MAGNETIC MEMORY DEVICES
    3.
    发明申请

    公开(公告)号:US20200152700A1

    公开(公告)日:2020-05-14

    申请号:US16434478

    申请日:2019-06-07

    Abstract: A magnetic memory device includes a first magnetic tunnel junction pattern on a substrate, a second magnetic tunnel junction pattern on the first magnetic tunnel junction pattern, and a conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern. The conductive line is configured such that a current flowing through the conductive line flows in parallel to an interface between the conductive line and each of the first and second magnetic tunnel junction patterns.

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