公开(公告)号：US20230224401A1

公开(公告)日：2023-07-13

申请号：US18121859

申请日：2023-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunsu OK ,  Youngmok KIM ,  Hyelin LEE ,  Dahee LIM ,  Minjung KIM

IPC: H04M1/72454 ,  H04M1/72403 ,  H04M1/02

CPC classification number: H04M1/72454 ,  H04M1/72403 ,  H04M1/0235 ,  H04M2201/38

Abstract: An electronic device according to various embodiments of the present disclosure may comprise: a display which can be expanded or reduced; at least one sensor; and a processor, wherein the processor is configured to: identify whether an input is received; based on identifying that an input has been received, identify whether the display is expanded or reduced within a given period of time, using the at least one sensor; and based on identifying that expansion or reduction of the display is started within the given period of time, execute a specified function corresponding to the identified input.

公开(公告)号：US20210383735A1

公开(公告)日：2021-12-09

申请号：US17139449

申请日：2020-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngmok KIM ,  Kyunglyong KANG ,  Jungu KANG ,  Boyoung SEO ,  Yongsang JEONG

IPC: G09G3/20

Abstract: A display apparatus includes a display panel; and a display driver integrated circuit (DDI) chip coupled to the display panel, the DDI chip being configured to generate a display driving signal for driving the display panel based on image data. The DDI chip may include: a first embedded memory device embedded in the DDI chip and configured to store compensation data for compensating for electrical and optical characteristics of a plurality of pixels included in the display panel; a timing controller configured to control signals for driving the display panel, and to generate a data control signal based on the image data and the compensation data; and a data driver configured to provide a data voltage to the display panel according to the data control signal. The first embedded memory device may not include static random access memory (SRAM).

公开(公告)号：US20170053806A1

公开(公告)日：2017-02-23

申请号：US15239364

申请日：2016-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyunglyong KANG ,  Youngmok KIM ,  Hodae OH ,  Kyoung-Eun UHM

IPC: H01L21/28 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L21/76877 ,  H01L21/28123 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/823462 ,  H01L21/823481 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7833

Abstract: A method for manufacturing a semiconductor device includes forming a device isolation layer in a substrate to define an active region, forming a gate insulating layer covering at least a portion of the active region, forming a gate electrode on the gate insulating layer, and forming an interlayer insulating layer on the gate electrode. The gate insulating layer includes a first portion overlapping with the active region and a second portion overlapping with the device isolation layer. The forming of the gate insulating layer includes etching at least a part of the second portion of the gate insulating layer to thin the part of the second portion of the gate insulating layer.

Abstract translation: 一种制造半导体器件的方法包括在衬底中形成器件隔离层以限定有源区，形成覆盖有源区的至少一部分的栅极绝缘层，在栅极绝缘层上形成栅电极， 栅电极上的层间绝缘层。 栅极绝缘层包括与有源区重叠的第一部分和与器件隔离层重叠的第二部分。 栅极绝缘层的形成包括蚀刻栅极绝缘层的第二部分的至少一部分，以使栅极绝缘层的第二部分的一部分变薄。