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公开(公告)号:US10134474B1
公开(公告)日:2018-11-20
申请号:US15789095
申请日:2017-10-20
Applicant: SanDisk Technologies LLC
Inventor: Yi-Chieh Chen
Abstract: An apparatus includes a first plane of memory cells including an associated first buffer, a second plane of memory cells including an associated second buffer. The apparatus also includes a controller configured to transfer data corresponding to a first memory state the first buffer and transfer data corresponding to a second memory state to the second buffer. The apparatus also includes state machine configured to apply program pulses to the first and second planes of memory cells. The apparatus also includes read/write circuitry configured to independently confirm that the first and second planes of memory cells have reached the first and second memory states.
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公开(公告)号:US10014056B1
公开(公告)日:2018-07-03
申请号:US15598936
申请日:2017-05-18
Applicant: SanDisk Technologies LLC
Inventor: Aaron Lee , Yi-Chieh Chen , Anne Koh , Gulzar Kathawala , Mrinal Kochar
CPC classification number: G11C7/22 , G11C7/222 , G11C13/004 , G11C13/0069 , G11C16/0483 , G11C16/10 , G11C16/26 , G11C29/023 , G11C29/028 , G11C29/18 , G11C29/36 , G11C2029/0409 , G11C2029/1804
Abstract: Apparatuses, systems, methods, and computer program products are disclosed for changing storage parameters. An integrated circuit (IC) memory element receives a command to change a value of a parameter associated with the IC memory element. A parameter includes a setting for one or more storage operations of an IC memory element. An IC memory element receives one or more data sets with a command. A data set includes an identifier associated with a parameter to be changed and a new value for the parameter. Each of one or more data sets is received at a same data rate as a command. An IC memory element writes, for each of one or more data sets, a new value for a parameter to a storage location associated with the parameter.
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