公开(公告)号：US20130193408A1

公开(公告)日：2013-08-01

申请号：US13756241

申请日：2013-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Won Hwang ,  Geun-Woo Ko ,  Sung-Hyun Sim ,  Jung-Sub Kim ,  Hun-Jae Chung ,  Cheol-Soo Sone

IPC: H01L33/04

CPC classification number: H01L33/04 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y99/00 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L2933/0016 ,  Y10S977/734

Abstract: An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.

Abstract translation: 包括n型半导体层，设置在n型半导体层上的有源层，设置在有源层上并由p型AlGaN形成的p型半导体层的紫外线（UV）发光二极管，以及 p型石墨烯层设置在p型半导体层上并由掺杂有p型掺杂剂的石墨烯形成。 UV发光二极管通过降低与p型半导体层的接触电阻并使UV透射率最大化来提高发光效率。

公开(公告)号：US09012884B2

公开(公告)日：2015-04-21

申请号：US13828346

申请日：2013-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Sub Kim ,  Sung-Won Hwang ,  Geun-Woo Ko ,  Cheol-Soo Sone ,  Sung-Hyun Sim ,  Jin-Sub Lee

IPC: H01L33/40 ,  H01L33/30 ,  H01L33/14 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/145 ,  H01L33/305 ,  H01L33/32 ,  H01L33/40

Abstract: A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.

Abstract translation: 半导体发光器件包括接触层。 接触层具有逐渐变化的Al元素的组成比。 由半导体发光器件的接触层中的Al元素形成的区域可以提高从有源层发射的光的光提取效率，并且有助于形成反射电极。

公开(公告)号：US08907320B2

公开(公告)日：2014-12-09

申请号：US13756241

申请日：2013-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Won Hwang ,  Geun-Woo Ko ,  Sung-Hyun Sim ,  Jung-Sub Kim ,  Hun-Jae Chung ,  Cheol-Soo Sone

IPC: H01L31/00 ,  H01L33/14 ,  H01L33/04 ,  B82Y99/00 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/20

CPC classification number: H01L33/04 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y99/00 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L2933/0016 ,  Y10S977/734

Abstract: An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.

Abstract translation: 包括n型半导体层，设置在n型半导体层上的有源层，设置在有源层上并由p型AlGaN形成的p型半导体层的紫外线（UV）发光二极管，以及 p型石墨烯层设置在p型半导体层上并由掺杂有p型掺杂剂的石墨烯形成。 UV发光二极管通过降低与p型半导体层的接触电阻并使UV透射率最大化来提高发光效率。