openings penetrating through the buffer layer and being spaced apart from one another; forming a plurality of cavities on the growth substrate, the plurality of cavities being aligned to respectively correspond to the plurality of openings; growing a semiconductor layer on the buffer layer, the growing the semiconductor layer including filling the plurality of openings with the semiconductor layer; and separating the buffer layer and the semiconductor layer from the growth substrate, wherein a diameter of each of the plurality of openings at a boundary between the growth substrate and the buffer layer is smaller than a diameter of each of the plurality of cavities at the boundary.

Abstract translation: 制造半导体衬底的方法可以包括：在生长衬底上形成缓冲层; 在所述缓冲层中形成多个开口，所述多个开口穿过所述缓冲层并彼此间隔开; 在所述生长衬底上形成多个空腔，所述多个空腔对准分别对应于所述多个开口; 在缓冲层上生长半导体层，生长半导体层，包括用半导体层填充多个开口; 以及从所述生长衬底分离所述缓冲层和所述半导体层，其中在所述生长衬底和所述缓冲层之间的边界处的所述多个开口中的每一个的直径小于所述边界处的所述多个空腔中的每一个的直径 。

公开(公告)号：US20180174823A1

公开(公告)日：2018-06-21

申请号：US15662425

申请日：2017-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mi Hyun KIM ,  Sam Mook KANG ,  Jun Youn KIM ,  Young Jo TAK

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  B08B3/024 ,  B08B3/12 ,  C30B25/02 ,  C30B25/04 ,  C30B25/183 ,  C30B25/186 ,  C30B29/406 ,  H01L21/02027 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/02096 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02247 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02307 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/7806

Abstract: A method of manufacturing a gallium nitride substrate, the method including forming a first buffer layer on a silicon substrate such that the first buffer layer has one or more holes therein; forming a second buffer layer on the first buffer layer such that the second buffer layer has one or more holes therein; and forming a GaN layer on the second buffer layer, wherein the one or more holes of the first buffer layer are filled by the second buffer layer.

公开(公告)号：US20150155432A1

公开(公告)日：2015-06-04

申请号：US14455853

申请日：2014-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geon Wook YOO ,  Jae Hyeok HEO ,  Sam Mook KANG ,  Han Kyu SEONG

IPC: H01L33/04 ,  H01L33/64 ,  H01L33/08

CPC classification number: H01L33/04 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/64

Abstract: A nanostructure semiconductor light emitting device may include a substrate including a plurality of light emitting nanostructures comprising nanocores including a first conductivity type semiconductor, active layers and second conductivity type semiconductor layers sequentially formed on the nanocores. The light emitting region may include a first region and a second region. The interval between the light emitting nanostructures disposed in the first region may be different than the interval between the light emitting nanostructures disposed in the second region. The first region may be closer to a non-light emitting region than the second region and may have a smaller interval between the light emitting nanostructures than that of the second region. Systems implementing such a nanostructure semiconductor light emitting device and methods of manufacture are also disclosed.

Abstract translation: 纳米结构半导体发光器件可以包括包括多个发光纳米结构的衬底，其包括依次形成在纳米孔上的包括第一导电类型半导体，有源层和第二导电类型半导体层的纳米孔。 发光区域可以包括第一区域和第二区域。 设置在第一区域中的发光纳米结构之间的间隔可以不同于设置在第二区域中的发光纳米结构之间的间隔。 第一区域可以比第二区域更靠近非发光区域，并且可以在发光纳米结构之间具有比第二区域更小的间隔。 还公开了实施这种纳米结构半导体发光器件的系统和制造方法。

公开(公告)号：US20190189848A1

公开(公告)日：2019-06-20

申请号：US16038368

申请日：2018-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Jo TAK ,  Sam Mook KANG ,  Mi Hyun KIM ,  Joo Sung KIM ,  Young Hwan PARK ,  Jong Uk SEO

IPC: H01L33/32 ,  H01L33/12 ,  H01L33/10 ,  H01L33/20 ,  H01L33/40 ,  H01L33/04

Abstract: A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.

