-
公开(公告)号：US09293675B2
公开(公告)日：2016-03-22
申请号：US14594039
申请日：2015-01-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-In Yang , Tae-Hyung Kim , Si-Hyuk Lee , Sang-Yeob Song , Cheol-Soo Sone , Hak-Hwan Kim , Jin-Hyun Lee
CPC classification number: H01L33/62 , H01L33/0025 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
-
公开(公告)号：US08975655B2
公开(公告)日：2015-03-10
申请号：US14483036
申请日：2014-09-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jong-In Yang , Tae-Hyung Kim , Si-Hyuk Lee , Sang-Yeob Song , Cheol-Soo Sone , Hak-Hwan Kim , Jin-Hyun Lee
CPC classification number: H01L33/62 , H01L33/0025 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
Abstract translation: 半导体发光器件及其制造方法。 半导体发光器件包括依次堆叠在衬底上的第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层，通过 基板与第一电极层电连接，第二触点通过基板，第一电极层和绝缘层与第二电极层连通。 第一电极层通过填充穿过第二电极层，第二半导体层和有源层的接触孔而电连接到第一半导体层，并且绝缘层围绕接触孔的内周表面以绝缘 来自第二电极层的第一电极层。
-
3.发明授权Semiconductor light-emitting devices including contact layers to form reflective electrodes 有权包括形成反射电极的接触层的半导体发光器件公开(公告)号：US09012884B2
公开(公告)日：2015-04-21
申请号：US13828346
申请日：2013-03-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung-Sub Kim , Sung-Won Hwang , Geun-Woo Ko , Cheol-Soo Sone , Sung-Hyun Sim , Jin-Sub Lee
CPC classification number: H01L33/405 , H01L33/0075 , H01L33/14 , H01L33/145 , H01L33/305 , H01L33/32 , H01L33/40
Abstract: A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.
Abstract translation: 半导体发光器件包括接触层。 接触层具有逐渐变化的Al元素的组成比。 由半导体发光器件的接触层中的Al元素形成的区域可以提高从有源层发射的光的光提取效率，并且有助于形成反射电极。
-
Patent Agency Ranking
公开(公告)号：US08907320B2
公开(公告)日：2014-12-09
申请号：US13756241
申请日：2013-01-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung-Won Hwang , Geun-Woo Ko , Sung-Hyun Sim , Jung-Sub Kim , Hun-Jae Chung , Cheol-Soo Sone
CPC classification number: H01L33/04 , B82Y10/00 , B82Y20/00 , B82Y99/00 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/42 , H01L2933/0016 , Y10S977/734
Abstract: An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.
Abstract translation: 包括n型半导体层，设置在n型半导体层上的有源层，设置在有源层上并由p型AlGaN形成的p型半导体层的紫外线（UV）发光二极管，以及 p型石墨烯层设置在p型半导体层上并由掺杂有p型掺杂剂的石墨烯形成。 UV发光二极管通过降低与p型半导体层的接触电阻并使UV透射率最大化来提高发光效率。
-
公开(公告)号：US09099631B2
公开(公告)日：2015-08-04
申请号：US14594020
申请日：2015-01-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-In Yang , Tae-Hyung Kim , Si-Hyuk Lee , Sang-Yeob Song , Cheol-Soo Sone , Hak-Hwan Kim , Jin-Hyun Lee
CPC classification number: H01L33/62 , H01L33/0025 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
-
公开(公告)号：US09054259B2
公开(公告)日：2015-06-09
申请号：US13844782
申请日：2013-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung-wook Hwang , Cheol-Soo Sone , Geon-wook Yoo , Dong-hoon Lee , Nam-goo Cha , Jae-hyeok Heo
Abstract: The present application relates to a light-emitting device and method of manufacturing the same. The device includes a lower portion, and vertical light-emitting structures disposed on the lower portion. A conductive member partially surrounds the vertical light-emitting structures, and reflective members are disposed between the vertical light-emitting structures. The reflective members reflect light that is emitted in a lateral direction from the vertical light-emitting structures to minimize the number of times that light emitted in a lateral direction from the vertical light-emitting structure is transmitted through the light-absorbing member, thereby increasing a luminous efficiency.
Abstract translation: 本申请涉及一种发光器件及其制造方法。 该装置包括下部，以及设置在下部的垂直发光结构。 导电构件部分地围绕垂直发光结构，并且反射构件设置在垂直发光结构之间。 反射构件反射从垂直发光结构沿横向发射的光，以使从垂直发光结构沿横向发射的光透过光吸收构件的次数最小化，从而增加 发光效率高。
-
公开(公告)号：US20130313583A1
公开(公告)日：2013-11-28
申请号：US13844782
申请日：2013-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung-wook Hwang , Cheol-Soo Sone , Geno-wook Yoo , Dong-hoon Lee , Nam-goo Cha , Jae-hyeok Heo
IPC: H01L33/08
Abstract: The present application relates to a light-emitting device and method of manufacturing the same. The device includes a lower portion, and vertical light-emitting structures disposed on the lower portion. A conductive member partially surrounds the vertical light-emitting structures, and reflective members are disposed between the vertical light-emitting structures. The reflective members reflect light that is emitted in a lateral direction from the vertical light-emitting structures to minimize the number of times that light emitted in a lateral direction from the vertical light-emitting structure is transmitted through the light-absorbing member, thereby increasing a luminous efficiency.
Abstract translation: 本申请涉及一种发光器件及其制造方法。 该装置包括下部，以及设置在下部的垂直发光结构。 导电构件部分地围绕垂直发光结构，并且反射构件设置在垂直发光结构之间。 反射构件反射从垂直发光结构沿横向发射的光，以使从垂直发光结构沿横向发射的光透过光吸收构件的次数最小化，从而增加 发光效率高。
-
公开(公告)号：US20130193408A1
公开(公告)日：2013-08-01
申请号：US13756241
申请日：2013-01-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung-Won Hwang , Geun-Woo Ko , Sung-Hyun Sim , Jung-Sub Kim , Hun-Jae Chung , Cheol-Soo Sone
IPC: H01L33/04
CPC classification number: H01L33/04 , B82Y10/00 , B82Y20/00 , B82Y99/00 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/42 , H01L2933/0016 , Y10S977/734
Abstract: An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.
Abstract translation: 包括n型半导体层，设置在n型半导体层上的有源层，设置在有源层上并由p型AlGaN形成的p型半导体层的紫外线（UV）发光二极管，以及 p型石墨烯层设置在p型半导体层上并由掺杂有p型掺杂剂的石墨烯形成。 UV发光二极管通过降低与p型半导体层的接触电阻并使UV透射率最大化来提高发光效率。
-
-
-
-
-
-
-
Search Results
8
records
(took 0.015 seconds)
