公开(公告)号：US20090168217A1

公开(公告)日：2009-07-02

申请号：US12006323

申请日：2007-12-31

申请人： Satoru Araki ,  Robert S. Beach ,  Ying Hong ,  David J. Seagle

发明人： Satoru Araki ,  Robert S. Beach ,  Ying Hong ,  David J. Seagle

IPC分类号： G11B27/36

CPC分类号： G11B5/455

摘要： A test-device system and method for deconvoluting measurements of effects of a sensor-width definition process from measurements of effects of a sensor-stripe-height-definition process in a manufacture of a magnetic sensor. The test-device system comprises a first test device for generating data to characterize a sensor-width-definition process. The test-device system also comprises a second test device for generating data to characterize a sensor-stripe-height-definition process. The test-device system allows independent characterization of a sensor-width parameter and a sensor-stripe-height parameter.

摘要翻译： 一种测试装置系统和方法，用于对传感器宽度定义处理的影响进行解卷积测量，所述测量来自传感器条纹高度清晰度过程在制造磁传感器中的影响。 测试设备系统包括用于产生数据以表征传感器宽度定义过程的第一测试设备。 测试设备系统还包括用于生成数据以表征传感器条纹高度清晰度过程的第二测试设备。 测试设备系统允许对传感器宽度参数和传感器条纹高度参数进行独立表征。

公开(公告)号：US07852072B2

公开(公告)日：2010-12-14

申请号：US12006323

申请日：2007-12-31

申请人： Satoru Araki ,  Robert S. Beach ,  Ying Hong ,  David J. Seagle

发明人： Satoru Araki ,  Robert S. Beach ,  Ying Hong ,  David J. Seagle

IPC分类号： G01R33/12

CPC分类号： G11B5/455

摘要： A test-device system and method for deconvoluting measurements of effects of a sensor-width definition process from measurements of effects of a sensor-stripe-height-definition process in a manufacture of a magnetic sensor. The test-device system comprises a first test device for generating data to characterize a sensor-width-definition process. The test-device system also comprises a second test device for generating data to characterize a sensor-stripe-height-definition process. The test-device system allows independent characterization of a sensor-width parameter and a sensor-stripe-height parameter.

摘要翻译： 一种测试装置系统和方法，用于对传感器宽度定义处理的影响进行解卷积测量，所述测量来自传感器条纹高度清晰度过程在制造磁传感器中的影响。 测试设备系统包括用于产生数据以表征传感器宽度定义过程的第一测试设备。 测试设备系统还包括用于生成数据以表征传感器条纹高度清晰度过程的第二测试设备。 测试设备系统允许对传感器宽度参数和传感器条纹高度参数进行独立表征。

公开(公告)号：US07863911B2

公开(公告)日：2011-01-04

申请号：US12006322

申请日：2007-12-31

申请人： Ying Hong ,  Wipul P. Jayasekara ,  Daniele Mauri ,  David J. Seagle

发明人： Ying Hong ,  Wipul P. Jayasekara ,  Daniele Mauri ,  David J. Seagle

IPC分类号： G01R27/08 ,  G01R31/08 ,  G01R31/02

CPC分类号： G11B5/3166 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3173 ,  G11B5/3906 ,  G11B5/3909

摘要： A combined manufacturable wafer and test device for measuring a tunneling-magnetoresistance property of a tunneling-magnetoresistance, sensor-layer structure. The combined manufacturable wafer and test device comprises a tunneling-magnetoresistance, sensor-layer structure disposed on a substrate. The combined manufacturable wafer and test device also comprises a plurality of partially fabricated tunneling-magnetoresistance sensors; at least one of the partially fabricated tunneling-magnetoresistance sensors is disposed at one of a plurality of first locations. The test device is disposed on the substrate at a second location different from the plurality of first locations. The test device allows measurement of the tunneling-magnetoresistance property of the tunneling-magnetoresistance, sensor-layer structure using a current-in-plane-tunneling technique.

摘要翻译： 用于测量隧道 - 磁阻，传感器层结构的隧道 - 磁阻特性的组合制造晶片和测试装置。 组合的可制造晶片和测试装置包括设置在基板上的隧道 - 磁阻，传感器层结构。 组合的可制造晶片和测试装置还包括多个部分制造的隧道 - 磁阻传感器; 部分制造的隧道 - 磁阻传感器中的至少一个设置在多个第一位置中的一个位置。 测试装置在不同于多个第一位置的第二位置处设置在基板上。 测试装置允许使用平面内隧道技术测量隧道 - 磁阻，传感器层结构的隧道 - 磁阻特性。

公开(公告)号：US09275661B2

公开(公告)日：2016-03-01

申请号：US11703383

申请日：2007-02-06

申请人： Ying Hong ,  David J. Seagle

发明人： Ying Hong ,  David J. Seagle

IPC分类号： G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/31

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/3903 ,  Y10T29/49021

摘要： A magnetic head including a CPP read head sensor. The CPP sensor includes a tunnel barrier layer. At least one portion of ELG material is coplanar with the tunnel barrier layer.

