公开(公告)号：US08664027B2

公开(公告)日：2014-03-04

申请号：US13364476

申请日：2012-02-02

申请人： San Yu ,  Atul Gupta

发明人： San Yu ,  Atul Gupta

IPC分类号： H01L21/00

CPC分类号： H01L33/44 ,  H01L21/2654 ,  H01L21/26586 ,  H01L33/0095 ,  H01L2933/0025

摘要： A method of LED manufacturing is disclosed. A coating is applied to a mesa. This coating may have different thicknesses on the sidewalls of the mesa compared to the top of the mesa. Ion implantation into the mesa will form implanted regions in the sidewalls in one embodiment. These implanted regions may be used for LED isolation or passivation.

摘要翻译： 公开了一种LED制造方法。 将涂层施加到台面。 与台面的顶部相比，该涂层在台面的侧壁上可能具有不同的厚度。 在一个实施例中，离子注入台面将在侧壁中形成注入区域。 这些注入区可用于LED隔离或钝化。

公开(公告)号：US20120238046A1

公开(公告)日：2012-09-20

申请号：US13364476

申请日：2012-02-02

申请人： San Yu ,  Atul Gupta

发明人： San Yu ,  Atul Gupta

IPC分类号： H01L21/265 ,  H01L33/32

CPC分类号： H01L33/44 ,  H01L21/2654 ,  H01L21/26586 ,  H01L33/0095 ,  H01L2933/0025

摘要： A method of LED manufacturing is disclosed. A coating is applied to a mesa. This coating may have different thicknesses on the sidewalls of the mesa compared to the top of the mesa. Ion implantation into the mesa will form implanted regions in the sidewalls in one embodiment. These implanted regions may be used for LED isolation or passivation.

摘要翻译： 公开了一种LED制造方法。 将涂层施加到台面。 与台面的顶部相比，该涂层在台面的侧壁上可能具有不同的厚度。 在一个实施例中，离子注入台面将在侧壁中形成注入区域。 这些注入区可用于LED隔离或钝化。

公开(公告)号：US20110244616A1

公开(公告)日：2011-10-06

申请号：US13074137

申请日：2011-03-29

申请人： San Yu ,  Chi-Chun Chen

发明人： San Yu ,  Chi-Chun Chen

IPC分类号： H01L33/26

CPC分类号： H01L33/145 ,  H01L33/0079

摘要： An improved method of fabricating a vertical semiconductor LED is disclosed. Ions are implanted into the LED to create non-conductive regions, which facilitates current spreading in the device. In some embodiments, the non-conductive regions are located in the p-type layer. In other embodiments, the non-conductive layer may be in the multi-quantum well or n-type layer.

摘要翻译： 公开了一种制造垂直半导体LED的改进方法。 将离子注入到LED中以产生非导电区域，这有助于电流在器件中的扩散。 在一些实施例中，非导电区域位于p型层中。 在其它实施例中，非导电层可以在多量子阱或n型层中。

公开(公告)号：US20060226330A1

公开(公告)日：2006-10-12

申请号：US11103074

申请日：2005-04-11

申请人： San Yu

发明人： San Yu

IPC分类号： F16M13/00 ,  A47G29/00

CPC分类号： E04F11/1834 ,  E04F11/1804

摘要： A bar support rack includes a base, a rotation member rotatably mounted on the base, and a locking member mounted between the base and the rotation member so that the rotation member is angle adjustably located on the base. Thus, the angle between the rotation member and the base can be adjusted so as to adjust the position of the bar mounted on the connecting portion of the rotation member so that the inclined angle of the bar can be adjusted arbitrarily, thereby enhancing the versatility of the bar support rack.

