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    Three-dimensional image sensors and methods of manufacturing the same
    1.
    发明授权
    Three-dimensional image sensors and methods of manufacturing the same 有权
    三维图像传感器及其制造方法

    公开(公告)号：US08581964B2

    公开(公告)日：2013-11-12

    申请号：US12905458

    申请日：2010-10-15

    申请人： Sang-Chul Sul ,  Won-Cheol Jung ,  Yoon-Dong Park ,  Myung-Bok Lee ,  Young-Gu Jin

    发明人： Sang-Chul Sul ,  Won-Cheol Jung ,  Yoon-Dong Park ,  Myung-Bok Lee ,  Young-Gu Jin

    IPC分类号： H04N7/18

    CPC分类号： H01L31/02162 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14645 ,  H04N13/254

    摘要： Image sensors include three-dimensional (3D) color image sensors having an array of sensor pixels therein. A 3-D color image sensor may include a 3-D image sensor pixel having a plurality of color sensors and a depth sensor therein. The plurality of color sensors may include red, green and blue sensors extending adjacent the depth sensor. A rejection filter is also provided. This rejection filter, which extends opposite a light receiving surface of the 3-D image sensor pixel, is configured to be selectively transparent to visible and near-infrared light relative to far-infrared light. The depth sensor may also include an infrared filter that is selectively transparent to near-infrared light having wavelengths greater than about 700 nm relative to visible light.

    摘要翻译： 图像传感器包括其中具有传感器像素阵列的三维（3D）彩色图像传感器。 3-D彩色图像传感器可以包括具有多个颜色传感器和其中的深度传感器的3-D图像传感器像素。 多个颜色传感器可以包括邻近深度传感器延伸的红色，绿色和蓝色传感器。 还提供了一个拒收过滤器。 与3-D图像传感器像素的光接收表面相对延伸的该拒绝滤光器被配置为相对于远红外光对可见光和近红外光选择性地透明。 深度传感器还可以包括对于相对于可见光具有大于约700nm的波长的近红外光选择性透明的红外滤光器。

    Three-Dimensional Image Sensors and Methods of Manufacturing the Same
    2.
    发明申请
    Three-Dimensional Image Sensors and Methods of Manufacturing the Same 有权
    三维图像传感器及其制造方法

    公开(公告)号：US20110102547A1

    公开(公告)日：2011-05-05

    申请号：US12905458

    申请日：2010-10-15

    申请人： Sang-Chul Sul ,  Won-Cheol Jung ,  Yoon-Dong Park ,  Myung-Bok Lee ,  Young-Gu Jin

    发明人： Sang-Chul Sul ,  Won-Cheol Jung ,  Yoon-Dong Park ,  Myung-Bok Lee ,  Young-Gu Jin

    IPC分类号： H04N13/02 ,  H01L31/0232

    CPC分类号： H01L31/02162 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14645 ,  H04N13/254

    摘要： Image sensors include three-dimensional (3D) color image sensors having an array of sensor pixels therein. A 3-D color image sensor may include a 3-D image sensor pixel having a plurality of color sensors and a depth sensor therein. The plurality of color sensors may include red, green and blue sensors extending adjacent the depth sensor. A rejection filter is also provided. This rejection filter, which extends opposite a light receiving surface of the 3-D image sensor pixel, is configured to be selectively transparent to visible and near-infrared light relative to far-infrared light. The depth sensor may also include an infrared filter that is selectively transparent to near-infrared light having wavelengths greater than about 700 nm relative to visible light.

    摘要翻译： 图像传感器包括其中具有传感器像素阵列的三维（3D）彩色图像传感器。 3-D彩色图像传感器可以包括具有多个颜色传感器和其中的深度传感器的3-D图像传感器像素。 多个颜色传感器可以包括邻近深度传感器延伸的红色，绿色和蓝色传感器。 还提供了一个拒收过滤器。 与3-D图像传感器像素的光接收表面相对延伸的该拒绝滤光器被配置为相对于远红外光对可见光和近红外光选择性地透明。 深度传感器还可以包括对于相对于可见光具有大于约700nm的波长的近红外光选择性透明的红外滤光器。

    Image sensor and semiconductor device including the same
    3.
    发明申请
    Image sensor and semiconductor device including the same 审中-公开
    图像传感器和包括其的半导体器件

    公开(公告)号：US20110001205A1

    公开(公告)日：2011-01-06

    申请号：US12801745

    申请日：2010-06-23

    申请人： Sang-Chul Sul ,  Yoon-Dong Park ,  Myung-Bok Lee ,  Young-Gu Jin

    发明人： Sang-Chul Sul ,  Yoon-Dong Park ,  Myung-Bok Lee ,  Young-Gu Jin

    IPC分类号： H01L31/0232 ,  H04N5/225

    CPC分类号： H04N5/3696 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L31/02162 ,  H04N5/2226 ,  H04N9/045

    摘要： Example embodiments relate to a three-dimensional image sensor including a color pixel array on a substrate, a distance pixel array on the substrate, an RGB filter on the color pixel array and configured to allow visible light having a first wavelength to pass, a near infrared light filter on the distance pixel array and configured to allow near infrared light having a second wavelength to pass, and a stack type single band filter on the RGB filter and the near infrared light filter and configured to allow light having a third wavelength between the first wavelength and the second wavelength to pass. According to example embodiments, a semiconductor device may include a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; a RGB filter on the light-inducing member and configured to allow visible light to pass; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and a plurality of lenses on the RGB filter and the near infrared light filter.

