公开(公告)号：US09299811B2

公开(公告)日：2016-03-29

申请号：US14519771

申请日：2014-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook-Je Kim ,  Jae-Yup Chung ,  Jong-Seo Hong ,  Cheol Kim ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Hee-Don Jeong ,  Soo-Hun Hong ,  Sang-Bom Kang ,  Myeong-Cheol Kim ,  Young-Su Chung

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L29/66795 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: Semiconductor devices may include first and second fins that protrude from a substrate, extend in a first direction, and are separated from each other in the first direction. Semiconductor devices may also include a field insulating layer that is disposed between the first and second fins to extend in a second direction intersecting the first direction, an etch-stop layer pattern that is formed on the field insulating layer and a dummy gate structure that is formed on the etch-stop layer pattern.

Abstract translation: 半导体器件可以包括从基板突出的第一和第二鳍片，沿第一方向延伸，并且在第一方向上彼此分离。 半导体器件还可以包括场绝缘层，其设置在第一和第二鳍之间，沿与第一方向相交的第二方向延伸，形成在场绝缘层上的蚀刻停止层图案和伪栅极结构， 形成在蚀刻停止层图案上。

公开(公告)号：US20150147860A1

公开(公告)日：2015-05-28

申请号：US14519771

申请日：2014-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook-Je Kim ,  Jae-Yup Chung ,  Jong-Seo Hong ,  Cheol Kim ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Hee-Don Jeong ,  Soo-Hun Hong ,  Sang-Bom Kang ,  Myeong-Cheol Kim ,  Young-Su Chung

IPC: H01L29/66

CPC classification number: H01L29/66795 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: Semiconductor devices may include first and second fins that protrude from a substrate, extend in a first direction, and are separated from each other in the first direction. Semiconductor devices may also include a field insulating layer that is disposed between the first and second fins to extend in a second direction intersecting the first direction, an etch-stop layer pattern that is formed on the field insulating layer and a dummy gate structure that is formed on the etch-stop layer pattern.

Abstract translation: 半导体器件可以包括从基板突出的第一和第二鳍片，沿第一方向延伸，并且在第一方向上彼此分离。 半导体器件还可以包括场绝缘层，其设置在第一和第二鳍之间，沿与第一方向相交的第二方向延伸，形成在场绝缘层上的蚀刻停止层图案和伪栅极结构， 形成在蚀刻停止层图案上。