摘要翻译： 杆支撑架包括底座，可旋转地安装在基座上的旋转构件和安装在基座和旋转构件之间的锁定构件，使得旋转构件可调节地位于基座上。 因此，可以调节旋转构件和基座之间的角度，以便调节安装在旋转构件的连接部分上的杆的位置，使得杆的倾斜角度可以任意调节，从而提高 酒吧支撑架。

公开(公告)号：US08658513B2

公开(公告)日：2014-02-25

申请号：US13098942

申请日：2011-05-02

申请人： Fareen Adeni Khaja ,  Deepak Ramappa ,  San Yu ,  Chi-Chun Chen

发明人： Fareen Adeni Khaja ,  Deepak Ramappa ,  San Yu ,  Chi-Chun Chen

IPC分类号： H01L21/76

CPC分类号： H01L21/2654 ,  H01L21/26586 ,  H01L21/26593 ,  H01L21/266 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/38

摘要： An improved method of creating LED arrays is disclosed. A p-type layer, multi-quantum well and n-type layer are disposed on a substrate. The device is then etched to expose portions of the n-type layer. To create the necessary electrical isolation between adjacent LEDs, an ion implantation is performed to create a non-conductive implanted region. In some embodiments, an implanted region extends through the p-type layer, MQW and n-type layer. In another embodiment, a first implanted region is created in the n-type layer. In addition, a second implanted region is created in the p-type layer and multi-quantum well immediately adjacent to etched n-type layer. In some embodiments, the ion implantation is done perpendicular to the substrate. In other embodiments, the implant is performed at an angle.

摘要翻译： 公开了一种改进的LED阵列的制造方法。 p型层，多量子阱和n型层设置在基板上。 然后将器件蚀刻以暴露n型层的部分。 为了在相邻LED之间创建必要的电隔离，执行离子注入以产生非导电注入区域。 在一些实施例中，注入区域延伸穿过p型层，MQW和n型层。 在另一个实施例中，在n型层中形成第一注入区。 此外，在p型层和紧邻蚀刻的n型层的多量子阱中产生第二注入区。 在一些实施例中，垂直于衬底完成离子注入。 在其他实施例中，以一定角度执行植入物。

公开(公告)号：US08263422B2

公开(公告)日：2012-09-11

申请号：US13090301

申请日：2011-04-20

申请人： San Yu ,  Chi-Chun Chen

发明人： San Yu ,  Chi-Chun Chen

IPC分类号： H01L21/00

CPC分类号： H01L33/145

摘要： An improved method of creating LEDs is disclosed. Rather than using a dielectric coating to separate the bond pads from the top surface of the LED, this region of the LED is implanted with ions to increase its resistivity to minimize current flow therethrough. In another embodiment, a plurality of LEDs are produced on a single substrate by implanting ions in the regions between the LEDs and then etching a trench, where the trench is narrower than the implanted regions and positioned within these regions. This results in a trench where both sides have current confinement capabilities to reduce leakage.

摘要翻译： 公开了一种改进的产生LED的方法。 不是使用电介质涂层来将接合焊盘与LED的顶表面分离，所以LED的这个区域被注入离子以增加其电阻率以最小化通过其中的电流。 在另一个实施例中，通过在LED之间的区域中注入离子然后蚀刻沟槽，在单个衬底上产生多个LED，其中沟槽比注入区域更窄并且位于这些区域内。 这导致沟槽，其中两侧具有电流限制能力以减少泄漏。

公开(公告)号：US08597962B2

公开(公告)日：2013-12-03

申请号：US13074137

申请日：2011-03-29

申请人： San Yu ,  Chi-Chun Chen

发明人： San Yu ,  Chi-Chun Chen

IPC分类号： H01L21/00 ,  H01L51/40

CPC分类号： H01L33/145 ,  H01L33/0079

摘要： An improved method of fabricating a vertical semiconductor LED is disclosed. Ions are implanted into the LED to create non-conductive regions, which facilitates current spreading in the device. In some embodiments, the non-conductive regions are located in the p-type layer. In other embodiments, the non-conductive layer may be in the multi-quantum well or n-type layer.

摘要翻译： 公开了一种制造垂直半导体LED的改进方法。 将离子注入到LED中以产生非导电区域，这有助于电流在器件中的扩散。 在一些实施例中，非导电区域位于p型层中。 在其它实施例中，非导电层可以在多量子阱或n型层中。

公开(公告)号：US20110275173A1

公开(公告)日：2011-11-10

申请号：US13098942

申请日：2011-05-02

申请人： Fareen Adeni Khaja ,  Deepak Ramappa ,  San Yu ,  Chi-Chun Chen

发明人： Fareen Adeni Khaja ,  Deepak Ramappa ,  San Yu ,  Chi-Chun Chen

IPC分类号： H01L33/08

CPC分类号： H01L21/2654 ,  H01L21/26586 ,  H01L21/26593 ,  H01L21/266 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/38

