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    Method of manufacturing a memory device having improved erasing characteristics
    1.
    发明授权
    Method of manufacturing a memory device having improved erasing characteristics 有权
    具有改善擦除特性的存储器件的制造方法

    公开(公告)号：US07402492B2

    公开(公告)日：2008-07-22

    申请号：US11385642

    申请日：2006-03-21

    申请人： Sang-hun Jeon ,  Kyu-sik Kim ,  Chung-woo Kim ,  Sung-ho Park ,  Yo-sep Min ,  Jeong-hee Han

    发明人： Sang-hun Jeon ,  Kyu-sik Kim ,  Chung-woo Kim ,  Sung-ho Park ,  Yo-sep Min ,  Jeong-hee Han

    IPC分类号： H01L21/336

    CPC分类号： H01L21/324 ,  H01L21/28273 ,  H01L21/28282

    摘要： In a method of manufacturing a memory device having improved erasing characteristics, the method includes sequentially forming a tunneling oxide layer, a charge storing layer, and a blocking oxide layer on a semiconductor substrate; annealing the semiconductor substrate including the tunneling oxide layer, the charge storing layer, and the blocking oxide layer under a gas atmosphere so that the blocking oxide layer has a negative fixed oxide charge; forming a gate electrode on the blocking oxide layer with the negative fixed oxide charge and etching the tunneling oxide layer, the charge storing layer, and the blocking oxide layer to form a gate structure; and forming a first doped region and a second doped region in the semiconductor substrate at sides of the gate structure by doping the semiconductor substrate with a dopant.

    摘要翻译： 在制造具有改善的擦除特性的存储器件的方法中，该方法包括在半导体衬底上依次形成隧穿氧化物层，电荷存储层和阻挡氧化物层; 在气体气氛下退火包括隧道氧化物层，电荷存储层和阻挡氧化物层的半导体衬底，使得阻挡氧化物层具有负的固定氧化物电荷; 在阻挡氧化物层上形成具有负固定氧化物电荷的栅电极，蚀刻隧道氧化物层，电荷存储层和阻挡氧化物层以形成栅极结构; 以及通过用掺杂剂掺杂半导体衬底，在栅极结构的侧面在半导体衬底中形成第一掺杂区和第二掺杂区。

    Method of manufacturing a memory device having improved erasing characteristics
    2.
    发明申请
    Method of manufacturing a memory device having improved erasing characteristics 有权
    具有改善擦除特性的存储器件的制造方法

    公开(公告)号：US20060211205A1

    公开(公告)日：2006-09-21

    申请号：US11385642

    申请日：2006-03-21

    申请人： Sang-hun Jeon ,  Kyu-sik Kim ,  Chung-woo Kim ,  Sung-ho Park ,  Yo-sep Min ,  Jeong-hee Han

    发明人： Sang-hun Jeon ,  Kyu-sik Kim ,  Chung-woo Kim ,  Sung-ho Park ,  Yo-sep Min ,  Jeong-hee Han

    IPC分类号： H01L21/336

    CPC分类号： H01L21/324 ,  H01L21/28273 ,  H01L21/28282

    摘要： In a method of manufacturing a memory device having improved erasing characteristics, the method includes sequentially forming a tunneling oxide layer, a charge storing layer, and a blocking oxide layer on a semiconductor substrate; annealing the semiconductor substrate including the tunneling oxide layer, the charge storing layer, and the blocking oxide layer under a gas atmosphere so that the blocking oxide layer has a negative fixed oxide charge; forming a gate electrode on the blocking oxide layer with the negative fixed oxide charge and etching the tunneling oxide layer, the charge storing layer, and the blocking oxide layer to form a gate structure; and forming a first doped region and a second doped region in the semiconductor substrate at sides of the gate structure by doping the semiconductor substrate with a dopant.

