公开(公告)号：US10108772B2

公开(公告)日：2018-10-23

申请号：US15271883

申请日：2016-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hoon Baek ,  Jae-woo Seo ,  Gi-young Yang ,  Dal-hee Lee ,  Sung-wee Cho

IPC: G06F17/50 ,  H01L29/66 ,  H01L23/528 ,  H01L27/02 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238

Abstract: Methods of generating an integrated circuit layout include forming a standard cell by providing a first active area adjacent to a first cell boundary line. The first active area is spaced apart from the first cell boundary line by a first distance. A second active area is provided adjacent to a second cell boundary line. The second cell boundary line opposes the first cell boundary line. The second active area is spaced apart from the second cell boundary line by a second distance. Fins are formed on the first and second active areas. The fins extend in a first direction and parallel to one another in a second direction substantially perpendicular to the first direction. The first cell boundary line is parallel to the fins. The first distance and the second distance remain constant when a number of the fins on the first and second active areas is changed.

公开(公告)号：US09460259B2

公开(公告)日：2016-10-04

申请号：US14832325

申请日：2015-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hoon Baek ,  Jae-woo Seo ,  Gi-young Yang ,  Dal-hee Lee ,  Sung-wee Cho

IPC: G06F17/50 ,  H01L21/8234 ,  H01L21/8238

CPC classification number: G06F17/5072 ,  G06F17/50 ,  G06F17/5068 ,  G06F17/5077 ,  G06F17/5081 ,  G06F2217/06 ,  G06F2217/12 ,  G06F2217/78 ,  H01L21/823431 ,  H01L21/823821 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/6681

Abstract: Methods of generating an integrated circuit layout include forming a standard cell by providing a first active area adjacent to a first cell boundary line. The first active area is spaced apart from the first cell boundary line by a first distance. A second active area is provided adjacent to a second cell boundary line. The second cell boundary line opposes the first cell boundary line. The second active area is spaced apart from the second cell boundary line by a second distance. Fins are formed on the first and second active areas. The fins extend in a first direction and parallel to one another in a second direction substantially perpendicular to the first direction. The first cell boundary line is parallel to the fins. The first distance and the second distance remain constant when a number of the fins on the first and second active areas is changed.

Abstract translation: 生成集成电路布局的方法包括通过提供与第一单元边界线相邻的第一有源区来形成标准单元。 第一有效区域与第一细胞边界线隔开第一距离。 第二活动区域被设置成与第二单元边界线相邻。 第二细胞边界线与第一细胞边界线相反。 第二有效区域与第二细胞边界线间隔第二距离。 翅片形成在第一和第二活动区域上。 翅片在第一方向上延伸并且在基本上垂直于第一方向的第二方向上彼此平行。 第一个细胞边界线平行于翅片。 当第一和第二有效区域上的多个翅片改变时，第一距离和第二距离保持恒定。