公开(公告)号：US20180090216A1

公开(公告)日：2018-03-29

申请号：US15493326

申请日：2017-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook-Ghee HAHN ,  Ji-Sang LEE

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/10 ,  G11C16/16

CPC classification number: G11C16/3427 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/16 ,  G11C16/26 ,  G11C16/3459 ,  G11C16/349 ,  G11C2211/563 ,  H01L27/11582

Abstract: In a method of reading data in a nonvolatile memory device including a plurality of memory cells arranged at intersections of a plurality of word-lines and a plurality of bit-lines, a read request on a first word-line of the plurality of word-lines is received, a read operation is performed on a second word-line adjacent to the first word-line and a read operation is performed on the first word-line based on data read from memory cells of the second word-line. The read operation on the first word-line is performed by adjusting a level of recover read voltage applied to the first word-line during the read operation of the first word-line based on at least one of a program state of the data read from memory cells of the second word-line and an operating parameter of the nonvolatile memory device.