摘要:
In a fuel cell assembly comprising a plurality of cell each including an electrolyte layer (2), a pair of diffusion electrode layers (3, 4) interposing the electrolyte layer between them, and a pair of flow distribution plates (5) for defining passages (11) for fuel and oxidant fluids that contact the diffusion electrode layers, the fuel cells are arranged on a common plane. Therefore, the vertical dimension of the fuel cell assembly can be minimized, and a fuel cell assembly of favorable electric properties can be achieved. Each flow distribution plate is typically formed with communication passages for communicating fluid passages defined on each side of the electrolyte layer at a prescribed pattern. The communication passages and through holes communicate the fluid passages in such a manner that adjacent fuels cells have opposite polarities.
摘要:
In a fuel cell comprising a tubular casing, an electrolyte layer received in the tubular casing, and a pair of gas diffusion electrodes interposing the electrolyte layer and defining a fuel gas passage and an oxidizing gas passage, respectively, each gas diffusion electrode is formed by stacking a plurality of layers of material therefor, for instance in the axial direction of the casing. Because the gas diffusion layers are formed layer by layer, components can be formed in highly fine patterns so that a highly compact tubular fuel cell can be achieved. Similarly, the dimensions of the various elements of the fuel cell can be controlled in a highly accurate manner. Also, the geometric arrangement can be changed at will in intermediate parts of each gas passage.
摘要:
In a fuel cell comprising a tubular casing, an electrolyte layer received in the tubular casing, and a pair of gas diffusion electrodes interposing the electrolyte layer and defining a fuel gas passage and an oxidizing gas passage, respectively, each gas diffusion electrode is formed by stacking a plurality of layers of material therefor, for instance in the axial direction of the casing. Because the gas diffusion layers are formed layer by layer, components can be formed in highly fine patterns so that a highly compact tubular fuel cell can be achieved. Similarly, the dimensions of the various elements of the fuel cell can be controlled in a highly accurate manner. Also, the geometric arrangement can be changed at will in intermediate parts of each gas passage.
摘要:
A fuel cell contains an electrolyte sheet sandwiched between two electrodes. One or both electrode/electrolyte interfaces includes mesoscopic three-dimensional features in a prescribed pattern. The features increase the surface area-to-volume ratio of the device and can be used as integral channels for directing the flow of reactant gases to the reaction surface area, eliminating the need for channels in sealing plates surrounding the electrodes. The electrolyte can be made by micromachining techniques that allow very precise feature definition. Both selective removal and mold-filling techniques can be used. The fuel cell provides significantly enhanced volumetric power density when compared with conventional fuel cells.
摘要:
While embedded silicon germanium alloy and silicon carbon alloy provide many useful applications, especially for enhancing the mobility of MOSFETs through stress engineering, formation of alloyed silicide on these surfaces degrades device performance. The present invention provides structures and methods for providing unalloyed silicide on such silicon alloy surfaces placed on semiconductor substrates. This enables the formation of low resistance contacts for both mobility enhanced PFETs with embedded SiGe and mobility enhanced NFETs with embedded Si:C on the same semiconductor substrate. Furthermore, this invention provides methods for thick epitaxial silicon alloy, especially thick epitaxial Si:C alloy, above the level of the gate dielectric to increase the stress on the channel on the transistor devices.
摘要:
Disclosed are embodiments of an n-FET structure with silicon carbon S/D regions completely contained inside amorphization regions and with a carbon-free gate electrode. Containing carbon within the amorphization regions, ensures that all of the carbon is substitutional following re-crystallization to maximize the tensile stress imparted on channel region. The gate stack is capped during carbon implantation so the risk of carbon entering the gate stack and degrading the conductivity of the gate polysilicon and/or damaging the gate oxide is essentially eliminated. Thus, the carbon implant regions can be formed deeper. Deeper S/D carbon implants which are completely amorphized and then re-crystallized provide greater tensile stress on the n-FET channel region to further optimize electron mobility. Additionally, the gate electrode is uncapped during the n-type dopant process, so the n-type dopant dose in the gate electrode can be at least great as the dose in the S/D regions.
摘要:
A semiconductor structure including an nFET having a fully silicided gate electrode wherein a new dual stress liner configuration is used to enhance the stress in the channel region that lies beneath the gate electrode is provided. The new dual stress liner configuration includes a first stress liner that has an upper surface that is substantially planar with an upper surface of a fully silicided gate electrode of the nFET. In accordance with the present invention, the first stress liner is not present atop the nFET including the fully silicided gate electrode. Instead, the first stress liner of the present invention partially wraps around, i.e., surrounds the sides of, the nFET with the fully silicided gate electrode. A second stress liner having an opposite polarity as that of the first stress liner (i.e., of an opposite stress type) is located on the upper surface of the first stress liner as well as atop the nFET that contains the fully silicided FET. In accordance with the present invention, the first stress liner is a tensile stress liner and the second stress liner is a compressive stress liner.
摘要:
A semiconductor device and method of manufacture and, more particularly, a semiconductor device having strain films and a method of manufacture. The device includes an embedded SiGeC layer in source and drain regions of an NFET device and an embedded SiGe layer in source and drain regions of a PFET device. The PFET device is subject to compressive strain. The method includes embedding SiGe in source and drain regions of an NFET device and implanting carbon in the embedded SiGe forming an SiGeC layer in the source and drain regions of the NFET device. The SiGeC is melt laser annealed to uniformly distribute the carbon in the SiGeC layer, thereby counteracting a strain generated by the embedded SiGe.
摘要:
A method forms a gate conductor over a substrate, and simultaneously forms spacers on sides of the gate conductor and a gate cap on the top of the gate conductor. Isolation regions are formed in the substrate and the method implants an impurity into exposed regions of the substrate not protected by the gate conductor and the spacers to form source and drain regions. The method deposits a mask over the gate conductor, the spacers, and the source and drain regions. The mask is recessed to a level below a top of the gate conductor but above the source and drain regions, such that the spacers are exposed and the source and drain regions are protected by the mask. With the mask in place, the method then safely removes the spacers and the gate cap, without damaging the source/drain regions or the isolation regions (which are protected by the mask). Next, the method removes the mask and then forms silicide regions on the gate conductor and the source and drain regions.
摘要:
The embodiments of the invention comprise a self-aligned super stressed p-type field effect transistor (PFET). More specifically, a field effect transistor comprises a channel region comprising N-doped material and a gate above the channel region. The field effect transistor also includes a source region on a first side of the channel region and a drain region on a second side of the channel region opposite the first side. The source and drain regions each comprise silicon germanium, wherein the silicon germanium has structural indicia of epitaxial growth.