Semiconductor device and method for fabricating thereof

    公开(公告)号:US12113035B2

    公开(公告)日:2024-10-08

    申请号:US18499527

    申请日:2023-11-01

    CPC classification number: H01L23/642 H10B12/30

    Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

    Semiconductor device and method for fabricating thereof

    公开(公告)号:US11848287B2

    公开(公告)日:2023-12-19

    申请号:US17470370

    申请日:2021-09-09

    CPC classification number: H01L23/642 H10B12/30

    Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

    X-ray imaging apparatus and control method for the same

    公开(公告)号:US10542945B2

    公开(公告)日:2020-01-28

    申请号:US15202012

    申请日:2016-07-05

    Abstract: An X-ray imaging method and an apparatus having an improved structure configured to reduce pain and discomfort during a procedure. The X-ray imaging apparatus acquires an X-ray image by compressing an object that is irradiated by an X-ray source. An X-ray detector includes an object contact material that contacts the object. X-rays that pass through the object are detected X-rays, an electrical signal is generated based on the X-rays. A paddle is disposed between the X-ray source and the X-ray detector to be vertically adjustable relative to the X-ray source and X-ray detector so as to compress the object placed on the object contact surface. The paddle includes a supporting member, a pressure member coupled to the supporting member, and at least one adjustment member arranged between the supporting member and the pressure member to regulate movement of the pressure member according to the shape of the object.

    Unmanned aerial vehicle
    9.
    发明授权

    公开(公告)号:US10793267B2

    公开(公告)日:2020-10-06

    申请号:US15822619

    申请日:2017-11-27

    Abstract: Disclosed are a body of an unmanned aerial vehicle and an unmanned aerial vehicle including the same. The body includes a housing arranged in a first direction and including at least four housing sidewalls and an opening defined by the housing sidewalls and configured to receive a battery pack, a propeller support extending a specific distance from each housing sidewall in a second direction away from the center of the housing and perpendicular to the first direction and having, on a distal end, a motor and a propeller connected to the motor, and a PCB disposed on at least one of the housing sidewalls and associated with operating the motor and the propeller.

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