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公开(公告)号：US09257605B2
公开(公告)日：2016-02-09
申请号：US14790047
申请日：2015-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yeon Woo Seo , Jung-Sub Kim , Young Jin Choi , Denis Sannikov , Han Kyu Seong , Dae Myung Chun , Jae Hyeok Heo
CPC classification number: H01L33/24 , F21K9/232 , F21S41/147 , F21S45/43 , F21S45/47 , F21Y2115/10 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
Abstract: A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.
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公开(公告)号：US20130193408A1
公开(公告)日：2013-08-01
申请号：US13756241
申请日：2013-01-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung-Won Hwang , Geun-Woo Ko , Sung-Hyun Sim , Jung-Sub Kim , Hun-Jae Chung , Cheol-Soo Sone
IPC: H01L33/04
CPC classification number: H01L33/04 , B82Y10/00 , B82Y20/00 , B82Y99/00 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/42 , H01L2933/0016 , Y10S977/734
Abstract: An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.
Abstract translation: 包括n型半导体层，设置在n型半导体层上的有源层，设置在有源层上并由p型AlGaN形成的p型半导体层的紫外线（UV）发光二极管，以及 p型石墨烯层设置在p型半导体层上并由掺杂有p型掺杂剂的石墨烯形成。 UV发光二极管通过降低与p型半导体层的接触电阻并使UV透射率最大化来提高发光效率。
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3.发明授权Semiconductor light-emitting devices including contact layers to form reflective electrodes 有权包括形成反射电极的接触层的半导体发光器件公开(公告)号：US09012884B2
公开(公告)日：2015-04-21
申请号：US13828346
申请日：2013-03-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung-Sub Kim , Sung-Won Hwang , Geun-Woo Ko , Cheol-Soo Sone , Sung-Hyun Sim , Jin-Sub Lee
CPC classification number: H01L33/405 , H01L33/0075 , H01L33/14 , H01L33/145 , H01L33/305 , H01L33/32 , H01L33/40
Abstract: A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.
Abstract translation: 半导体发光器件包括接触层。 接触层具有逐渐变化的Al元素的组成比。 由半导体发光器件的接触层中的Al元素形成的区域可以提高从有源层发射的光的光提取效率，并且有助于形成反射电极。
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公开(公告)号：US08907320B2
公开(公告)日：2014-12-09
申请号：US13756241
申请日：2013-01-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung-Won Hwang , Geun-Woo Ko , Sung-Hyun Sim , Jung-Sub Kim , Hun-Jae Chung , Cheol-Soo Sone
CPC classification number: H01L33/04 , B82Y10/00 , B82Y20/00 , B82Y99/00 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/42 , H01L2933/0016 , Y10S977/734
Abstract: An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.
Abstract translation: 包括n型半导体层，设置在n型半导体层上的有源层，设置在有源层上并由p型AlGaN形成的p型半导体层的紫外线（UV）发光二极管，以及 p型石墨烯层设置在p型半导体层上并由掺杂有p型掺杂剂的石墨烯形成。 UV发光二极管通过降低与p型半导体层的接触电阻并使UV透射率最大化来提高发光效率。
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