-
公开(公告)号：US09064801B1
公开(公告)日：2015-06-23
申请号：US14161721
申请日：2014-01-23
申请人： International Business Machines Corporation , GLOBALFOUNDRIES Inc. , Samsung Electronics Co., Ltd.
发明人： David V. Horak , Jin Wook Lee , Daniel Pham , Shom S. Ponoth , Balasubramanian Pranatharthiharan
IPC分类号： H01L21/336 , H01L21/28 , H01L29/51 , H01L21/283
CPC分类号： H01L21/283 , H01L21/76832 , H01L21/76834 , H01L21/76897 , H01L29/6653 , H01L29/66545 , H01L29/66628
摘要： A method of forming a semiconductor structure includes forming a metal gate above a semiconductor substrate and gate spacers adjacent to the metal gate surrounded by an interlevel dielectric (ILD) layer. The gate spacers and the metal gate are recessed until a height of the metal gate is less than a height of the gate spacers. An etch stop liner is deposited above the gate spacers and the metal gate. A gate cap is deposited above the etch stop liner to form a bi-layer gate cap. A contact hole is formed in the ILD layer adjacent to the metal gate, the etch stop liner in the bi-layer gate cap prevents damage of the gate spacers during formation of the contact hole. A conductive material is deposited in the contact hole to form a contact to a source-drain region in the semiconductor substrate.
摘要翻译： 形成半导体结构的方法包括在半导体衬底之上形成金属栅极和邻近由层间电介质（ILD）层围绕的金属栅极的栅极间隔。 栅极间隔物和金属栅极凹入直到金属栅极的高度小于栅极间隔物的高度。 蚀刻停止衬垫沉积在栅极间隔物和金属栅极上方。 栅极盖沉积在蚀刻停止衬垫上方以形成双层栅极盖。 在与金属栅极相邻的ILD层中形成接触孔，双层栅极帽中的蚀刻停止衬垫防止在形成接触孔期间损坏栅极间隔物。 导电材料沉积在接触孔中以与半导体衬底中的源极 - 漏极区形成接触。
-
公开(公告)号：US11367776B2
公开(公告)日：2022-06-21
申请号：US16836428
申请日：2020-03-31
发明人： Kwang-Young Lee , Jin Wook Lee
IPC分类号： H01L29/06 , H01L29/78 , H01L29/66 , H01L29/417 , H01L21/768 , H01L21/8234
摘要： A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.
-
公开(公告)号：US20210066453A1
公开(公告)日：2021-03-04
申请号：US16836428
申请日：2020-03-31
发明人： Kwang-Young Lee , Jin Wook Lee
IPC分类号： H01L29/06 , H01L29/417 , H01L29/66 , H01L29/78
摘要： A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.
-
4.发明申请公开(公告)号：US20190309415A1
公开(公告)日：2019-10-10
申请号：US16200149
申请日：2018-11-26
发明人： Yeonock Han , Wonwoong Chung , Keum Seok Park , Pankwi Park , Jeongho Yoo , Younjoung Cho , Byung Koo Kong , Mijeong Kim , Jin Wook Lee , Changeun Jang
IPC分类号： C23C16/448 , H01L21/02
摘要： A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.
-
5.发明授权公开(公告)号：US10883173B2
公开(公告)日：2021-01-05
申请号：US16200149
申请日：2018-11-26
发明人： Yeonock Han , Wonwoong Chung , Keum Seok Park , Pankwi Park , Jeongho Yoo , Younjoung Cho , Byung Koo Kong , Mijeong Kim , Jin Wook Lee , Changeun Jang
IPC分类号： F17C1/00 , F17C13/02 , C23C16/448 , H01L21/02
摘要： A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.
-
公开(公告)号：US20140210017A1
公开(公告)日：2014-07-31
申请号：US14243358
申请日：2014-04-02
发明人： Myeongcheol Kim , Sooyeon Jeong , Joon Goo Hong , Dohyoung Kim , Yongjin Kim , Jin Wook Lee , Yoonhae Kim
IPC分类号： H01L29/49
CPC分类号： H01L29/4966 , H01L21/76804 , H01L21/76831 , H01L21/76895 , H01L21/76897 , H01L29/4958 , H01L29/4975 , H01L29/66545
摘要： A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes.
摘要翻译： 半导体器件和形成半导体器件的方法包括：在半导体衬底上形成栅电极并在栅电极的两个侧表面上形成间隔物; 在栅电极上形成封盖图案; 以及在栅电极之间形成金属接触。 每个封盖图案形成为具有大于每个栅电极的宽度的宽度。
-
公开(公告)号：US11978769B2
公开(公告)日：2024-05-07
申请号：US17663202
申请日：2022-05-12
发明人： Kwang-Young Lee , Jin Wook Lee
IPC分类号： H01L29/06 , H01L21/768 , H01L21/8234 , H01L29/417 , H01L29/66 , H01L29/78
CPC分类号： H01L29/0669 , H01L21/76895 , H01L21/823475 , H01L29/41791 , H01L29/66795 , H01L29/785
摘要： A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.
-
公开(公告)号：US20230146540A1
公开(公告)日：2023-05-11
申请号：US17967626
申请日：2022-10-17
发明人： Jin Wook Lee
IPC分类号： G06F3/06
CPC分类号： G06F3/0659 , G06F3/0623 , G06F3/0653 , G06F3/0683
摘要： An operating method of a storage controller includes receiving a permanent write protection command; checking a distribution of first data included in a target namespace corresponding to the permanent write protection command; setting at least one memory region as a protected memory region, based on at least one metric corresponding to each of a plurality of non-volatile memory devices; and migrating at least a portion of the first data, which is stored in a remaining memory region different from the protected memory region, to the protected memory region
-
9.发明授权公开(公告)号：US09881838B2
公开(公告)日：2018-01-30
申请号：US15413472
申请日：2017-01-24
发明人： Yoon Hae Kim , Jin Wook Lee , Jong Ki Jung , Myung Il Kang , Kwang Yong Yang , Kwan Heum Lee , Byeong Chan Lee
IPC分类号： H01L21/82 , H01L21/8234 , H01L29/66 , H01L21/308 , H01L29/08 , H01L21/311 , H01L21/3105 , H01L29/78 , H01L27/088 , H01L29/165 , H01L27/11 , H01L21/8238 , H01L27/092
CPC分类号： H01L21/823431 , H01L21/308 , H01L21/31053 , H01L21/31111 , H01L21/31116 , H01L21/823418 , H01L21/823437 , H01L21/823468 , H01L21/823814 , H01L21/823821 , H01L21/823828 , H01L21/823864 , H01L27/0207 , H01L27/088 , H01L27/0886 , H01L27/092 , H01L27/0924 , H01L27/1104 , H01L29/0847 , H01L29/165 , H01L29/6653 , H01L29/66545 , H01L29/66636 , H01L29/7848
摘要： A semiconductor device includes a substrate having a first region and a second region, a plurality of first gate structures in the first region, the first gate structures being spaced apart from each other by a first distance, a plurality of second gate structures in the second region, the second gate structures being spaced apart from each other by a second distance, a first spacer on sidewalls of the first gate structures, a dielectric layer on the first spacer, a second spacer on sidewalls of the second gate structures, and a third spacer on the second spacer.
-
-
-
-
-
-
-
-
搜索结果
9 条记录 (耗时 0.017 秒)
