公开(公告)号：US11887868B2

公开(公告)日：2024-01-30

申请号：US17215928

申请日：2021-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-hoo Kim ,  Sang-jine Park ,  Yong-jhin Cho ,  Yeon-jin Gil ,  Ji-hoon Jeong ,  Byung-kwon Cho ,  Yong-sun Ko ,  Kun-tack Lee

IPC: H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  H01L21/687

CPC classification number: H01L21/67034 ,  B08B7/0021 ,  H01L21/6719 ,  H01L21/67126 ,  H01L21/68735 ,  H01L21/02101

Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

公开(公告)号：US09754806B2

公开(公告)日：2017-09-05

申请号：US14580513

申请日：2014-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo-San Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67017 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32816 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67276 ,  Y10T137/2931 ,  Y10T137/4673

Abstract: Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.