公开(公告)号：US10897280B2

公开(公告)日：2021-01-19

申请号：US16725243

申请日：2019-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongho Lee ,  Yunsung Cho ,  Daehyun Kang ,  Byungjoon Park ,  Hyunchul Park ,  Juho Son

IPC: H03F3/68 ,  H04W88/08 ,  H04B1/38 ,  H01L23/66 ,  H01Q1/24 ,  H01Q3/26 ,  H01Q23/00 ,  H03F3/21 ,  H01Q21/06

Abstract: A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. The electronic device includes a first antenna module including a first amplifier configured to amplify a signal received from a communication circuit, a second antenna module including a second amplifier configured to amplify a signal received from the communication circuit, and an impedance matching circuit disposed between an output terminal of the first amplifier and an output terminal of the second amplifier.

公开(公告)号：US11979119B2

公开(公告)日：2024-05-07

申请号：US17250748

申请日：2019-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul Park ,  Byungjoon Park ,  Daehyun Kang ,  Juho Son ,  Sunggi Yang ,  Jeongho Lee ,  Yunsung Cho

IPC: H03F1/22 ,  H03F1/08 ,  H03F1/32 ,  H03F1/56 ,  H03F3/193 ,  H03F3/21 ,  H03F3/24

CPC classification number: H03F3/245 ,  H03F1/086 ,  H03F1/3205 ,  H03F1/565 ,  H03F3/193 ,  H03F3/21

Abstract: Disclosed is a 5G (5th generation) or pre-5G communication system for supporting a data transmission rate higher than that of a 4G (4th generation) communication system such as long-term evolution (LTE). A transmission device comprises: a first amplification unit having a common source structure, including cross coupled capacitors, and amplifying an input signal; a second amplification unit, having a common gate structure, for amplifying a signal output from the first amplification unit; and a first removal unit which is connected to output terminals of the first amplification unit and input terminals of the second amplification unit and which removes at least one portion of second harmonics. The first removal unit can offset, with respect to a fundamental frequency, at least some of parasitic capacitance generated from the output terminals of the first amplification unit and the input terminals of the second amplification unit, and can ground a signal having a secondary harmonic frequency with respect to the secondary harmonic frequency.

公开(公告)号：US11165403B2

公开(公告)日：2021-11-02

申请号：US16503888

申请日：2019-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul Park ,  Kihyun Kim ,  Byungjoon Park ,  Juho Son ,  Yunsung Cho

IPC: H01Q1/00 ,  H03H2/00 ,  H01Q1/24 ,  H01Q9/04 ,  H04B7/0413 ,  H01Q15/24 ,  H01Q21/06

Abstract: The present disclosure relates to a communication technique for converging Internet of Things (IoT) technology with a 5th Generation (5G) communication system for supporting a higher data transfer rate beyond a 4th Generation (4G) system, and a system therefor. The disclosure can be applied to intelligent services (e.g., smart homes, smart buildings, smart cities, smart or connected cars, health care, digital education, retail business, and services associated with security and safety) on the basis of 5G communication technology and IoT-related technology. An antenna module is provided. The antenna module includes an antenna, and at least one transmission line configured to transmit a first signal through the antenna for transmission or receive a second signal through the antenna for reception. The length of the transmission line may be determined based on the impedance when the first signal or the second signal flows through the transmission line.

公开(公告)号：US11245371B2

公开(公告)日：2022-02-08

申请号：US16727105

申请日：2019-12-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kihyun Kim ,  Hyunchul Park ,  Kyuhwan An ,  Jaesik Jang ,  Yunsung Cho

IPC: H03F3/72 ,  H03F1/22 ,  H03F1/02 ,  H03F3/19

Abstract: An electronic device including an amplifier which includes a first transistor configured to receive an input signal through a gate terminal thereof and having a source terminal electrically connected to ground, a second transistor configured to transmit an output signal through a drain terminal thereof and having a gate terminal electrically connected to the ground, and a switch electrically connected to the gate terminal of the second transistor and configured to switch a voltage being supplied to the gate terminal of the second transistor in accordance with turn-on or turn-off of the amplifier.

公开(公告)号：US10720930B2

公开(公告)日：2020-07-21

申请号：US16434893

申请日：2019-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchang Yoon ,  Kyuhwan An ,  Daehyun Kang ,  Juho Son ,  Sunggi Yang ,  Donghyun Lee ,  Yunsung Cho

IPC: H03L7/183 ,  H03L7/22 ,  H03L7/07 ,  H04W72/04 ,  H03L7/197

Abstract: A communication technique for converging internet of everything (IoT) technology with a 5th generation (5G) communication system for supporting a higher data transfer rate beyond a 4G system is provided. The communication technique can be applied to intelligent services, based on 5G communication technology and IoT-related technology. In an embodiment, an electronic device includes a first processor configured to output a first signal for generating a first frequency signal, a second processor configured to output a second signal for generating a second frequency signal, a first radio frequency (RF) chip configured to output the first frequency signal, based on the first signal received from the first processor and a baseband signal, and a second RF chip configured to output the second frequency signal, based on the second signal received from the second processor and the first frequency signal outputted from the first RF chip.