公开(公告)号：US20240279808A1

公开(公告)日：2024-08-22

申请号：US18419021

申请日：2024-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsoo PARK ,  Songyi BAEK ,  Hyungwoo CHOI

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52

CPC classification number: C23C16/45561 ,  C23C16/4405 ,  C23C16/448 ,  C23C16/52

Abstract: A gas supply system includes a manifold for supplying gases for processing the substrate to a process chamber; a cleaning gas supply line supplying a cleaning gas to the manifold; a first inert gas supply line supplying a first inert gas to the cleaning gas supply line; a first opening/closing valve opening and closing the cleaning gas supply line; a reaction gas supply line supplying a reaction gas to the manifold; a source gas supply line provided with a vaporizer and supplying the source gas to the manifold; a second inert gas supply line supplying a second inert gas to the manifold and branching out to a carrier gas supply line connected to the vaporizer and a curtain gas supply line bypassing the vaporizer; a second opening/closing valve selectively opening or closing the carrier gas supply line and the curtain gas supply line; and a controller.

公开(公告)号：US20230175124A1

公开(公告)日：2023-06-08

申请号：US17878622

申请日：2022-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Songyi BAEK ,  Youngtack SIM ,  Jiwon KWAK ,  Sejin KYUNG ,  Daewee KONG ,  Taemin KIM

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/02

CPC classification number: C23C16/4405 ,  C23C16/45546 ,  H01L21/0217

Abstract: A substrate processing system includes: a process chamber that performs a semiconductor process on a substrate; a first oxygen supply unit; a first chamber that receives a gas containing oxygen (O2) from the first oxygen supply unit, receives exhaust gases discharged from the process chamber, and oxidizes the exhaust gas using the oxygen supplied from the first oxygen supply unit; a second chamber connected to the first chamber, and that receives a first treatment gas from the first chamber and bums the first treatment gas; a third chamber connected to the second chamber, and that receives a second treatment gas from the second chamber and performs a wetting treatment of the second treatment gas; and a tank disposed below the first to third chambers and connected to each of the first to third chambers.

公开(公告)号：US20220344166A1

公开(公告)日：2022-10-27

申请号：US17522193

申请日：2021-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanyeol PARK ,  Jongyoung PARK ,  Yongdeok LEE ,  Sejin KYUNG ,  Daewee KONG ,  Ilwoo KIM ,  Songyi BAEK ,  Philippe COCHE

IPC: H01L21/308 ,  H01L21/02 ,  H01L49/02 ,  H01L21/768

Abstract: Provided is a semiconductor device. The semiconductor device includes a wafer; an etch stop layer on the wafer; a lower mold layer on the etch stop layer; an intermediate supporter layer on the lower mold layer; an upper mold layer on the intermediate supporter layer; an upper supporter layer on the upper mold layer; and a hard mask structure on the upper supporter layer, wherein the hard mask structure includes a first hard mask layer on the upper supporter layer and a second hard mask layer on the first hard mask layer, one of the first hard mask layer and the second hard mask layer includes a first organic layer including a SOH containing C, H, O, and N, and the other one of the first hard mask layer and the second hard mask layer includes a second organic layer including an SOH containing C, H, and O.