公开(公告)号：US20210382331A1

公开(公告)日：2021-12-09

申请号：US17409153

申请日：2021-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd ,  SAMSUNG SDI CO., LTD.

Inventor： Deukseok CHUNG ,  Shin Ae JUN ,  Tae Won JEONG ,  Yong Seok HAN

IPC: G02F1/017 ,  G02F1/1362 ,  G02F1/1335 ,  G02F1/13357 ,  G03F7/00 ,  G03F7/033 ,  G03F7/004 ,  C09K11/62 ,  C09K11/70 ,  C09K11/02

Abstract: A layered structure including a transparent substrate; a photoluminescent layer disposed on the transparent substrate and a pattern of a quantum dot polymer composite; and a capping layer disposed on the photoluminescent layer and including an inorganic material, a method of producing the same, a liquid crystal display including the same. The quantum dot polymer composite includes a polymer matrix; and a plurality of quantum dots in the polymer matrix, the pattern of the quantum dot polymer composite includes at least one repeating section and the repeating section includes a first section configured to emit light of a first peak wavelength, the inorganic material is disposed on at least a portion of a surface of the repeating section, and the inorganic material includes a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof.

公开(公告)号：US20200283680A1

公开(公告)日：2020-09-10

申请号：US16883989

申请日：2020-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung SDI Co., Ltd. ,  Samsung Display Co., Ltd.

Inventor： Shin Ae JUN ,  Taekhoon KIM ,  Garam PARK ,  Yong Seok HAN ,  Eun Joo JANG ,  Hyo Sook JANG ,  Tae Won JEONG ,  Shang Hyeun PARK

IPC: C09K11/02 ,  C09K11/88 ,  C09K11/70 ,  C08K3/32 ,  C08K3/30 ,  G02F1/1335 ,  G02F1/13357

Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.

公开(公告)号：US20250040296A1

公开(公告)日：2025-01-30

申请号：US18783623

申请日：2024-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hyun MIN ,  DAEUN YOON ,  Won Sik YOON ,  Jae Yong LEE ,  Hogeun CHANG ,  Hyundong HA ,  Yong Seok HAN

IPC: H01L33/06 ,  H01L25/075 ,  H01L33/00 ,  H01L33/28 ,  H01L33/30

Abstract: A semiconductor nanoparticle, a method of preparing the semiconductor nanoparticle, and an electroluminescent device including the semiconductor nanoparticle. The method of preparing the semiconductor nanoparticle includes contacting a zinc precursor and a sulfur precursor in the presence of a first particle at a predetermined temperature to form a semiconductor nanocrystal layer containing zinc sulfide on the first particle, wherein the first particle includes a Group II-VI compound including zinc, selenium, and, optionally, tellurium, or the first particle includes a Group III-V compound including indium and phosphorus. The predetermined temperature includes (e.g., is) a temperature (e.g., a reaction temperature) of greater than 300° C. and less than or equal to about 380° C., and the sulfur precursor includes a thiol compound of C3 (e.g. C9) to C50 or a combination thereof.

公开(公告)号：US20230071604A1

公开(公告)日：2023-03-09

申请号：US18054687

申请日：2022-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Kun Su PARK ,  Yuho WON ,  Jeong Hee LEE ,  Eun Joo JANG ,  Eun Joo JANG ,  Hyo Sook JANG ,  Yong Seok HAN ,  Heejae CHUNG

IPC: C09K11/88 ,  H01L51/50

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

公开(公告)号：US20210104696A1

公开(公告)日：2021-04-08

申请号：US17062162

申请日：2020-10-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sujin PARK ,  Yuho WON ,  Eun Joo JANG ,  Dae Young CHUNG ,  Sung Woo KIM ,  Jin A. KIM ,  Yong Seok HAN

IPC: H01L51/50 ,  H01L51/00

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, each of the first and second quantum dots has a core-shell structure including one or more shells, and the first and second quantum dots have different numbers of shells from each other or have different total thicknesses of the one or more shells from each other.