摘要翻译： 包括CPP读头传感器的磁头。 CPP传感器包括隧道势垒层。 ELG材料的至少一部分与隧道势垒层共面。

公开(公告)号：US20090168254A1

公开(公告)日：2009-07-02

申请号：US12006322

申请日：2007-12-31

申请人： Ying Hong ,  Wipul P. Jayasekara ,  Daniele Mauri ,  David J. Seagle

发明人： Ying Hong ,  Wipul P. Jayasekara ,  Daniele Mauri ,  David J. Seagle

IPC分类号： G11B5/33

CPC分类号： G11B5/3166 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3173 ,  G11B5/3906 ,  G11B5/3909

摘要： A combined manufacturable wafer and test device for measuring a tunneling-magnetoresistance property of a tunneling-magnetoresistance, sensor-layer structure. The combined manufacturable wafer and test device comprises a tunneling-magnetoresistance, sensor-layer structure disposed on a substrate. The combined manufacturable wafer and test device also comprises a plurality of partially fabricated tunneling-magnetoresistance sensors; at least one of the partially fabricated tunneling-magnetoresistance sensors is disposed at one of a plurality of first locations. The test device is disposed on the substrate at a second location different from the plurality of first locations. The test device allows measurement of the tunneling-magnetoresistance property of the tunneling-magnetoresistance, sensor-layer structure using a current-in-plane-tunneling technique.

摘要翻译： 用于测量隧道 - 磁阻，传感器层结构的隧道 - 磁阻特性的组合制造晶片和测试装置。 组合的可制造晶片和测试装置包括设置在基板上的隧道 - 磁阻，传感器层结构。 组合的可制造晶片和测试装置还包括多个部分制造的隧道 - 磁阻传感器; 部分制造的隧道 - 磁阻传感器中的至少一个设置在多个第一位置中的一个位置。 测试装置在不同于多个第一位置的第二位置处设置在基板上。 测试装置允许使用平面内隧道技术测量隧道 - 磁阻，传感器层结构的隧道 - 磁阻特性。

公开(公告)号：US07640650B2

公开(公告)日：2010-01-05

申请号：US11965867

申请日：2007-12-28

申请人： Satoru Araki ,  Ying Hong ,  Wipul Jayasekara ,  Ming Jiang

发明人： Satoru Araki ,  Ying Hong ,  Wipul Jayasekara ,  Ming Jiang

IPC分类号： G11B5/127 ,  H04R31/00 ,  G11B5/33

CPC分类号： G11B5/398 ,  G01R33/098 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method of making a magnetoresistive sensor includes defining a track width of a magnetoresistive element stack of the sensor. Further, processes of the method enable depositing of hard magnetic bias material on each side of the stack. These processes may permit both milling of excess depositions of the material outside of regions where the hard magnetic bias material is desired via use of a photoresist and making the material have a planar surface via chemical mechanical polishing, which also removes the material on top of the stack. The method includes removing excess material outside of the photoresist, wherein the excess material includes part of the hard bias layer, while a portion of the hard bias layer remains directly above the MR sensor stack.

摘要翻译： 制造磁阻传感器的方法包括限定传感器的磁阻元件堆的轨道宽度。 此外，该方法的处理使得能够在堆叠的每一侧上沉积硬磁偏置材料。 这些工艺可以允许通过使用光致抗蚀剂来研磨在需要硬磁偏置材料的区域之外的材料的过剩沉积，并且通过化学机械抛光使材料具有平坦表面，这也去除了 堆栈 该方法包括去除光致抗蚀剂外部的多余材料，其中多余的材料包括硬​​偏压层的一部分，而一部分硬偏压层直接保留在MR传感器堆叠的正上方。

公开(公告)号：US20090168253A1

公开(公告)日：2009-07-02

申请号：US11965867

申请日：2007-12-28

申请人： Satoru Araki ,  Ying Hong ,  Wipul Jayasekara ,  Ming Jiang

发明人： Satoru Araki ,  Ying Hong ,  Wipul Jayasekara ,  Ming Jiang

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  G01R33/098 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method of making a magnetoresistive sensor includes defining a track width of a magnetoresistive element stack of the sensor. Further, processes of the method enable depositing of hard magnetic bias material on each side of the stack. These processes may permit both milling of excess depositions of the material outside of regions where the hard magnetic bias material is desired via use of a photoresist and making the material have a planar surface via chemical mechanical polishing, which also removes the material on top of the stack.

