公开(公告)号：US10802708B2

公开(公告)日：2020-10-13

申请号：US15054796

申请日：2016-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Yeon Lee ,  Yonghak Kim ,  Yunju Bae ,  Kanghyun Suh ,  Jin-Gil Yang ,  Youngseok Lim ,  Lai Kun Jung ,  Hyeoncheon Jo ,  Inji Jin ,  Dahey Yoo

IPC: G06F3/0488 ,  H04M1/27475 ,  H04N21/4788 ,  H04M1/725 ,  H04L12/58

Abstract: An electronic device and a method are provided. The electronic device includes a communication module, a touch screen display, a processor electrically connected with the communication module and the touch screen display, and a memory electrically connected with the processor. The memory is configured to stores an application program configured to transmit and receive data to/from an external electronic device using the communication module, and instructions to enable the processor to display a user interface of the application program in the touch screen display when the application program is executed. The user interface includes a first area that displays at least one of an image and text that is associated with a user who is related to the external electronic device, and a second area that displays data that is shared with the external electronic device, and the first area overlaps at least a part of the second area.

公开(公告)号：US10860117B2

公开(公告)日：2020-12-08

申请号：US16468193

申请日：2017-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongjin Cho ,  Ki-Hwan Kim ,  Jongyoon Kim ,  Moonki Yeo ,  Daekyu Lee ,  Sung Yeon Lee ,  Yong Sang Yun

IPC: G06F3/0346 ,  G06F3/01 ,  G06F3/038 ,  G06F3/0481

Abstract: The present invention is for controlling an input dimension in an electronic device, and an operation method of the electronic device includes: an operation for measuring the distance between the electronic device and the ground; and operation for transmitting, to another electronic device, first information about two-dimensional coordinates representing the position of the electronic device, when the distance is shorter than a threshold value; and an operation for transmitting, to the other electronic device, second information about three-dimensional coordinates representing the position of the electronic device, when the distance is not shorter than the threshold value.

公开(公告)号：US09196358B2

公开(公告)日：2015-11-24

申请号：US13963417

申请日：2013-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Yeon Lee ,  Yeong-Taek Lee

IPC: G11C13/00 ,  G11C11/16 ,  G11C11/56

CPC classification number: G11C13/004 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1693 ,  G11C11/5607 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0061 ,  G11C2213/71 ,  G11C2213/72

Abstract: The nonvolatile memory device using a variable resistance material and a method for driving the same are provided. A first clamping unit connected between a resistance memory cell and a first sensing node to provide a first clamping bias to the resistance memory cell. The first clamping bias changes over time. A first compensation unit provides a compensation current to the first sensing node. A first sense amplifier is connected to the first sensing node to sense a level change of the first sensing node. In response to if first data stored in the resistance memory cell, an output value of the first sense amplifier transitions to a different state after a first amount of time from a time point from where the first clamping bias starts. In response to second data that is different from the first data stored in the resistance memory cell, the output value of the first sense amplifier transitions to the different state after a second amount of time that is different from the first amount of time from the time point from where the first clamping bias starts.

Abstract translation: 提供了使用可变电阻材料的非易失性存储器件及其驱动方法。 连接在电阻存储单元和第一感测节点之间的第一钳位单元，用于向电阻存储单元提供第一钳位偏置。 第一个钳位偏置随时间而变化。 第一补偿单元向第一感测节点提供补偿电流。 第一读出放大器连接到第一感测节点以感测第一感测节点的电平变化。 响应于如果存储在电阻存储器单元中的第一数据，则第一读出放大器的输出值在从第一钳位偏置开始的时间点开始的第一时间量之后转变到不同的状态。 响应于与存储在电阻存储器单元中的第一数据不同的第二数据，第一读出放大器的输出值在从与时间不同的第一时间量的第二时间量之后转变到不同状态 从第一个夹紧偏置开始的点。

公开(公告)号：US20140119095A1

公开(公告)日：2014-05-01

申请号：US13963417

申请日：2013-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Yeon Lee ,  Yeong-Taek Lee

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1693 ,  G11C11/5607 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0061 ,  G11C2213/71 ,  G11C2213/72

Abstract: The nonvolatile memory device using a variable resistance material and a method for driving the same are provided. A first clamping unit connected between a resistance memory cell and a first sensing node to provide a first clamping bias to the resistance memory cell. The first clamping bias changes over time. A first compensation unit provides a compensation current to the first sensing node. A first sense amplifier is connected to the first sensing node to sense a level change of the first sensing node. In response to if first data stored in the resistance memory cell, an output value of the first sense amplifier transitions to a different state after a first amount of time from a time point from where the first clamping bias starts. In response to second data that is different from the first data stored in the resistance memory cell, the output value of the first sense amplifier transitions to the different state after a second amount of time that is different from the first amount of time from the time point from where the first clamping bias starts.

Abstract translation: 提供了使用可变电阻材料的非易失性存储器件及其驱动方法。 连接在电阻存储单元和第一感测节点之间的第一钳位单元，用于向电阻存储单元提供第一钳位偏置。 第一个钳位偏置随时间而变化。 第一补偿单元向第一感测节点提供补偿电流。 第一读出放大器连接到第一感测节点以感测第一感测节点的电平变化。 响应于如果存储在电阻存储器单元中的第一数据，则第一读出放大器的输出值在从第一钳位偏置开始的时间点开始的第一时间量之后转变到不同的状态。 响应于与存储在电阻存储器单元中的第一数据不同的第二数据，第一读出放大器的输出值在从与时间不同的第一时间量的第二时间量之后转变到不同状态 从第一个夹紧偏置开始的点。