公开(公告)号：US20200332189A1

公开(公告)日：2020-10-22

申请号：US16851495

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee LEE ,  Hyo Sook JANG ,  Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Yuho WON ,  Eun Joo JANG ,  Yong Seok HAN

IPC: C09K11/88 ,  H01L33/06 ,  H01L33/28 ,  H01L33/00

Abstract: A semiconductor nanocrystal particle including a core including a first semiconductor nanocrystal including zinc (Zn) and sulfur (S), selenium (Se), tellurium (Te), or a combination thereof; and a shell including a second semiconductor nanocrystal disposed on at least a portion of the core, wherein the core includes a dopant of a Group 1A element, a Group 2A element, or a combination thereof, and the semiconductor nanocrystal particle exhibits a maximum peak emission in a wavelength region of about 440 nanometers (nm) to about 470 nm.

公开(公告)号：US20180157124A1

公开(公告)日：2018-06-07

申请号：US15872595

申请日：2018-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok HAN ,  Nayoun WON ,  Hyun A KANG ,  Ha Il KWON ,  Shang Hyeun PARK ,  Eun Joo JANG ,  Shin Ae JUN ,  Deukseok CHUNG ,  Tae Won JEONG

IPC: G02F1/1335 ,  G02B5/20 ,  G03F7/00

CPC classification number: G02F1/133617 ,  G02B5/201 ,  G02B5/207 ,  G02F1/133504 ,  G02F1/133514 ,  G02F1/133615 ,  G02F1/133621 ,  G02F2001/133614 ,  G02F2202/36 ,  G03F7/0007

Abstract: A color filter including a first region configured to emit a first light, a second region configured to emit a second light having a longer wavelength than a wavelength of the first light, a third region configured to emit a third light having a longer wavelength than the wavelength of the second light, a first layer including two or more quantum dots, and a second layer formed on at least one surface of the first layer, wherein the first layer and the second layer are disposed in at least the second region and the third region.

公开(公告)号：US20230235220A1

公开(公告)日：2023-07-27

申请号：US18159871

申请日：2023-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Eun Joo JANG ,  Hyo Sook JANG ,  Yong Seok HAN ,  Ilyoung LEE ,  Oul CHO

IPC: C09K11/70 ,  H10K50/115

CPC classification number: C09K11/70 ,  H10K50/115

Abstract: An electroluminescent device including a first electrode, a second electrode, and a light-emitting layer disposed between the first electrode and the second electrode, the light-emitting layer including a plurality of semiconductor nanoparticles, wherein the light-emitting layer is configured to emit green light, wherein the plurality of semiconductor nanoparticles include a first semiconductor nanocrystal including indium, phosphorus, and optionally zinc, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein the zinc chalcogenide includes zinc, selenium, and sulfur, wherein in the plurality of the semiconductor nanoparticles, a mole ratio of zinc to indium is greater than or equal to about 60:1, and



wherein the electroluminescent device is configured to exhibit a T90 of greater than or equal to about 120 hours as measured with an initial driving luminance of about 2700 nit.

公开(公告)号：US20230114604A1

公开(公告)日：2023-04-13

申请号：US18065910

申请日：2022-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok HAN ,  Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Kun Su PARK ,  Yuho WON ,  Jeong Hee LEE ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: H01L33/06 ,  H01L33/20 ,  C09K11/88 ,  C01B19/04 ,  H01L33/26

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

公开(公告)号：US20220017818A1

公开(公告)日：2022-01-20

申请号：US17490552

申请日：2021-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Nayoun WON ,  Sungwoo HWANG ,  Eun Joo JANG ,  Soo Kyung KWON ,  Yong Wook KIM ,  Jihyun MIN ,  Garam PARK ,  Shang Hyeun PARK ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yong Seok HAN

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L51/50 ,  H01L27/32 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.