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公开(公告)号：US20170324050A1
公开(公告)日：2017-11-09
申请号：US15262302
申请日：2016-09-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngnam KWON , Junghwa KIM , Jaewon JANG
CPC classification number: H01L51/052 , H01G4/005 , H01G4/04 , H01L29/51
Abstract: A dielectric and a dielectric ink include a dielectric material. The dielectric material includes ceramide or a ceramide derivative. A capacitor and a transistor may include the dielectric material. A device may include at least one of a capacitor and a transistor that includes the dielectric material. A dielectric that includes ceramide or a ceramide derivative may be configured to provide dielectric performance in a bio field. The effect on a human body by the dielectric may be reduced, based on the dielectric material of the dielectric including ceramide or a ceramide derivative.
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公开(公告)号：US20190334110A1
公开(公告)日：2019-10-31
申请号：US16505710
申请日：2019-07-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dongjin YUN , Sunghoon PARK , Seong Heon KIM , Hyangsook LEE , Woon Jung PAEK , Youngnam KWON , Yongsu KIM , Jaegwan CHUNG
IPC: H01L51/52 , H01B1/22 , H01L51/00 , H01L21/3213
Abstract: A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 Ω/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.
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公开(公告)号：US20210110975A1
公开(公告)日：2021-04-15
申请号：US17038904
申请日：2020-09-30
Inventor： Hyungjun KIM , Taniguchi TAKAAKI , Sasaki TAKAYOSHI , Osada MINORU , Chan KWAK , Youngnam KWON , Changsoo LEE
Abstract: Provided are a dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film, the dielectric monolayer thin film including an oxide which is represented by Formula 1 and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen. A2Bn−3CnO3n+1 wherein, in Formula 1, A is a divalent element, B is a monovalent element, C is a pentavalent element, and n is a number from 3 to 8.
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公开(公告)号：US20160226012A1
公开(公告)日：2016-08-04
申请号：US14788780
申请日：2015-06-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dongjin YUN , Sunghoon PARK , Seong Heon KIM , Hyangsook LEE , Woon Jung PAEK , Youngnam KWON , Yongsu KIM , Jaegwan CHUNG
IPC: H01L51/52 , H01L51/00 , H01L21/3213
CPC classification number: H01L51/5206 , H01B1/22 , H01L21/32131 , H01L51/0035 , H01L51/004 , H01L51/0067 , H01L51/0097 , H01L51/5234
Abstract: A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 Ω/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.
Abstract translation: 导体包括多个金属纳米结构和有机材料，其中围绕每个金属纳米结构的有机材料的一部分被选择性地去除，并且导体具有小于或等于约1.1的雾度，更大的透光率 在约550nm处为约85％以上，薄层电阻小于或等于约100Ω/ sq。 电子设备包括导体，制造导体的方法包括制备包括金属纳米结构和有机材料的导电膜，并使用簇离子束溅射从导电膜选择性地除去有机材料。
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