公开(公告)号：US20160118533A1

公开(公告)日：2016-04-28

申请号：US14887466

申请日：2015-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： MISAICHI TAKEUCHI ,  Sam Mook KANG ,  Shigeru INOUE ,  Ki Se KIM

IPC: H01L33/00 ,  H01L33/24 ,  H01L33/06

CPC classification number: H01L33/005 ,  H01L33/007 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24

Abstract: A method of manufacturing a nanostructure semiconductor light emitting device may include: stacking a mask layer on a conductive base layer and forming a through hole penetrating the mask layer; growing a nanocore through the through hole from the conductive base layer using precursor gas including indium-containing precursor gas in a mixed gas atmosphere of nitrogen and hydrogen; removing the mask layer; and sequentially growing an active layer and a first conductivity type semiconductor layer on a surface of the nanocore.

Abstract translation: 制造纳米结构半导体发光器件的方法可以包括：在导电基底层上堆叠掩模层并形成穿透掩模层的通孔; 在氮和氢的混合气体气氛中，使用包括含铟前体气体的前体气体，从导电性基底层通过通孔生长纳米孔; 去除掩模层; 并在纳米孔的表面上依次生长有源层和第一导电型半导体层。

公开(公告)号：US20130200387A1

公开(公告)日：2013-08-08

申请号：US13757933

申请日：2013-02-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hoon LEE ,  Ki Se KIM

IPC: H01L29/20 ,  H01L29/66

CPC classification number: H01L29/2003 ,  H01L29/0619 ,  H01L29/155 ,  H01L29/201 ,  H01L29/4236 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/872

Abstract: A nitride based heterojunction semiconductor device includes a GaN layer on a substrate, an Al-doped GaN layer on the GaN layer, an AlGaN layer on the Al-doped GaN layer, a source electrode, a gate electrode, and a drain electrode on the AlGaN layer, a first field plate on the AlGaN layer, the first field plate being in contact with the gate electrode, and a second field plate on the AlGaN layer, the second field plate being separated from the first field plate by a distance.

Abstract translation: 氮化物基异质结半导体器件包括衬底上的GaN层，GaN层上的Al掺杂GaN层，Al掺杂GaN层上的AlGaN层，源电极，栅极电极和漏极电极 AlGaN层，AlGaN层上的第一场板，第一场板与栅电极接触，第二场板在AlGaN层上，第二场板与第一场板分离一段距离。

公开(公告)号：US20130168873A1

公开(公告)日：2013-07-04

申请号：US13729218

申请日：2012-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heon Bok LEE ,  Ki Se KIM

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/76897 ,  H01L23/4824 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A power semiconductor device and a manufacturing method thereof, the power semiconductor device including a plurality of first electrodes and a plurality of second electrodes, a plurality of first via electrodes on a first insulating layer and contacting the plurality of first electrodes, a plurality of second via electrodes on the first insulating layer and contacting the plurality of second electrodes, a first electrode pad contacting the plurality of first via electrodes, a second electrode pad contacting the plurality of second via electrodes, a plurality of third via electrodes on a second insulating layer and contacting the first electrode pad, a plurality of fourth via electrodes on the second insulating layer and contacting the second electrode pad, a third electrode pad contacting the plurality of third via electrodes, and a fourth electrode pad contacting the plurality of fourth via electrodes.

Abstract translation: 一种功率半导体器件及其制造方法，所述功率半导体器件包括多个第一电极和多个第二电极，多个第一通孔电极在第一绝缘层上并与所述多个第一电极接触，多个第二电极 通过所述第一绝缘层上的电极并接触所述多个第二电极，接触所述多个第一通孔电极的第一电极焊盘，与所述多个第二通孔电极接触的第二电极焊盘，在第二绝缘层上的多个第三通孔电极 以及使所述第一电极焊盘，所述第二绝缘层上的多个第四通孔电极和所述第二电极焊盘接触，与所述多个第三通孔电极接触的第三电极焊盘以及与所述多个第四通孔电极接触的第四电极焊盘。

公开(公告)号：US20130168698A1

公开(公告)日：2013-07-04

申请号：US13716640

申请日：2012-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hoon LEE ,  Ki Se KIM

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/78 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66477 ,  H01L29/872

Abstract: A power device includes a substrate, a silicon carbide (SixC1-x) layer on one surface of the substrate, wherein 0

Abstract translation: 功率器件包括衬底，在衬底的一个表面上的碳化硅（SixC1-x）层，其中0

公开(公告)号：US20130168688A1

公开(公告)日：2013-07-04

申请号：US13728157

申请日：2012-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hoon LEE ,  Ki Se KIM

IPC: H01L29/20 ,  H01L21/02

CPC classification number: H01L29/2003 ,  H01L21/02107 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/0649 ,  H01L29/66212 ,  H01L29/872

Abstract: A nitride based semiconductor device includes a first metallic junction layer, a Schottky junction layer on the first metallic junction layer, a first group III nitride semiconductor layer on the Schottky junction layer, a first insulating pattern layer on the first group III nitride semiconductor layer, the first insulating layer pattern including curved protrusions, a second group III nitride semiconductor layer laterally grown on the first group III nitride semiconductor layer, a first type group III nitride semiconductor layer on the second group III nitride semiconductor layer, the first type group III nitride semiconductor layer being simultaneously doped with aluminum (Al) and silicon (Si), an ohmic junction layer formed on the first type group III nitride semiconductor layer, a second metallic junction layer on the ohmic junction layer, and a metallic supporting substrate on the second metallic junction layer.

Abstract translation: 氮化物基半导体器件包括第一金属结层，第一金属结层上的肖特基结层，肖特基结层上的第一III族氮化物半导体层，第一III族氮化物半导体层上的第一绝缘图案层， 第一绝缘层图案包括弯曲突起，在第一III族氮化物半导体层上横向生长的第二III族氮化物半导体层，第二III族氮化物半导体层上的第一类型III族氮化物半导体层，第一类型III族氮化物 半导体层同时掺杂有铝（Al）和硅（Si），形成在第一类型III族氮化物半导体层上的欧姆结层，欧姆结层上的第二金属结层和第二金属支撑衬底 金属结层。