公开(公告)号：US11804490B2

公开(公告)日：2023-10-31

申请号：US17533212

申请日：2021-11-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joong Gun Oh ,  Sung Il Park ,  Jae Hyun Park ,  Hyung Suk Lee ,  Eun Sil Park ,  Yun Il Lee

IPC: H01L27/092 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L21/308 ,  H01L29/423 ,  H01L21/768

CPC classification number: H01L27/0924 ,  H01L21/3086 ,  H01L21/76895 ,  H01L21/823821 ,  H01L21/823871 ,  H01L21/823878 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/42356 ,  H01L29/6656 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

公开(公告)号：US11195833B2

公开(公告)日：2021-12-07

申请号：US16218796

申请日：2018-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joong Gun Oh ,  Sung Il Park ,  Jae Hyun Park ,  Hyung Suk Lee ,  Eun Sil Park ,  Yun Il Lee

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L21/308 ,  H01L29/423 ,  H01L21/768

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

公开(公告)号：US10727354B2

公开(公告)日：2020-07-28

申请号：US15944175

申请日：2018-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Il Park ,  Jung Gun You ,  Dong Hun Lee ,  Yun Il Lee

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/06 ,  H01L29/66 ,  H01L29/49 ,  H01L29/423 ,  H01L29/08

Abstract: A semiconductor device includes a substrate; a vertical channel structure including a pair of active fins extended in a first direction, perpendicular to an upper surface of the substrate, and an insulating portion interposed between the pair of active fins; an upper source/drain disposed on the vertical channel structure; a lower source/drain disposed below the vertical channel structure and on the substrate; a gate electrode disposed between the upper source/drain and the lower source/drain and surrounding the vertical channel structure; and a gate dielectric layer disposed between the gate electrode and the vertical channel structure. An interval between the gate electrode and the upper source/drain may be smaller than an interval between the gate electrode and the lower source/drain in the first direction.

公开(公告)号：US20240055432A1

公开(公告)日：2024-02-15

申请号：US18477290

申请日：2023-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joong Gun Oh ,  Sung Il Park ,  Jae Hyun Park ,  Hyung Suk Lee ,  Eun Sil Park ,  Yun Il Lee

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L21/8238 ,  H01L21/308 ,  H01L29/423 ,  H01L21/768

CPC classification number: H01L27/0924 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/0642 ,  H01L29/6656 ,  H01L29/0847 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/823871 ,  H01L21/3086 ,  H01L29/42356 ,  H01L21/76895

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

公开(公告)号：US12279458B2

公开(公告)日：2025-04-15

申请号：US18477290

申请日：2023-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joong Gun Oh ,  Sung Il Park ,  Jae Hyun Park ,  Hyung Suk Lee ,  Eun Sil Park ,  Yun Il Lee

IPC: H01L27/092 ,  H01L21/308 ,  H01L21/768 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H10D30/01 ,  H10D30/62 ,  H10D62/10 ,  H10D62/13 ,  H10D64/01 ,  H10D64/27 ,  H10D84/01 ,  H10D84/03 ,  H10D84/85 ,  H01L21/8238

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

公开(公告)号：US20220415931A1

公开(公告)日：2022-12-29

申请号：US17693883

申请日：2022-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Il Park ,  Jae Hyun Park ,  Do Young Choi ,  Yoshinao Harada ,  Dae Won Ha

IPC: H01L27/12 ,  H01L21/822

Abstract: A semiconductor device comprises a substrate, a first active pattern on the substrate and extending in a first direction, a second active pattern extending in the first direction spaced apart from the substrate, a gate electrode extending in a second direction surrounding the first and second active patterns, and a high dielectric film between the first and second active patterns and the gate electrode. The gate electrode includes first and second work function adjusting films surrounding the high dielectric film on the first and second active patterns, and a filling conductive film surrounding the first and second work function adjusting films. The first and second work function adjusting films include first and second work function conductive films, each of which includes a first metal film. A thickness of the first metal film of the first work function conductive film is greater than that of the second work function conductive film.

公开(公告)号：US20220415906A1

公开(公告)日：2022-12-29

申请号：US17577120

申请日：2022-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Il Park ,  Jae Hyun Park ,  Min Gyu Kim ,  Do Young Choi ,  Dae Won Ha

IPC: H01L27/11 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor memory device and a method for manufacturing the same. The semiconductor memory device may include a substrate, a first lower wire pattern and a first upper wire pattern stacked on the substrate, and spaced apart from each other; a second lower wire pattern and a second upper wire pattern stacked on the substrate, spaced apart from each other, and spaced apart from the first lower and upper wire patterns; a first gate line surrounding the first lower wire pattern and the first upper wire pattern; a second gate line surrounding the second lower wire pattern and the second upper wire pattern and spaced apart from the first gate line; a first lower source/drain area; a first upper source/drain area; and a first overlapping contact that electrically connects the first lower source/drain area, the first upper source/drain area and the second gate line to each other.

公开(公告)号：US09207011B2

公开(公告)日：2015-12-08

申请号：US14256284

申请日：2014-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Young Song ,  Yong Kyung Kim ,  Sung Il Park ,  Jin ha Hwang

IPC: A47B96/04 ,  F25D23/06 ,  F25D25/02 ,  F25D23/02

CPC classification number: F25D23/069 ,  F25D23/021 ,  F25D25/022 ,  F25D25/025

Abstract: A food container allowing the inner space of the food container to be appropriately divided with a minimum number of components and a refrigerator having the same. The food container includes a case defining an accommodation space therein, an inner surface of the case being provided with a stepped portion, a divider assembly to partition the accommodation space as desired, the divider assembly having one side slidably seated on the stepped portion.

Abstract translation: 食品容器允许食物容器的内部空间与最少数量的部件适当地分开，并且具有该容器的冰箱。 食品容器包括在其中限定容纳空间的壳体，壳体的内表面设置有阶梯部分，分隔器组件根据需要分隔容纳空间，分隔器组件具有可滑动地安置在阶梯部分上的一侧。