摘要翻译： 制造磁阻传感器的方法包括限定传感器的磁阻元件堆的轨道宽度。 此外，该方法的处理使得能够在堆叠的每一侧上沉积硬磁偏置材料。 这些工艺可以允许通过使用光致抗蚀剂来研磨在需要硬磁偏置材料的区域之外的材料的过剩沉积，并且通过化学机械抛光使材料具有平坦表面，这也去除了 堆栈

公开(公告)号：US20090296285A1

公开(公告)日：2009-12-03

申请号：US12130389

申请日：2008-05-30

申请人： Satoru Araki ,  Ying Hong ,  Edward Hin Pong Lee ,  Tsann Lin ,  David John Seagle

发明人： Satoru Araki ,  Ying Hong ,  Edward Hin Pong Lee ,  Tsann Lin ,  David John Seagle

IPC分类号： G11B5/33 ,  G01R33/18 ,  H01L21/00 ,  B44C1/22

CPC分类号： G01R33/18 ,  G01R33/0023 ,  G11B5/3929

摘要： A system in one approach includes a sensor stack formed of a plurality of thin film layers; a shunt formed of at least some of the same layers as the sensor stack, the shunt being spaced from the sensor stack; a first lead coupled to the sensor stack and the shunt; and a second lead coupled to the sensor stack and the shunt. A method in one embodiment includes forming a plurality of thin film layers; removing a portion of the thin film layers for defining at least a portion of a sensor stack and at least a portion of a shunt spaced front the sensor stack; forming a first lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt and a second lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt. Additional systems and methods are also presented.

摘要翻译： 一种方法的系统包括由多个薄膜层形成的传感器堆叠; 由与所述传感器堆叠的至少一些相同层形成的分流器，所述分流器与所述传感器堆叠间隔开; 耦合到传感器堆叠和分流器的第一引线; 以及耦合到传感器堆叠和分流器的第二引线。 一个实施例中的方法包括形成多个薄膜层; 去除用于限定传感器堆叠的至少一部分的薄膜层的一部分和与传感器堆叠间隔开的分流器的至少一部分; 形成耦合到传感器堆叠的至少一部分和分流器的至少一部分的第一引线和耦合到传感器堆叠的至少一部分和分流器的至少一部分的第二引线。 还介绍了其他系统和方法。

公开(公告)号：US07530158B2

公开(公告)日：2009-05-12

申请号：US11110330

申请日：2005-04-19

申请人： Satoru Araki ,  Robert Stanley Beach ,  Ying Hong ,  Thomas L. Leong ,  Timothy J. Minvielle ,  Howard Gordon Zolla

发明人： Satoru Araki ,  Robert Stanley Beach ,  Ying Hong ,  Thomas L. Leong ,  Timothy J. Minvielle ,  Howard Gordon Zolla

IPC分类号： G11B5/33

CPC分类号： G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49041

摘要： A method is disclosed for fabricating a CPP read head for a magnetic disk drive having an electrical isolation layer. The method includes providing a first shield layer, depositing a sensor stack on the first shield layer, a CMP stop layer is deposited on the sensor stack, and a release layer is deposited a on the CMP stop layer. Photoresist material containing Si is deposited on the release layer, and the photoresist material is then patterned and then oxidized by Reactive Ion Etching to form a high temperature photomask. The electrical isolation layer is then deposited to surround the sensor stack using a high temperature deposition process. The read head is then continued as either an in-stack bias sensor with ‘draped shield’ variation, or a hard bias stabilization variation.

摘要翻译： 公开了一种用于制造具有电隔离层的磁盘驱动器的CPP读取头的方法。 该方法包括提供第一屏蔽层，在第一屏蔽层上沉积传感器堆叠，CMP阻挡层沉积在传感器堆叠上，并且释放层沉积在CMP停止层上。 含有Si的光致抗蚀剂材料沉积在剥离层上，然后将光致抗蚀剂材料图案化，然后通过反应离子蚀刻被氧化以形成高温光掩模。 然后使用高温沉积工艺沉积电隔离层以围绕传感器堆叠。 然后，读头继续作为具有“悬垂屏蔽”变化的堆叠内偏压传感器或硬偏压稳定变化。

公开(公告)号：US20060231930A1

公开(公告)日：2006-10-19

申请号：US11110090

申请日：2005-04-19

申请人： Satoru Araki ,  Robert Beach ,  Ying Hong ,  Thomas Leong ,  Timothy Minvielle ,  Howard Zolla

发明人： Satoru Araki ,  Robert Beach ,  Ying Hong ,  Thomas Leong ,  Timothy Minvielle ,  Howard Zolla

IPC分类号： H01L23/58

CPC分类号： G11B5/3163 ,  G11B5/3133 ,  G11B5/3967

摘要： A temperature resistant photomask is disclosed which is made from photoresist containing Si, which is exposed to oxygen during Reactive Ion Etching. The temperature resistant photomask may include a secondary mask layer, which may also acts as a release layer, and which may include spin-on polymide. The photoresist containing Si may be exposed to oxygen during Reactive Ion Etching by introducing oxygen and carbon dioxide.

摘要翻译： 公开了一种耐温光掩模，其由含有Si的光致抗蚀剂制成，其在反应离子蚀刻期间暴露于氧气。 耐温光掩模可以包括二次掩模层，其也可以用作剥离层，并且其可以包括旋涂聚酰亚胺。 含有Si的光致抗蚀剂可通过引入氧和二氧化碳在反应离子蚀刻期间暴露于氧气。