    摘要翻译： 在制造具有改善的擦除特性的存储器件的方法中，该方法包括在半导体衬底上依次形成隧穿氧化物层，电荷存储层和阻挡氧化物层; 在气体气氛下退火包括隧道氧化物层，电荷存储层和阻挡氧化物层的半导体衬底，使得阻挡氧化物层具有负的固定氧化物电荷; 在阻挡氧化物层上形成具有负固定氧化物电荷的栅电极，蚀刻隧道氧化物层，电荷存储层和阻挡氧化物层以形成栅极结构; 以及通过用掺杂剂掺杂半导体衬底，在栅极结构的侧面在半导体衬底中形成第一掺杂区和第二掺杂区。

    Image sensor using light-sensitive device and method of operating the image sensor
    6.
    发明申请
    Image sensor using light-sensitive device and method of operating the image sensor 有权
    使用感光装置的图像传感器和操作图像传感器的方法

    公开(公告)号：US20110242384A1

    公开(公告)日：2011-10-06

    申请号：US12923924

    申请日：2010-10-14

    申请人： Ji-hyun Hur ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

    发明人： Ji-hyun Hur ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

    IPC分类号： H04N5/335 ,  H01L27/146

    CPC分类号： H01L27/14601 ,  H01L27/14645 ,  H01L31/0264

    摘要： Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of light-sensing cells wherein each of the light-sensing cells includes a light-sensitive oxide semiconductor layer that forms a channel region of an oxide semiconductor transistor. Electronic characteristics of the light-sensitive oxide semiconductor layer vary according to an amount of light irradiated onto the light-sensitive oxide semiconductor layer. Each of the light-sensing cells constitutes a single unit color pixel.

    摘要翻译： 提供了使用感光氧化物半导体材料作为感光装置的图像传感器和操作用于获取图像传感器中的入射光的RGB值的图像传感器的方法，图像传感器包括多个光的阵列 其中每个感光单元包括形成氧化物半导体晶体管的沟道区的光敏氧化物半导体层。 光敏氧化物半导体层的电子特性根据照射到光敏氧化物半导体层上的光量而变化。 每个感光单元构成单个单色彩像素。

    Transistors, methods of manufacturing the same, and electronic devices including transistors
    7.
    发明授权
    Transistors, methods of manufacturing the same, and electronic devices including transistors 有权
    晶体管及其制造方法以及包括晶体管的电子器件

    公开(公告)号：US09117727B2

    公开(公告)日：2015-08-25

    申请号：US13099806

    申请日：2011-05-03

    申请人： I-hun Song ,  Yin Huaxiang ,  Sang-hun Jeon ,  Sung-ho Park

    发明人： I-hun Song ,  Yin Huaxiang ,  Sang-hun Jeon ,  Sung-ho Park

    IPC分类号： H01L27/14 ,  H01L27/00 ,  H01L27/146

    CPC分类号： H01L27/14681 ,  H01L27/14692

    摘要： Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times.

    摘要翻译： 示例性实施例公开了晶体管，其制造方法以及包括晶体管的电子器件。 晶体管的有源层可以包括具有不同能带隙的多个材料层（氧化物层）。 有源层可以包括沟道层和感光层。 感光层可以具有单层或多层结构。 当感光层具有多层结构时，感光层可以包括依次层叠在沟道层的表面上的第一材料层和第二材料层。 第一层和第二层可以交替堆叠一次或多次。

    Transistors and methods of manufacturing the same
    10.
    发明申请
    Transistors and methods of manufacturing the same 有权
    晶体管及其制造方法

    公开(公告)号：US20110168993A1

    公开(公告)日：2011-07-14

    申请号：US12801500

    申请日：2010-06-11

    申请人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

    发明人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

    IPC分类号： H01L29/22 ,  H01L21/336 ,  H01L29/20

    CPC分类号： H01L29/7869

    摘要： Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.

    摘要翻译： 晶体管及其制造方法。 晶体管可以是具有自对准顶栅极结构的氧化物薄膜晶体管（TFT）。 晶体管可以包括从栅电极的两侧延伸的沟道区和栅电极之间的栅极绝缘层。 栅绝缘层可以覆盖源区和漏区的至少一部分。