公开(公告)号：US09443735B2

公开(公告)日：2016-09-13

申请号：US14444037

申请日：2014-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Soak Kim ,  Gab Jin Nam ,  Dong Hwan Kim ,  Su Hwan Kim ,  Toshiro Nakanishi ,  Sung Kweon Baek ,  Tae Hyun An ,  Eun Ae Chung

IPC: H01L21/336 ,  H01L21/762 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L21/28185 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66795 ,  H01L29/7833

Abstract: There is provided a method of manufacturing a semiconductor device including: preparing a semiconductor substrate having an active region; forming a dielectric layer for gate insulation on the active region; forming a curing layer with a material containing germanium (Ge) on the dielectric layer; heat-treating the curing layer; and removing the curing layer. The germanium-containing material may be silicon germanium (SiGe) or germanium (Ge).

Abstract translation: 提供一种制造半导体器件的方法，包括：制备具有有源区的半导体衬底; 在所述有源区上形成用于栅极绝缘的介电层; 在介电层上形成含有锗（Ge）的材料的固化层; 热处理固化层; 并去除固化层。 含锗材料可以是硅锗（SiGe）或锗（Ge）。

公开(公告)号：US20150132937A1

公开(公告)日：2015-05-14

申请号：US14444037

申请日：2014-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Soak Kim ,  Gab Jin Nam ,  Dong Hwan Kim ,  Su Hwan Kim ,  Toshiro Nakanishi ,  Sung Kweon Baek ,  Tae Hyun An ,  Eun Ae Chung

IPC: H01L21/28

CPC classification number: H01L21/28185 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66795 ,  H01L29/7833

Abstract: There is provided a method of manufacturing a semiconductor device including: preparing a semiconductor substrate having an active region; forming a dielectric layer for gate insulation on the active region; forming a curing layer with a material containing germanium (Ge) on the dielectric layer; heat-treating the curing layer; and removing the curing layer. The germanium-containing material may be silicon germanium (SiGe) or germanium (Ge).

Abstract translation: 提供一种制造半导体器件的方法，包括：制备具有有源区的半导体衬底; 在所述有源区上形成用于栅极绝缘的介电层; 在介电层上形成含有锗（Ge）的材料的固化层; 热处理固化层; 并去除固化层。 含锗材料可以是硅锗（SiGe）或锗（Ge）。