公开(公告)号：US20150325683A1

公开(公告)日：2015-11-12

申请号：US14612797

申请日：2015-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun-Hwi Cho ,  Dong-Won Kim ,  Yoshinao Harada ,  Myung-Gil Kang ,  Jae-Young Park

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/324

CPC classification number: H01L29/66803 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66795

Abstract: In a method of manufacturing a semiconductor device, a plasma annealing and supplying a threshold voltage control gas onto a portion of a substrate is performed to form a fixed charge region including a fixed charge at a surface of the substrate. A MOS transistor is formed on the substrate including the fixed charge region. By the above processes, the threshold voltage of the MOS transistor may be easily controlled.

Abstract translation: 在制造半导体器件的方法中，执行等离子体退火并将阈值电压控制气体供应到衬底的一部分上，以在衬底的表面上形成包括固定电荷的固定电荷区域。 在包括固定电荷区的基板上形成MOS晶体管。 通过上述处理，可以容易地控制MOS晶体管的阈值电压。

公开(公告)号：US20240096956A1

公开(公告)日：2024-03-21

申请号：US18370663

申请日：2023-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjoo Na ,  Woobin Song ,  Jinwook Yang ,  Cheoljin Yun ,  Dongkyu Lee ,  Yoshinao Harada

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/0673 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/4933 ,  H01L29/66553

Abstract: An integrated circuit semiconductor device includes a nanosheet extending above a substrate in a first horizontal direction, a gate electrode extending in a second horizontal direction while surrounding the nanosheet with a gate insulating layer therebetween, a first source/drain region on a side of the nanosheet, and a second source/drain region on another side of the nanosheet, wherein the first source/drain region includes first silicide layers provided inward from surfaces of the nanosheet, first metal layers surrounding the nanosheet from upper and lower sides of the first silicide layers, and a first nanosheet region provided between the first silicide layers, wherein the second source/drain region includes second silicide layers formed inward from the surfaces of the nanosheet, second metal layers surrounding the nanosheet from upper and lower sides of the second silicide layers, and a second nanosheet region provided between the second silicide layers.

公开(公告)号：US09577076B2

公开(公告)日：2017-02-21

申请号：US14612797

申请日：2015-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun-Hwi Cho ,  Dong-Won Kim ,  Yoshinao Harada ,  Myung-Gil Kang ,  Jae-Young Park

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/324 ,  H01L21/8238 ,  H01L21/84

CPC classification number: H01L29/66803 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66795

Abstract: In a method of manufacturing a semiconductor device, a plasma annealing and supplying a threshold voltage control gas onto a portion of a substrate is performed to form a fixed charge region including a fixed charge at a surface of the substrate. A MOS transistor is formed on the substrate including the fixed charge region. By the above processes, the threshold voltage of the MOS transistor may be easily controlled.

Abstract translation: 在制造半导体器件的方法中，执行等离子体退火并将阈值电压控制气体供应到衬底的一部分上，以在衬底的表面上形成包括固定电荷的固定电荷区域。 在包括固定电荷区的基板上形成MOS晶体管。 通过上述处理，可以容易地控制MOS晶体管的阈值电压。

公开(公告)号：US20220415931A1

公开(公告)日：2022-12-29

申请号：US17693883

申请日：2022-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Il Park ,  Jae Hyun Park ,  Do Young Choi ,  Yoshinao Harada ,  Dae Won Ha

IPC: H01L27/12 ,  H01L21/822

Abstract: A semiconductor device comprises a substrate, a first active pattern on the substrate and extending in a first direction, a second active pattern extending in the first direction spaced apart from the substrate, a gate electrode extending in a second direction surrounding the first and second active patterns, and a high dielectric film between the first and second active patterns and the gate electrode. The gate electrode includes first and second work function adjusting films surrounding the high dielectric film on the first and second active patterns, and a filling conductive film surrounding the first and second work function adjusting films. The first and second work function adjusting films include first and second work function conductive films, each of which includes a first metal film. A thickness of the first metal film of the first work function conductive film is greater than that of the second work function conductive film.