公开(公告)号：US09054210B2

公开(公告)日：2015-06-09

申请号：US13479679

申请日：2012-05-24

申请人： Sang-Jine Park ,  Doo-Sung Yun ,  Bo-Un Yoon ,  Jeong-Nam Han ,  Kee-Sang Kwon ,  Won-Sang Choi

发明人： Sang-Jine Park ,  Doo-Sung Yun ,  Bo-Un Yoon ,  Jeong-Nam Han ,  Kee-Sang Kwon ,  Won-Sang Choi

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/8234 ,  H01L21/285 ,  H01L21/02 ,  H01L29/78 ,  H01L21/768 ,  H01L21/311

CPC分类号： H01L21/823425 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/31116 ,  H01L21/76814 ,  H01L21/76897 ,  H01L21/823475 ,  H01L29/78

摘要： A method of fabricating a semiconductor device, the method including forming on a substrate a transistor that includes a gate electrode and a source and drain region, forming an interlayer insulating film on the transistor, forming a contact hole in the interlayer insulating film to expose a top surface of the source and drain region, and a thin film is formed at an interface between the contact hole and the exposed top surface of the source and drain region. The method further including selectively removing at least a portion of the thin film by performing an etching process in a non-plasma atmosphere, forming an ohmic contact film on the source and drain region where at least a portion of the thin film was selectively removed, and forming a contact plug by filling the contact hole with a conductive material.

摘要翻译： 一种制造半导体器件的方法，所述方法包括在衬底上形成包括栅极和源极和漏极区的晶体管，在所述晶体管上形成层间绝缘膜，在所述层间绝缘膜中形成接触孔以暴露出 源极和漏极区域的顶表面，并且在接触孔和源极和漏极区域的暴露顶表面之间的界面处形成薄膜。 该方法还包括通过在非等离子体气氛中进行蚀刻工艺来选择性地去除薄膜的至少一部分，在选择性地去除薄膜的至少一部分的源区和漏区上形成欧姆接触膜， 以及通过用导电材料填充接触孔来形成接触塞。

公开(公告)号：US09704864B2

公开(公告)日：2017-07-11

申请号：US14746229

申请日：2015-06-22

申请人： Sang-Jine Park ,  Bo-Un Yoon ,  Ha-Young Jeon ,  Yeon-Jin Gil ,  Ji-Won Yun ,  Won-Sang Choi

发明人： Sang-Jine Park ,  Bo-Un Yoon ,  Ha-Young Jeon ,  Yeon-Jin Gil ,  Ji-Won Yun ,  Won-Sang Choi

IPC分类号： H01L21/70 ,  H01L27/092 ,  H01L29/78 ,  H01L27/088 ,  H01L29/165 ,  H01L21/8238

CPC分类号： H01L27/0924 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L29/165 ,  H01L29/7846 ,  H01L29/7848 ,  H01L29/785

摘要： Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.

公开(公告)号：US20160043170A1

公开(公告)日：2016-02-11

申请号：US14746229

申请日：2015-06-22

申请人： Sang-Jine Park ,  Bo-Un Yoon ,  Ha-Young Jeon ,  Yeon-Jin Gil ,  Ji-Won Yun ,  Won-Sang Choi

发明人： Sang-Jine Park ,  Bo-Un Yoon ,  Ha-Young Jeon ,  Yeon-Jin Gil ,  Ji-Won Yun ,  Won-Sang Choi

IPC分类号： H01L29/06 ,  H01L27/092 ,  H01L29/78

CPC分类号： H01L27/0924 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L29/165 ,  H01L29/7846 ,  H01L29/7848 ,  H01L29/785

摘要： Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.

摘要翻译： 提供半导体器件。 半导体器件包括从衬底突出的翅片。 此外，半导体器件包括翅片上的第一和第二栅极结构以及第一和第二栅极结构之间的隔离区域。 隔离区域包括具有不同相应宽度的第一和第二部分。 还提供了形成半导体器件的相关方法。