    摘要翻译： 示例性实施例涉及三维图像传感器，其包括在基板上的彩色像素阵列，基板上的距离像素阵列，彩色像素阵列上的RGB滤光器，并且被配置为允许具有第一波长的可见光通过， 距离像素阵列上的红外光滤光器，并且被配置为允许具有第二波长的近红外光通过;以及在RGB滤光器和近红外光滤光器上的堆叠型单波段滤光器，并且被配置为允许具有第三波长的光 第一波长和第二波长通过。 根据示例性实施例，半导体器件可以在衬底上包括彩色像素阵列; 衬底上的距离像素阵列; 在所述彩色像素阵列和所述距离像素阵列上的导光构件; 在所述光诱导构件上的RGB滤光器，并且被配置为允许可见光通过; 在所述导光部件上的近红外光滤光器，其被配置为允许近红外光通过; 以及RGB滤光器和近红外光滤光器上的多个透镜。

    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    图像传感器及其制造方法

    公开(公告)号：US20110128423A1

    公开(公告)日：2011-06-02

    申请号：US12944272

    申请日：2010-11-11

    申请人： Myung-Bok LEE ,  Sang-Chul Sul ,  Young-Gu Jin

    发明人： Myung-Bok LEE ,  Sang-Chul Sul ,  Young-Gu Jin

    IPC分类号： H04N5/335

    CPC分类号： H04N9/045 ,  H01L27/14621 ,  H04N5/332

    摘要： An image sensor includes a plurality of color sensors, a plurality of depth sensors, a near-infrared cut filter, a color filter, a pass filter and a rejection filter. The color sensors and depth sensors are formed on a substrate. The near-infrared cut filter and the color filter are formed on the color sensors. The pass filter is formed on the depth sensors, and is adapted to transmit light having a wavelength longer than an upper limit of a visible light wavelength. The pass filter has a multi-layer structure wherein a semiconductor material and a semiconductor oxide material are alternately stacked. The rejection filter is formed over the near-infrared cut filter, the color filter and the pass filter, and is adapted to transmit light having a wavelength shorter than an upper limit of a near-infrared light wavelength.

    摘要翻译： 图像传感器包括多个颜色传感器，多个深度传感器，近红外截止滤光器，滤色器，通过滤光器和拒绝滤光器。 颜色传感器和深度传感器形成在基板上。 近红外截止滤光器和滤色器形成在彩色传感器上。 通过滤波器形成在深度传感器上，并且适于透射波长比可见光波长的上限长的波长。 通过滤波器具有多层结构，其中半导体材料和半导体氧化物材料交替堆叠。 抑制滤波器形成在近红外截止滤波器，滤色器和通过滤波器上，并且适于透射波长短于近红外光波长的上限的光。

    Optical sensor and semiconductor device
    5.
    发明申请
    Optical sensor and semiconductor device 审中-公开
    光学传感器和半导体器件

    公开(公告)号：US20110013055A1

    公开(公告)日：2011-01-20

    申请号：US12801938

    申请日：2010-07-02

    申请人： Sang-Chul Sul ,  Myung-Bok Lee ,  Hoon-Sang Oh ,  Young-Gu Jin

    发明人： Sang-Chul Sul ,  Myung-Bok Lee ,  Hoon-Sang Oh ,  Young-Gu Jin

    IPC分类号： H04N5/335

    CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14632

    摘要： Example embodiments are directed to a semiconductor device including a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; an infrared light cut filter on the light-inducing member and configured to block infrared light; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and an RGB filter on the light-inducing member and configured to allow visible light to pass. According to example embodiments, a method of manufacturing a semiconductor device may include forming a color pixel array on a substrate; forming a distance pixel array on the substrate; forming a light-inducing member on the color pixel array and the distance pixel array; forming an infrared light cut filter on the light-inducing member; forming a near infrared light filter on the light-inducing member; forming a RGB filter on the light-inducing member; and forming a plurality of lenses on the infrared light cut filter and the near infrared light filter.

    摘要翻译： 示例性实施例涉及在衬底上包括彩色像素阵列的半导体器件; 衬底上的距离像素阵列; 在所述彩色像素阵列和所述距离像素阵列上的导光构件; 在所述导光部件上的红外光截止滤光器，被配置为阻挡红外光; 在所述导光部件上的近红外光滤光器，其被配置为允许近红外光通过; 以及在所述光诱导构件上的RGB滤光器，并且被配置为允许可见光通过。 根据示例性实施例，制造半导体器件的方法可以包括在衬底上形成彩色像素阵列; 在基板上形成距离像素阵列; 在所述彩色像素阵列和所述距离像素阵列上形成导光部件; 在所述感光构件上形成红外光截止滤光器; 在所述导光部件上形成近红外光滤波器; 在所述感光构件上形成RGB滤光器; 并且在红外线截止滤光器和近红外光滤光器上形成多个透镜。