公开(公告)号：US10784294B2

公开(公告)日：2020-09-22

申请号：US16263459

申请日：2019-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-gu Jin ,  Young-chan Kim ,  Tae-sub Jung

IPC: H01L31/0232 ,  H01L27/146 ,  H01L27/148 ,  H04N5/3745 ,  H04N5/378

Abstract: An image sensor includes unit pixels, and from among the unit pixels, a first unit pixel and a second unit pixel that are adjacent to each other each include a first tap having a first photo gate, to which a first signal having a first phase difference with respect to an optical signal is applied, and a second tap having a second photo gate, to which a second signal having a second phase difference with respect to the optical signal is applied. A location of the first tap in the first unit pixel and a location of the first tap in the second unit pixel, and a location of the second tap in the first unit pixel and a location of the second tap in the second unit pixel are symmetrical with each other based on one point between the first unit pixel and the second unit pixel.

公开(公告)号：US09711675B2

公开(公告)日：2017-07-18

申请号：US14533216

申请日：2014-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seoung-hyun Kim ,  Won-joo Kim ,  Young-gu Jin

IPC: H01L31/113 ,  H01L27/146 ,  H01L31/0352 ,  H04N5/378

CPC classification number: H01L31/1136 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1464

Abstract: Disclosed are a sensing pixel and an image sensor including the same. The sensing pixel includes a determination region, which includes one or more floating body transistors, and an integration region that is adjacent to a floating body region of one of the one or more floating body transistors, absorbs light to generate an electron-hole pair including an electron and a positive hole, and transfers the electron or the positive hole to the floating body region of the one floating body transistor.

公开(公告)号：US20150122973A1

公开(公告)日：2015-05-07

申请号：US14533216

申请日：2014-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seoung-hyun Kim ,  Won-joo Kim ,  Young-gu Jin

IPC: H01L31/113 ,  H01L31/0352 ,  H04N5/378 ,  H01L27/146

CPC classification number: H01L31/1136 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1464

Abstract: Disclosed are a sensing pixel and an image sensor including the same. The sensing pixel includes a determination region, which includes one or more floating body transistors, and an integration region that is adjacent to a floating body region of one of the one or more floating body transistors, absorbs light to generate an electron-hole pair including an electron and a positive hole, and transfers the electron or the positive hole to the floating body region of the one floating body transistor.

Abstract translation: 公开了一种感测像素和包括其的图像传感器。 感测像素包括包括一个或多个浮体晶体管的确定区域和与一个或多个浮体晶体管之一的浮体区域相邻的积分区域，吸收光以产生电子空穴对，其包括 电子和正空穴，并将电子或正空穴传送到一个浮体晶体管的浮体区域。

公开(公告)号：US11204415B2

公开(公告)日：2021-12-21

申请号：US16356023

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-gu Jin ,  Young-chan Kim ,  Chang-rok Moon ,  Yong-hun Kwon ,  Tae-sub Jung

IPC: G01S7/499 ,  H01L27/146 ,  G01S7/481 ,  G02B5/30 ,  G01S17/42

Abstract: A 3D image sensor include a depth pixel and at least two polarization pixels adjacent to the depth pixel. The depth pixel includes a charge generation region in a substrate. The depth pixel is configured to generate depth information associated with a depth of an object from the 3D image sensor in a 3D scene based on detecting light reflected from the object. Each polarization pixel includes a photodiode in the substrate and a polarizer on the substrate in a light-incident direction. The polarization pixel is configured to generate shape information associated with a shape of a surface of the object in the 3D scene based on detecting light reflected from the object. The polarization pixels and the depth pixel collectively define a unit pixel. The respective polarizers are associated with different polarization directions.

公开(公告)号：US11762073B2

公开(公告)日：2023-09-19

申请号：US17536556

申请日：2021-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-gu Jin ,  Young-chan Kim ,  Chang-rok Moon ,  Yong-hun Kwon ,  Tae-sub Jung

IPC: G01S7/499 ,  H01L27/146 ,  G01S7/481 ,  G02B5/30 ,  G01S17/42

CPC classification number: G01S7/499 ,  G01S7/4816 ,  G01S17/42 ,  G02B5/3058 ,  H01L27/1463 ,  H01L27/14607 ,  H01L27/14625 ,  H01L27/14643

Abstract: A 3D image sensor include a depth pixel and at least two polarization pixels adjacent to the depth pixel. The depth pixel includes a charge generation region in a substrate. The depth pixel is configured to generate depth information associated with a depth of an object from the 3D image sensor in a 3D scene based on detecting light reflected from the object. Each polarization pixel includes a photodiode in the substrate and a polarizer on the substrate in a light-incident direction. The polarization pixel is configured to generate shape information associated with a shape of a surface of the object in the 3D scene based on detecting light reflected from the object. The polarization pixels and the depth pixel collectively define a unit pixel. The respective polarizers are associated with different polarization directions.

公开(公告)号：US11342368B2

公开(公告)日：2022-05-24

申请号：US17096210

申请日：2020-11-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-gu Jin ,  Young-chan Kim

IPC: H01L27/146 ,  G01S17/08 ,  G01S7/481 ,  G11C11/56 ,  G01S7/4914

Abstract: An image sensor includes a semiconductor substrate including a first surface and a second surface and further includes a well region and a first floating diffusion region that are each adjacent to the first surface. The image sensor includes a first vertical transmission gate and a second vertical transmission gate isolated from direct contact with each other and each extend from the first surface of the semiconductor substrate and in a thickness direction of the semiconductor substrate through at least a portion of the well region. The image sensor includes a first storage gate between the first vertical transmission gate and the first floating diffusion region and on the first surface of the semiconductor substrate. The image sensor includes a first tap transmission gate between the first storage gate and the first floating diffusion region and on the first surface of the semiconductor substrate.

公开(公告)号：US10861886B2

公开(公告)日：2020-12-08

申请号：US16460440

申请日：2019-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-gu Jin ,  Tae-sub Jung ,  Young-chan Kim

IPC: H01L27/146 ,  H04N5/378 ,  G01S17/89 ,  H04N5/369

Abstract: An image sensor including a light source configured to emit an optical signal to a target object, and a pixel array including a first pixel configured to generate pixel signals based on the optical signal reflected from the target object, the first pixel including a first photo gate group having at least two photo gates that are configured to receive first gate signals with a first phase difference from the optical signal in a time interval and a second photo gate group having at least two photo gates configured to receive second gate signals with a second phase difference from the optical signal in the time interval, may be provided.