公开(公告)号：US20240153991A1

公开(公告)日：2024-05-09

申请号：US18229218

申请日：2023-08-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Gyeom KIM ,  Da Hye KIM ,  Young Kwang KIM ,  Jin Bum KIM ,  Kyung Bin CHUN

IPC分类号： H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

摘要： A semiconductor device includes: an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern; a gate structure disposed on the lower pattern; and a source/drain pattern disposed on the lower pattern, and connected to each of the plurality of sheet patterns, wherein the plurality of sheet patterns include a first sheet pattern and a second sheet pattern. The second sheet pattern is disposed between the first sheet pattern and the lower pattern. A first upper width of an upper surface of the first sheet pattern is greater than a first lower width of a bottom surface of the first sheet pattern, and a second upper width of an upper surface of the second sheet pattern is smaller than a second lower width of a bottom surface of the second sheet pattern.

公开(公告)号：US20240145541A1

公开(公告)日：2024-05-02

申请号：US18313630

申请日：2023-05-08

申请人： Samsung Electronics Co., Ltd.

发明人： Da Hye KIM ,  Jin Bum KIM ,  Gyeom KIM ,  Young Kwang KIM ,  Kyung Bin CHUN

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

摘要： A semiconductor device includes an active pattern including a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction. The sheet patterns include an uppermost sheet pattern and a plurality of gate structures on the lower pattern and spaced apart from each other in the first direction. Each of the plurality of gate structures includes a gate electrode and a gate insulating film and a source/drain pattern between adjacent ones of the plurality of gate structures. Each of inner gate structures includes a gate electrode and a gate insulating film. A semiconductor liner film includes silicon-germanium, and contacts the gate insulating film of each of the inner gate structures. A portion of the semiconductor liner film protrudes upwardly in the first direction beyond an upper surface of the uppermost sheet pattern.