摘要： An improved method of creating LED arrays is disclosed. A p-type layer, multi-quantum well and n-type layer are disposed on a substrate. The device is then etched to expose portions of the n-type layer. To create the necessary electrical isolation between adjacent LEDs, an ion implantation is performed to create a non-conductive implanted region. In some embodiments, an implanted region extends through the p-type layer, MQW and n-type layer. In another embodiment, a first implanted region is created in the n-type layer. In addition, a second implanted region is created in the p-type layer and multi-quantum well immediately adjacent to etched n-type layer. In some embodiments, the ion implantation is done perpendicular to the substrate. In other embodiments, the implant is performed at an angle.

摘要翻译： 公开了一种改进的LED阵列的制造方法。 p型层，多量子阱和n型层设置在基板上。 然后将器件蚀刻以暴露n型层的部分。 为了在相邻LED之间创建必要的电隔离，执行离子注入以产生非导电注入区域。 在一些实施例中，注入区域延伸穿过p型层，MQW和n型层。 在另一个实施例中，在n型层中形成第一注入区。 此外，在p型层和紧邻蚀刻的n型层的多量子阱中产生第二注入区。 在一些实施例中，垂直于衬底完成离子注入。 在其他实施例中，以一定角度执行植入物。

公开(公告)号：US20110263054A1

公开(公告)日：2011-10-27

申请号：US13090301

申请日：2011-04-20

申请人： San Yu ,  Chi-Chun Chen

发明人： San Yu ,  Chi-Chun Chen

IPC分类号： H01L33/04

CPC分类号： H01L33/145

摘要： An improved method of creating LEDs is disclosed. Rather than using a dielectric coating to separate the bond pads from the top surface of the LED, this region of the LED is implanted with ions to increase its resistivity to minimize current flow therethrough. In another embodiment, a plurality of LEDs are produced on a single substrate by implanting ions in the regions between the LEDs and then etching a trench, where the trench is narrower than the implanted regions and positioned within these regions. This results in a trench where both sides have current confinement capabilities to reduce leakage.

摘要翻译： 公开了一种改进的产生LED的方法。 不是使用电介质涂层来将接合焊盘与LED的顶表面分离，所以LED的这个区域被注入离子以增加其电阻率以最小化通过其中的电流。 在另一个实施例中，通过在LED之间的区域中注入离子然后蚀刻沟槽，在单个衬底上产生多个LED，其中沟槽比注入区域更窄并且位于这些区域内。 这导致沟槽，其中两侧具有电流限制能力以减少泄漏。

公开(公告)号：US07915819B2

公开(公告)日：2011-03-29

申请号：US11403708

申请日：2006-04-13

申请人： Isao Yoshida ,  Hiroki Hamada ,  Joe Acchione ,  Yongbao Xin ,  San Yu

发明人： Isao Yoshida ,  Hiroki Hamada ,  Joe Acchione ,  Yongbao Xin ,  San Yu

IPC分类号： H05B33/14

CPC分类号： H05B33/14 ,  C09K11/7734 ,  H05B33/22

摘要： A novel laminate is provided to improve the operating stability of thioaluminate based phosphors used in ac thick film dielectric electroluminescent displays. The novel structure comprises a rare earth activated alkaline earth thioaluminate phosphor thin film layer and a magnesium oxide or magnesium oxide containing layer provided directly adjacent and in contact with the bottom of the phosphor thin film layer. The invention is particularly applicable to phosphors used in electroluminescent displays that employ thick dielectric layers subject to high processing temperatures to form and activate the phosphor films.

摘要翻译： 提供了一种新颖的层压材料，以改善在ac厚膜电介质电致发光显示器中使用的硫铝酸盐基磷光体的操作稳定性。 该新型结构包括稀土活化的碱土金属硫铝酸盐荧光体薄膜层和直接邻近并与荧光体薄膜层的底部接触的氧化镁或氧化镁含有层。 本发明特别适用于采用在高处理温度下形成和激活荧光膜的厚电介质层的电致发光显示器中使用的荧光体。