公开(公告)号：US20160118533A1

公开(公告)日：2016-04-28

申请号：US14887466

申请日：2015-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： MISAICHI TAKEUCHI ,  Sam Mook KANG ,  Shigeru INOUE ,  Ki Se KIM

IPC: H01L33/00 ,  H01L33/24 ,  H01L33/06

CPC classification number: H01L33/005 ,  H01L33/007 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24

Abstract: A method of manufacturing a nanostructure semiconductor light emitting device may include: stacking a mask layer on a conductive base layer and forming a through hole penetrating the mask layer; growing a nanocore through the through hole from the conductive base layer using precursor gas including indium-containing precursor gas in a mixed gas atmosphere of nitrogen and hydrogen; removing the mask layer; and sequentially growing an active layer and a first conductivity type semiconductor layer on a surface of the nanocore.

Abstract translation: 制造纳米结构半导体发光器件的方法可以包括：在导电基底层上堆叠掩模层并形成穿透掩模层的通孔; 在氮和氢的混合气体气氛中，使用包括含铟前体气体的前体气体，从导电性基底层通过通孔生长纳米孔; 去除掩模层; 并在纳米孔的表面上依次生长有源层和第一导电型半导体层。

公开(公告)号：US20150194571A1

公开(公告)日：2015-07-09

申请号：US14454536

申请日：2014-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Sub LEE ,  Jung Sub KIM ,  Sam Mook KANG ,  Yeon Woo SEO ,  Han Kyu SEONG ,  Dae Myung CHUN ,  Young Jin CHOI ,  Jae Hyeok HEO

IPC: H01L33/14 ,  H01L33/24 ,  H01L33/18 ,  H01L33/02 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L33/145 ,  H01L33/002 ,  H01L33/025 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/486 ,  H01L33/52 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

Abstract translation: 提供一种半导体发光器件，其包括第一导电型半导体基底层和多个发光纳米结构，所述多个发光纳米结构在第一导电型半导体基底层上彼此间隔开，每个发光纳米结构包括第一导电性 型半导体芯，有源层，电荷阻挡层和第二导电型半导体层，其中第一导电型半导体芯在晶体学方向上具有不同的第一和第二晶体面。

公开(公告)号：US20140206116A1

公开(公告)日：2014-07-24

申请号：US14153442

申请日：2014-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Wook HWANG ,  Sam Mook KANG ,  Han Kyu SEONG

IPC: H01L33/00

CPC classification number: H01L33/005 ,  H01L33/24

Abstract: There are provided a semiconductor light emitting device and a method of manufacturing the same. A method of manufacturing a plurality of light emitting nanostructures of a semiconductor light emitting device includes: forming a plurality of first conductivity type semiconductor cores on a first type semiconductor seed layer, each first conductivity type semiconductor core formed through an opening in an insulating film; forming an active layer on each first conductivity type semiconductor core; forming, using a mask pattern, a second conductivity type semiconductor layer on each active layer to cover the active layer, to form a plurality of light emitting nanostructures; and forming an electrode on the plurality of light emitting nanostructures.

Abstract translation: 提供了一种半导体发光器件及其制造方法。 一种制造半导体发光器件的多个发光纳米结构的方法，包括：在第一种类的半导体晶种层上形成多个第一导电型半导体芯，每个第一导电型半导体芯通过绝缘膜上的开口形成; 在每个第一导电型半导体芯上形成有源层; 在每个有源层上形成使用掩模图形的第二导电类型半导体层以覆盖有源层，以形成多个发光纳米结构; 以及在所述多个发光纳米结构上形成电极。

公开(公告)号：US20190189877A1

公开(公告)日：2019-06-20

申请号：US16018542

申请日：2018-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mi Hyun KIM ,  Young Hwan PARK ,  Sam Mook KANG ,  Joo Sung KIM ,  Jong Uk SEO ,  Young Jo TAK

IPC: H01L33/62 ,  H01L33/40 ,  H01L33/38 ,  H01L33/64

Abstract: A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.

公开(公告)号：US20170358443A1

公开(公告)日：2017-12-14

申请号：US15399898

申请日：2017-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Jo TAK ,  Sam Mook KANG ,  Mi Hyun KIM ,  Jun Youn KIM ,  Young Soo PARK

IPC: H01L21/02 ,  H01L21/304 ,  H01L21/306

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/304 ,  H01L21/30604

Abstract: A method of manufacturing a nitride semiconductor substrate includes providing a silicon substrate having a first surface and a second surface opposing each other, growing a nitride template on the first surface of the silicon substrate in a first growth chamber, in which a silicon compound layer is formed on the second surface of the silicon substrate in a growth process of the nitride template, removing the silicon compound layer from the second surface of the silicon substrate, growing a group III nitride single crystal on the nitride template in a second growth chamber, and removing the silicon substrate from the second growth chamber.