公开(公告)号：US20170110197A1

公开(公告)日：2017-04-20

申请号：US15189136

申请日：2016-06-22

申请人： Samsung Electronics Co., Ltd.

发明人： Hyunkook PARK ,  Yeongtaek LEE ,  Daeseok BYEON

IPC分类号： G11C16/28 ,  H03K5/24 ,  G11C16/16 ,  G11C16/04 ,  G11C16/10 ,  H03K5/08 ,  G11C16/08

CPC分类号： G11C16/28 ,  G11C5/147 ,  G11C7/067 ,  G11C7/12 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/16 ,  G11C16/24 ,  G11C2013/0054 ,  H03K5/08 ,  H03K5/24

摘要： Disclosed is a driver circuit. The driver circuit includes a clamp transistor, a comparison voltage transistor, an amplification transistor, a bias transistor, and a charge circuit. The comparison voltage is configured to provide a comparison voltage. The amplification transistor includes an amplification gate connected to a first node of the clamp transistor, a first amplification node configured to receive the comparison voltage, and a second amplification node connected to a gate of the clamp transistor. The bias transistor is configured to supply a bias voltage. The charge circuit is at least one of configured to drain a current from the first node through the clamp transistor and configured to supply a current to the first node through the clamp transistor.