公开(公告)号：US20170200718A1

公开(公告)日：2017-07-13

申请号：US15384834

申请日：2016-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hyun CHOI ,  Yong-Suk TAK ,  Gi-Gwan PARK ,  Bon-Young KOO ,  Ki-Yeon PARK ,  Won-Oh SEO

IPC: H01L27/088 ,  H01L29/08 ,  H01L23/26 ,  H01L21/02 ,  H01L29/161 ,  H01L29/165 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L27/0886 ,  H01L21/02636 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823864 ,  H01L23/26 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgassing prevention pattern sequentially stacked.

公开(公告)号：US20160372567A1

公开(公告)日：2016-12-22

申请号：US15134906

申请日：2016-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Suk TAK ,  Gyeom KIM ,  Ki-Yeon PARK ,  Sung-Hyun CHOI ,  Bon-Young KOO

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/165 ,  H01L29/08 ,  H01L29/78 ,  H01L29/161

CPC classification number: H01L29/6656 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate including an active fin structure, a plurality of gate structures, a first spacer on sidewalls of each of the gate structures, and a second spacer on sidewalls of the first spacer. The active fin structure may extend in a first direction and including a plurality of active fins with adjacent active fins divided by a recess. Each of the plurality of gate structures may extend in a second direction crossing the first direction, and may cover the active fins. The first spacer may include silicon oxycarbonitride (SiOCN), and may have a first carbon concentration. The second spacer may include SiOCN and may have a second carbon concentration which is different from the first carbon concentration. The semiconductor device may have a low parasitic capacitance and good electrical characteristics.

Abstract translation: 半导体器件包括：衬底，其包括有源鳍结构，多个栅极结构，每个栅极结构的侧壁上的第一间隔物，以及在第一间隔物的侧壁上的第二间隔物。 主动翅片结构可以在第一方向上延伸并且包括多个活动翅片，相邻的活动翅片由凹部分开。 多个栅极结构中的每一个可以在与第一方向交叉的第二方向上延伸，并且可以覆盖活动鳍片。 第一间隔物可以包括硅碳氮氧化物（SiOCN），并且可以具有第一碳浓度。 第二间隔物可以包括SiOCN，并且可以具有不同于第一碳浓度的第二碳浓度。 半导体器件可以具有低寄生电容和良好的电特性。