公开(公告)号：US09552896B2

公开(公告)日：2017-01-24

申请号：US14619429

申请日：2015-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin-Ho Oh

IPC: G11C29/00 ,  G11C29/52 ,  G06F11/10 ,  G11C11/56 ,  G11C29/04

CPC classification number: G11C29/52 ,  G06F11/102 ,  G06F11/1048 ,  G06F11/1072 ,  G11C11/5642 ,  G11C2029/0411

Abstract: Provided are a nonvolatile memory and a data reading method of reading data from a nonvolatile memory by the memory controller. The data reading method includes reading data from memory cells of the nonvolatile memory, storing the read data in the internal memory, overwriting some of the read data stored in the internal memory with backup data, performing an error correction operation using the backup data stored in the internal memory, and overwriting the backup data stored in the internal memory with data corrected by the error correction operation.

Abstract translation: 提供了一种由存储器控制器从非易失性存储器读取数据的非易失性存储器和数据读取方法。 数据读取方法包括从非易失性存储器的存储器单元读取数据，将读取的数据存储在内部存储器中，用备份数据覆盖存储在内部存储器中的一些读取数据，使用存储在存储器中的备份数据执行纠错操作 内部存储器，并且通过纠错操作校正的数据覆盖存储在内部存储器中的备份数据。

公开(公告)号：US11610631B2

公开(公告)日：2023-03-21

申请号：US17316463

申请日：2021-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin-Ho Oh ,  Min-Cheol Kwon ,  Sang-Kwon Moon ,  Sang-Won Jung

IPC: G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/08 ,  G06F3/06

Abstract: A nonvolatile memory device includes multi-level cells in a memory cell array including a plurality of memory blocks, and each of the memory blocks includes a plurality of pages. A method of operating the nonvolatile memory device includes pre-programming multi-bit data in a pre-program block of the memory blocks, dividing the multi-level cells into a plurality of state groups based on state codes indicating states of the multi-level cells to generate digest data indicating state group codes corresponding to the state groups, and programming the digest data in a digest block of the memory blocks.

公开(公告)号：US10340947B2

公开(公告)日：2019-07-02

申请号：US15494507

申请日：2017-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin-Ho Oh ,  Woo-Hyun Kang ,  Min-Kyu Kim

IPC: G11C16/26 ,  G11C29/52 ,  H03M13/00 ,  H03M13/05 ,  G11C29/00

Abstract: In a method of controlling reclaim of a nonvolatile memory device including a plurality of memory blocks, wherein each of the memory blocks includes a plurality of pages, a recovery read operation is performed on first data using an optimal read voltage determined based on the first data, when the first data includes errors which are not correctable, wherein the first data is read from a first page of a first memory block of the memory blocks, and, when the errors of the first data are corrected after the recovery read operation is performed, whether to perform a reclaim of the first page is determined based on threshold voltage distributions of memory cells of the first page, wherein the memory cells are disposed in a region of interest adjacent to the optimal read voltage.

公开(公告)号：US11037628B2

公开(公告)日：2021-06-15

申请号：US16543532

申请日：2019-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin-Ho Oh ,  Min-Cheol Kwon ,  Sang-Kwon Moon ,  Sang-Won Jung

IPC: G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/08 ,  G06F3/06

Abstract: A nonvolatile memory device includes multi-level cells in a memory cell array including a plurality of memory blocks, and each of the memory blocks includes a plurality of pages. A method of operating the nonvolatile memory device includes pre-programming multi-bit data in a pre-program block of the memory blocks, dividing the multi-level cells into a plurality of state groups based on state codes indicating states of the multi-level cells to generate digest data indicating state group codes corresponding to the state groups, and programming the digest data in a digest block of the memory blocks.

公开(公告)号：US09208028B2

公开(公告)日：2015-12-08

申请号：US13935600

申请日：2013-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin-Ho Oh ,  Hee-Tai Oh

IPC: G06F11/00 ,  G06F11/14 ,  G06F11/07

CPC classification number: G06F11/1415 ,  G06F11/0727 ,  G06F11/1402 ,  G06F11/141

Abstract: A method managing execution of recovery code in a memory system includes; upon detecting a read error using a CPU and firmware to execute recovery code defining a read recovery operation including a read retry operation, during execution of the recovery code, generating a read request directed to the read retry operation, and immediately thereafter terminating execution of the recovery code, and thereafter, only upon receiving an asynchronous interrupt from the memory controller following completion of the read retry operation, the CPU resumes execution of the recovery code by the firmware, otherwise the CPU performs another task unrelated to execution of the recovery code.

Abstract translation: 管理存储系统中的恢复码的执行的方法包括： 在使用CPU和固件检测到读取错误以执行定义包括读取重试操作的读取恢复操作的恢复代码时，在执行恢复代码期间，生成针对读取重试操作的读取请求，并且立即终止执行 恢复码，此后，只有在读取重试操作完成之后才从存储器控制器接收到异步中断，CPU才恢复固件执行恢复代码，否则CPU执行与执行恢复代码无关的另一个任务。