公开(公告)号：US20170200718A1

公开(公告)日：2017-07-13

申请号：US15384834

申请日：2016-12-20

申请人： Samsung Electronics Co., Ltd.

发明人： Sung-Hyun CHOI ,  Yong-Suk TAK ,  Gi-Gwan PARK ,  Bon-Young KOO ,  Ki-Yeon PARK ,  Won-Oh SEO

IPC分类号： H01L27/088 ,  H01L29/08 ,  H01L23/26 ,  H01L21/02 ,  H01L29/161 ,  H01L29/165 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16

CPC分类号： H01L27/0886 ,  H01L21/02636 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823864 ,  H01L23/26 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7848 ,  H01L29/7851

摘要： A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgassing prevention pattern sequentially stacked.