-
公开(公告)号：US09608631B2
公开(公告)日：2017-03-28
申请号：US14723614
申请日：2015-05-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ki Won Lee , Seung Jun Bae , Joon Young Park , Yong Cheol Bae
CPC classification number: G11C7/12 , G11C5/147 , G11C7/1057 , G11C29/021 , G11C29/028 , G11C29/50008 , G11C2207/2254 , H03K19/0005
Abstract: A semiconductor memory device includes a ZQ calibration unit configured to generate a pull-up VOH code according to a first target VOH proportional to a power supply voltage and an output driver configured to generate a data signal having a VOH proportional to the power supply voltage based on the pull-up VOH code, wherein VOH means “output high level voltage.”
-
公开(公告)号：US09209764B2
公开(公告)日：2015-12-08
申请号：US13841199
申请日：2013-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young Chul Cho , Yong Cheol Bae , Yoon Joo Eom , Young Jin Jeon
CPC classification number: H03F3/45179 , G11C7/06 , G11C7/10 , G11C7/1084 , H03F3/45237 , H03F3/45672 , H03F2203/45296 , H03F2203/45316 , H03F2203/45328 , H03F2203/45358 , H03F2203/45372 , H03F2203/45431 , H03F2203/45506
Abstract: A small signal receiver includes a first current adjustment circuit connected between a first power supply voltage terminal and a first node to provide current in response to a self-bias signal, a self-biased differential amplifier connected between the first node and a second node to compare an input signal with a reference voltage, provide the self-bias signal to a self-biasing node and output an output signal through an output node, and a second current adjustment circuit connected between the second node and a second power supply voltage terminal to sink current at the second node in response to the self-bias signal. The self-biased differential amplifier includes a swing stabilizing block connected between an input node to which the input signal is applied and the self-biasing node to stabilize the input signal compared with the reference voltage.
Abstract translation: 小信号接收机包括连接在第一电源电压端和第一节点之间以响应自偏置信号提供电流的第一电流调节电路，连接在第一节点和第二节点之间的自偏置差动放大器 将输入信号与参考电压进行比较，将自偏置信号提供给自偏压节点并通过输出节点输出输出信号，以及连接在第二节点和第二电源电压端之间的第二电流调节电路， 响应于自偏置信号在第二节点处吸收电流。 自偏置差分放大器包括连接在施加输入信号的输入节点和自偏压节点之间的摆动稳定块，以使稳定输入信号与参考电压相比较。
-
Patent Agency Ranking
公开(公告)号：US20140003162A1
公开(公告)日：2014-01-02
申请号：US13841199
申请日：2013-03-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： YOUNG CHUL CHO , Yong Cheol Bae , Yoon Joo Eom , Young Jin Jeon
CPC classification number: H03F3/45179 , G11C7/06 , G11C7/10 , G11C7/1084 , H03F3/45237 , H03F3/45672 , H03F2203/45296 , H03F2203/45316 , H03F2203/45328 , H03F2203/45358 , H03F2203/45372 , H03F2203/45431 , H03F2203/45506
Abstract: A small signal receiver includes a first current adjustment circuit connected between a first power supply voltage terminal and a first node to provide current in response to a self-bias signal, a self-biased differential amplifier connected between the first node and a second node to compare an input signal with a reference voltage, provide the self-bias signal to a self-biasing node and output an output signal through an output node, and a second current adjustment circuit connected between the second node and a second power supply voltage terminal to sink current at the second node in response to the self-bias signal. The self-biased differential amplifier includes a swing stabilizing block connected between an input node to which the input signal is applied and the self-biasing node to stabilize the input signal compared with the reference voltage.
Abstract translation: 小信号接收机包括连接在第一电源电压端和第一节点之间以响应自偏置信号提供电流的第一电流调节电路，连接在第一节点和第二节点之间的自偏置差动放大器 将输入信号与参考电压进行比较，将自偏置信号提供给自偏压节点并通过输出节点输出输出信号，以及连接在第二节点和第二电源电压端之间的第二电流调节电路， 响应于自偏置信号在第二节点处吸收电流。 自偏置差分放大器包括连接在施加输入信号的输入节点和自偏压节点之间的摆动稳定块，以使稳定输入信号与参考电压相比较。
-
公开(公告)号：US09947378B2
公开(公告)日：2018-04-17
申请号：US15729771
申请日：2017-10-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ki Won Lee , Seung Jun Bae , Joon Young Park , Yong Cheol Bae
CPC classification number: G11C7/12 , G11C5/147 , G11C7/1057 , G11C29/021 , G11C29/028 , G11C29/50008 , G11C2207/2254 , H03K19/0005
Abstract: A method of operating a memory controller includes: receiving a data signal from a memory device, wherein the data signal has an output high level voltage (VOH); determining a reference voltage according to the VOH; and comparing the data signal with the reference voltage to determine a received data value, wherein the VOH is proportional to a power supply voltage (VDDQ).
-
公开(公告)号：US09805774B2
公开(公告)日：2017-10-31
申请号：US15426603
申请日：2017-02-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ki Won Lee , Seung Jun Bae , Joon Young Park , Yong Cheol Bae
CPC classification number: G11C7/12 , G11C5/147 , G11C7/1057 , G11C29/021 , G11C29/028 , G11C29/50008 , G11C2207/2254 , H03K19/0005
Abstract: A semiconductor memory device includes a ZQ calibration unit configured to generate a pull-up VOH code according to a first target VOH proportional to a power supply voltage and an output driver configured to generate a data signal having a VOH proportional to the power supply voltage based on the pull-up VOH code, wherein VOH means “output high level voltage.”
-
公开(公告)号：USRE47312E1
公开(公告)日：2019-03-19
申请号：US15486581
申请日：2017-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： David Moon , Yong Cheol Bae , Min Su Ahn , Young Jin Jeon
IPC: H03K19/094 , H04L25/02 , H03K19/0185
Abstract: An integrated circuit comprising an output driver including an output terminal, and a receiving circuit including a termination resistor connected between the output terminal and a ground. The output driver comprising a first NMOS transistor configured to pull up a voltage of the output terminal to a pull-up voltage in response to a pull-up signal, and a second NMOS transistor configured to pull down the output terminal to a ground voltage in response to a pull-down signal.
-
7.发明申请SEMICONDUCTOR MEMORY DEVICE, A MEMORY MODULE INCLUDING THE SAME, AND A MEMORY SYSTEM INCLUDING THE SAME 有权半导体存储器件，包括其的存储器模块，以及包括其的存储器系统公开(公告)号：US20150348603A1
公开(公告)日：2015-12-03
申请号：US14723614
申请日：2015-05-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ki Won LEE , Seung Jun Bae , Joon Young Park , Yong Cheol Bae
CPC classification number: G11C7/12 , G11C5/147 , G11C7/1057 , G11C29/021 , G11C29/028 , G11C29/50008 , G11C2207/2254 , H03K19/0005
Abstract: A semiconductor memory device includes a ZQ calibration unit configured to generate a pull-up VOH code according to a first target VOH proportional to a power supply voltage and an output driver configured to generate a data signal having a VOH proportional to the power supply voltage based on the pull-up VOH code, wherein VOH means “output high level voltage.”
Abstract translation: 半导体存储器件包括：ZQ校准单元，被配置为根据与电源电压成比例的第一目标VOH产生上拉VOH码;以及输出驱动器，被配置为产生具有与电源电压成正比的VOH的数据信号 上拉VOH码，其中VOH表示“输出高电平电压”。
-
-
-
-
-
-
Search Results
7
records
(took 0.014 seconds)
