WASHING CONTROL METHOD OF A WASHING MACHINE TO PERFORM WASHING USING BUBBLES
    3.
    发明申请
    WASHING CONTROL METHOD OF A WASHING MACHINE TO PERFORM WASHING USING BUBBLES 审中-公开
    洗衣机洗衣机的洗涤控制方法使用泡沫进行洗涤

    公开(公告)号:US20130291316A1

    公开(公告)日:2013-11-07

    申请号:US13936565

    申请日:2013-07-08

    Abstract: A washing control method that is capable of controlling laundry to be effectively washed with bubbles depending upon load of a washing machine. The washing control method includes supplying wash water containing detergent into a space between a lower portion of a rotary drum and a lower inner surface of a water tub; heating the wash water containing detergent; generating and supplying bubbles into the rotary drum; and washing laundry with the supplied bubbles.

    Abstract translation: 一种洗涤控制方法,其能够根据洗衣机的负荷来控制衣物有效地被气泡洗涤。 洗涤控制方法包括将洗涤水供应到旋转鼓的下部和水桶的下内表面之间的空间中; 加热含洗涤剂的洗涤水; 产生和提供气泡到旋转鼓中; 并用所提供的气泡洗衣服。

    Electronic device comprising a battery

    公开(公告)号:US11251641B2

    公开(公告)日:2022-02-15

    申请号:US16170276

    申请日:2018-10-25

    Abstract: An electronic device is provided. The electronic device includes a battery having a rated charging voltage, a rated charging current, and a design capacity, a charging circuit configured to supply power to the battery, and a processor electrically connected to the battery and the charging circuit. The processor is configured to control the charging circuit to charge the battery in different ways based on a plurality of ranges determined based on a full charge capacity (FCC) of the battery, and, when the FCC of the battery is included in a first range from the design capacity to a first capacity lower than the design capacity, control the charging circuit to charge the battery by setting a first voltage lower than the rated charging voltage and setting a first current lower than the rated charging current.

    MEMORY DEVICE INCLUDING PROGRAMMABLE ANTIFUSE MEMORY CELL ARRAY
    5.
    发明申请
    MEMORY DEVICE INCLUDING PROGRAMMABLE ANTIFUSE MEMORY CELL ARRAY 审中-公开
    存储器件,包括可编程抗体存储器单元阵列

    公开(公告)号:US20130322150A1

    公开(公告)日:2013-12-05

    申请号:US13803336

    申请日:2013-03-14

    Abstract: A memory device includes a memory cell array, a column decoder, and a row decoder. The memory cell array includes a plurality of antifuse memory cells arranged in rows and columns, each of the antifuse memory cells connected to one of a plurality of word lines, one of a plurality of high-voltage lines, and one of a plurality of bit lines. The column decoder is arranged at a first side of the memory cell array and configured to select one bit line among the bit lines. The row decoder is arranged parallel to the column decoder in a first direction, and configured to select one word line among the word lines.

    Abstract translation: 存储器件包括存储单元阵列,列解码器和行解码器。 存储单元阵列包括排列成行和列的多个反熔丝存储单元,每个反熔丝存储单元连接到多个字线中的一个,多个高压线之一和多个位中的一个 线条。 列解码器被布置在存储单元阵列的第一侧,并且被配置为在位线中选择一个位线。 行解码器在第一方向上平行于列解码器布置,并且被配置为在字线中选择一个字线。

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