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公开(公告)号:US10141427B2
公开(公告)日:2018-11-27
申请号:US15187430
申请日:2016-06-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyung-In Choi , Gyeom Kim , Hong-Sik Yoon , Bon-Young Koo , Wook-Je Kim
IPC: H01L29/66 , H01L29/768 , H01L29/78 , H01L21/8234 , H01L21/8238
Abstract: A semiconductor device includes a gate pattern on a substrate, a multi-channel active pattern under the gate pattern to cross the gate pattern and having a first region not overlapping the gate pattern and a second region overlapping the gate pattern, a diffusion layer in the multi-channel active pattern along the outer periphery of the first region and including an impurity having a concentration, and a liner on the multi-channel active pattern, the liner extending on lateral surfaces of the first region and not extending on a top surface of the first region. Related fabrication methods are also described.
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公开(公告)号:US20160149003A1
公开(公告)日:2016-05-26
申请号:US14855533
申请日:2015-09-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyung-In Choi , Wook-Je Kim , Baek-Hap Choi , Jin-Hee Han , Hyun-Gi Hong
IPC: H01L29/10 , H01L21/265 , H01L21/266 , H01L21/8234 , H01L21/768 , H01L29/66 , H01L21/324
CPC classification number: H01L29/1054 , H01L21/26513 , H01L21/26586 , H01L21/266 , H01L21/28525 , H01L21/324 , H01L21/76879 , H01L21/76886 , H01L21/76897 , H01L21/823412 , H01L21/823431 , H01L21/8258 , H01L29/6659 , H01L29/7834
Abstract: In methods of manufacturing a semiconductor device, a stress channel layer is formed on a semiconductor substrate. A first ion-implantation process is performed on the semiconductor substrate or the stress channel layer at a temperature ranging from about 100° C. to about 600° C. A gate structure is formed on the stress channel layer. A first source/drain region is formed at an upper portion of the stress channel layer adjacent to the gate structure.
Abstract translation: 在制造半导体器件的方法中,在半导体衬底上形成应力沟道层。 在约100℃至约600℃的温度范围内,在半导体衬底或应力沟道层上进行第一离子注入工艺。在应力沟道层上形成栅极结构。 第一源极/漏极区域形成在与栅极结构相邻的应力沟道层的上部。
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公开(公告)号:US09299811B2
公开(公告)日:2016-03-29
申请号:US14519771
申请日:2014-10-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Wook-Je Kim , Jae-Yup Chung , Jong-Seo Hong , Cheol Kim , Hee-Soo Kang , Hyun-Jo Kim , Hee-Don Jeong , Soo-Hun Hong , Sang-Bom Kang , Myeong-Cheol Kim , Young-Su Chung
IPC: H01L29/66 , H01L21/8234 , H01L29/78 , H01L29/165
CPC classification number: H01L29/66795 , H01L21/823431 , H01L21/823481 , H01L29/165 , H01L29/66545 , H01L29/7848
Abstract: Semiconductor devices may include first and second fins that protrude from a substrate, extend in a first direction, and are separated from each other in the first direction. Semiconductor devices may also include a field insulating layer that is disposed between the first and second fins to extend in a second direction intersecting the first direction, an etch-stop layer pattern that is formed on the field insulating layer and a dummy gate structure that is formed on the etch-stop layer pattern.
Abstract translation: 半导体器件可以包括从基板突出的第一和第二鳍片,沿第一方向延伸,并且在第一方向上彼此分离。 半导体器件还可以包括场绝缘层,其设置在第一和第二鳍之间,沿与第一方向相交的第二方向延伸,形成在场绝缘层上的蚀刻停止层图案和伪栅极结构, 形成在蚀刻停止层图案上。
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公开(公告)号:US20150147860A1
公开(公告)日:2015-05-28
申请号:US14519771
申请日:2014-10-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Wook-Je Kim , Jae-Yup Chung , Jong-Seo Hong , Cheol Kim , Hee-Soo Kang , Hyun-Jo Kim , Hee-Don Jeong , Soo-Hun Hong , Sang-Bom Kang , Myeong-Cheol Kim , Young-Su Chung
IPC: H01L29/66
CPC classification number: H01L29/66795 , H01L21/823431 , H01L21/823481 , H01L29/165 , H01L29/66545 , H01L29/7848
Abstract: Semiconductor devices may include first and second fins that protrude from a substrate, extend in a first direction, and are separated from each other in the first direction. Semiconductor devices may also include a field insulating layer that is disposed between the first and second fins to extend in a second direction intersecting the first direction, an etch-stop layer pattern that is formed on the field insulating layer and a dummy gate structure that is formed on the etch-stop layer pattern.
Abstract translation: 半导体器件可以包括从基板突出的第一和第二鳍片,沿第一方向延伸,并且在第一方向上彼此分离。 半导体器件还可以包括场绝缘层,其设置在第一和第二鳍之间,沿与第一方向相交的第二方向延伸,形成在场绝缘层上的蚀刻停止层图案和伪栅极结构, 形成在蚀刻停止层图案上。
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