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    CHEMICAL SUPPLIER, PROCESSING APPARATUS INCLUDING THE CHEMICAL SUPPLIER
    1.
    发明申请
    CHEMICAL SUPPLIER, PROCESSING APPARATUS INCLUDING THE CHEMICAL SUPPLIER 审中-公开
    化学供应商，包括化学供应商的加工设备

    公开(公告)号：US20140231010A1

    公开(公告)日：2014-08-21

    申请号：US14183994

    申请日：2014-02-19

    申请人： Sang-Jine PARK ,  Bo-Un YOON ,  Jeong-Nam HAN ,  Kee-Sang KWON ,  Doo-Sung YUN ,  Won-Sang CHOI

    发明人： Sang-Jine PARK ,  Bo-Un YOON ,  Jeong-Nam HAN ,  Kee-Sang KWON ,  Doo-Sung YUN ,  Won-Sang CHOI

    IPC分类号： H01L21/67

    CPC分类号： H01L21/67075 ,  H01L21/67017 ,  H01L21/6708

    摘要： A chemical supplier includes a chemical reservoir containing a chemical mixture at a room temperature, an inner space of the chemical reservoir being separated from surroundings, a supply line through which the chemical mixture is supplied to a process chamber from the chemical reservoir, an inline heater positioned on the supply line and heating the chemical mixture in the supply line to a process temperature, and a power source driving the chemical mixture to move the chemical mixture toward the process chamber.

    摘要翻译： 化学品供应商包括在室温下含有化学混合物的化学容器，化学容器的内部空间与周围环境分离，供应管线，化学混合物通过该供应管线从化学容器供应到处理室，一体式加热器 定位在供应管线上并将供应管线中的化学混合物加热至处理温度，以及驱动化学混合物以将化学混合物移向处理室的电源。

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20130023100A1

    公开(公告)日：2013-01-24

    申请号：US13479679

    申请日：2012-05-24

    申请人： Sang-Jine PARK ,  Doo-Sung YUN ,  Bo-Un YOON ,  Jeong-Nam HAN ,  Kee-Sang KWON ,  Won-Sang CHOI

    发明人： Sang-Jine PARK ,  Doo-Sung YUN ,  Bo-Un YOON ,  Jeong-Nam HAN ,  Kee-Sang KWON ,  Won-Sang CHOI

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823425 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/31116 ,  H01L21/76814 ,  H01L21/76897 ,  H01L21/823475 ,  H01L29/78

    摘要： A method of fabricating a semiconductor device, the method including forming on a substrate a transistor that includes a gate electrode and a source and drain region, forming an interlayer insulating film on the transistor, forming a contact hole in the interlayer insulating film to expose a top surface of the source and drain region, and a thin film is formed at an interface between the contact hole and the exposed top surface of the source and drain region. The method further including selectively removing at least a portion of the thin film by performing an etching process in a non-plasma atmosphere, forming an ohmic contact film on the source and drain region where at least a portion of the thin film was selectively removed, and forming a contact plug by filling the contact hole with a conductive material.

    摘要翻译： 一种制造半导体器件的方法，所述方法包括在衬底上形成包括栅极和源极和漏极区的晶体管，在所述晶体管上形成层间绝缘膜，在所述层间绝缘膜中形成接触孔以暴露出 源极和漏极区域的顶表面，并且在接触孔和源极和漏极区域的暴露顶表面之间的界面处形成薄膜。 该方法还包括通过在非等离子体气氛中进行蚀刻工艺来选择性地去除薄膜的至少一部分，在选择性地去除薄膜的至少一部分的源区和漏区上形成欧姆接触膜， 以及通过用导电材料填充接触孔来形成接触塞。

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20140042530A1

    公开(公告)日：2014-02-13

    申请号：US13963161

    申请日：2013-08-09

    申请人： Min-Kwon CHO ,  Takayuki GOMI ,  Chan-Ho PARK ,  Nam-Ki CHO ,  Won-Sang CHOI

    发明人： Min-Kwon CHO ,  Takayuki GOMI ,  Chan-Ho PARK ,  Nam-Ki CHO ,  Won-Sang CHOI

    IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/78

    CPC分类号： H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66666 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

    摘要： A semiconductor device includes a substrate including a first region and a second region, a trench-gate transistor in the first region, the trench-gate transistor including a first trench in the substrate, a gate filling at least part of the first trench, and a source in the substrate and on each sidewall of the first trench, a first field diffusion junction in the second region, an interlayer insulating film on the substrate, the interlayer insulating film covering the trench-gate transistor and the first field diffusion junction, a first contact in the first region, the first contact passing through the interlayer insulating film and contacting the source, and a second contact in the second region, the second contact passing through the interlayer insulating film and contacting the first field diffusion junction, the first contact and the second contact having an equal height and including a same material.

    摘要翻译： 一种半导体器件包括：包括第一区域和第二区域的衬底;第一区域中的沟槽栅极晶体管，沟槽栅极晶体管包括衬底中的第一沟槽，填充至少部分第一沟槽的栅极，以及 在第一沟槽的衬底和每个侧壁上的源极，第二区域中的第一场扩散结，衬底上的层间绝缘膜，覆盖沟槽栅晶体管的层间绝缘膜和第一场扩散结， 所述第一接触通过所述层间绝缘膜并接触所述源，所述第二接触在所述第二区域中，所述第二接触通过所述层间绝缘膜并接触所述第一场扩散结，所述第一接触 并且第二触点具有相同的高度并且包括相同的材料。