公开(公告)号：US12113035B2

公开(公告)日：2024-10-08

申请号：US18499527

申请日：2023-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Su Lee ,  Hong Sik Chae ,  Youn Soo Kim ,  Tae Kyun Kim ,  Youn Joung Cho

IPC: H01L23/64 ,  H10B12/00

CPC classification number: H01L23/642 ,  H10B12/30

Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

公开(公告)号：US10049882B1

公开(公告)日：2018-08-14

申请号：US15414913

申请日：2017-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Woong Chung ,  Sun hye Hwang ,  Youn Joung Cho ,  Jung Sik Choi ,  Xiaobing Zhou ,  Brian David Rekken ,  Byung Keun Hwang ,  Michael David Telgenhoff

IPC: H01L21/28 ,  H01L21/02

Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

公开(公告)号：US10468264B2

公开(公告)日：2019-11-05

申请号：US15613737

申请日：2017-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Soon Lim ,  Gyu Hee Park ,  Youn Joung Cho ,  Hyun Suk Lee ,  Gi Hee Cho

IPC: H01L21/30 ,  C30B25/14 ,  C30B29/06 ,  H01L21/768 ,  H01L23/29 ,  H01L23/528

Abstract: A method of fabricating a semiconductor device includes feeding a suppression gas, a source gas, a reactive gas, and a purge gas including an inert gas, into a process chamber in which a substrate is disposed. The suppression gas suppresses the physical adsorption of the source gas onto the substrate. As a result, a thin film is formed on the substrate.

公开(公告)号：US11848287B2

公开(公告)日：2023-12-19

申请号：US17470370

申请日：2021-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-su Lee ,  Hong Sik Chae ,  Youn Soo Kim ,  Tae Kyun Kim ,  Youn Joung Cho

IPC: H01L23/64 ,  H01L27/108 ,  H10B12/00

CPC classification number: H01L23/642 ,  H10B12/30

Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

公开(公告)号：US20230220213A1

公开(公告)日：2023-07-13

申请号：US18145142

申请日：2022-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAE WOON KIM ,  Seung-min Ryu ,  Haruyoshi Sato ,  Kazuya Saito ,  Masayuki Kimura ,  Takahiro Yoshii ,  Tsubasa Shiratori ,  Min Jae Sung ,  Gyu-Hee Park ,  Youn Joung Cho

IPC: C09D1/00 ,  C07F3/00 ,  H10B12/00

CPC classification number: C09D1/00 ,  C07F3/003 ,  H10B12/033

Abstract: Compositions for manufacturing a thin film are provided. The compositions may include a compound having a structure of Chemical Formula 1:




M may be strontium (Sr) or barium (Ba), X1 and X2 may each independently be oxygen (O) or a substituted or unsubstituted alkylamino group having 1 to 5 carbon atoms, R1 and R2 may each independently be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms or a substituted or unsubstituted perfluoro alkyl group having 1 to 5 carbon atoms, R3 may be hydrogen or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, L may be a substituted or unsubstituted polyether having 1 to 6 oxygen atoms, or a substituted or unsubstituted polyamine having 1 to 6 nitrogen atoms, or a substituted or unsubstituted polyetheramine having 1 to 6 oxygen atoms or nitrogen atoms, and n may be an integer of 1 to 6.

公开(公告)号：US09812329B2

公开(公告)日：2017-11-07

申请号：US15291268

申请日：2016-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Woong Chung ,  Youn Joung Cho ,  Jung Sik Choi

IPC: H01L21/285 ,  H01L21/786 ,  H01L21/8238 ,  H01L21/768

CPC classification number: H01L21/28518 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76895 ,  H01L21/823814 ,  H01L21/823871 ,  H01L21/823878 ,  H01L23/485 ,  H01L29/66515 ,  H01L29/66545 ,  H01L29/78

Abstract: There is provides a method of fabricating a semiconductor device to decrease contact resistance of source/drain regions and gate electrodes and thereby improve operation performance. The method includes providing an exposed silicon region, forming a rare earth metal silicide film on the exposed silicon region, the rare earth metal silicide film contacting the silicon region, and forming a contact on the rare earth metal silicide film, the contact being electrically connected to the exposed silicon region, wherein the rare earth metal silicide film is formed by simultaneously supplying a rare earth metal and silicon to the exposed silicon region using physical vapor deposition.

公开(公告)号：US20240071810A1

公开(公告)日：2024-02-29

申请号：US18312811

申请日：2023-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Hyea KO ,  Hoon Han ,  Byung Keun Hwang ,  Young Hun Sung ,  Youn Joung Cho

IPC: H01L21/762 ,  H01L21/8238

CPC classification number: H01L21/76224 ,  H01L21/823878 ,  H01L29/775

Abstract: Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device comprises forming a first layer which has a first surface, does not comprise an acid, and comprises a metal material; forming, on the first layer, a second layer which comprises a trench exposing the first surface, has a second surface intersecting the first surface within the trench, and comprises an acid and an organic material; providing a first precursor comprising an alkoxy group and silicon; and forming a third layer comprising silicon oxide on the second surface within the trench. The third layer is in contact with a portion of the first surface within the trench.

公开(公告)号：US11901191B2

公开(公告)日：2024-02-13

申请号：US17535933

申请日：2021-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Hyea Ko ,  Hee Yeon Jeong ,  Jun Hee Cho ,  Gyu-Hee Park ,  Joong Jin Park ,  Byeong Il Yang ,  Youn Joung Cho ,  Ji Yu Choi

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula




wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C1-C4 alkyl group, and N is nitrogen.

公开(公告)号：US20210380622A1

公开(公告)日：2021-12-09

申请号：US17215056

申请日：2021-03-29

Applicant: Samsung Electronics Co., Ltd. ,  ADEKA CORPORATION

Inventor： Seung-Min Ryu ,  Gyu-Hee Park ,  Youn Joung Cho ,  Kazuki Harano ,  Takanori Koide ,  Wakana Fuse ,  Yoshiki Manabe ,  Yutaro Aoki ,  Hiroyuki Uchiuzou ,  Kazuya Saito

IPC: C07F17/00 ,  C23C16/18 ,  C23C16/455

Abstract: Materials for fabricating a thin film that has improved quality and productivity are provided. The materials may include a Group 5 element precursor of formula (1): M1 may be a Group 5 element, each of R1 to R10 independently may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or f7onnula (2), R11 may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L1 may be an alkyl group, an alkylamino group, an alkoxy group or an alkylsilyl group, each of which may have 1 to 5 carbon atoms and may be substituted or unsubstituted. Formula (2) may have a structure of Each of Ra to Rc independently may be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms.