公开(公告)号：US10576582B2

公开(公告)日：2020-03-03

申请号：US16029828

申请日：2018-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Hoo Kim ,  Il-Sang Lee ,  Yong-sun Ko ,  Chang-Gil Ryu ,  Kun-Tack Lee ,  Hyo-San Lee

IPC: H01L21/00 ,  B23K26/146 ,  B08B7/00 ,  B08B3/10 ,  C11D11/00 ,  H01L21/67 ,  H01L21/687

Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

公开(公告)号：US10029332B2

公开(公告)日：2018-07-24

申请号：US14706546

申请日：2015-05-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Hoo Kim ,  Il-Sang Lee ,  Yong-sun Ko ,  Chang-Gil Ryu ,  Kun-Tack Lee ,  Hyo-San Lee

IPC: H01L21/00 ,  B23K26/146 ,  B08B7/00 ,  B08B3/10 ,  C11D11/00 ,  H01L21/67 ,  H01L21/687

Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

公开(公告)号：US11887868B2

公开(公告)日：2024-01-30

申请号：US17215928

申请日：2021-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-hoo Kim ,  Sang-jine Park ,  Yong-jhin Cho ,  Yeon-jin Gil ,  Ji-hoon Jeong ,  Byung-kwon Cho ,  Yong-sun Ko ,  Kun-tack Lee

IPC: H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  H01L21/687

CPC classification number: H01L21/67034 ,  B08B7/0021 ,  H01L21/6719 ,  H01L21/67126 ,  H01L21/68735 ,  H01L21/02101

Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

公开(公告)号：US11664243B2

公开(公告)日：2023-05-30

申请号：US16440201

申请日：2019-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-jine Park ,  Seung-ho Lee ,  Bo-wo Choi ,  Yong-sun Ko ,  Woo-gwan Shim

IPC: H01L21/67

CPC classification number: H01L21/67063 ,  H01L21/67115 ,  H01L21/67259

Abstract: A substrate processing apparatus includes: a spin chuck, on which a substrate is mounted, the spin chuck rotating the substrate; At least one of a chemical liquid nozzle configured to provide a chemical liquid to a surface of the substrate and a deionzed water nozzle configured to provide a deionized water to a surface of the substrate; and a laser device configured to emit a pulse waver laser beam having a period of 10−9 seconds or less for etching an edge of the substrate.

公开(公告)号：US10438891B2

公开(公告)日：2019-10-08

申请号：US15697881

申请日：2017-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-jine Park ,  Kee-sang Kwon ,  Jae-jik Baek ,  Yong-sun Ko ,  Kwang-wook Lee

IPC: H01L23/532 ,  H01L23/522 ,  H01L29/78 ,  H01L21/768 ,  H01L21/285 ,  H01L21/8234 ,  H01L29/417

Abstract: An integrated circuit device includes an insulating film on a substrate, a lower wiring layer penetrating at least a portion of the insulating film, the lower wiring layer including a first metal, a lower conductive barrier film surrounding a bottom surface and a sidewall of the lower wiring layer, the lower conductive barrier film including a second metal different from the first metal, a first metal silicide capping layer covering a top surface of the lower wiring layer, the first metal silicide capping layer including the first metal, and a second metal silicide capping layer contacting the first metal silicide capping layer and disposed on the lower conductive barrier film, the second metal silicide capping layer including the second metal.