公开(公告)号：US07640650B2

公开(公告)日：2010-01-05

申请号：US11965867

申请日：2007-12-28

申请人： Satoru Araki ,  Ying Hong ,  Wipul Jayasekara ,  Ming Jiang

发明人： Satoru Araki ,  Ying Hong ,  Wipul Jayasekara ,  Ming Jiang

IPC分类号： G11B5/127 ,  H04R31/00 ,  G11B5/33

CPC分类号： G11B5/398 ,  G01R33/098 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method of making a magnetoresistive sensor includes defining a track width of a magnetoresistive element stack of the sensor. Further, processes of the method enable depositing of hard magnetic bias material on each side of the stack. These processes may permit both milling of excess depositions of the material outside of regions where the hard magnetic bias material is desired via use of a photoresist and making the material have a planar surface via chemical mechanical polishing, which also removes the material on top of the stack. The method includes removing excess material outside of the photoresist, wherein the excess material includes part of the hard bias layer, while a portion of the hard bias layer remains directly above the MR sensor stack.

摘要翻译： 制造磁阻传感器的方法包括限定传感器的磁阻元件堆的轨道宽度。 此外，该方法的处理使得能够在堆叠的每一侧上沉积硬磁偏置材料。 这些工艺可以允许通过使用光致抗蚀剂来研磨在需要硬磁偏置材料的区域之外的材料的过剩沉积，并且通过化学机械抛光使材料具有平坦表面，这也去除了 堆栈 该方法包括去除光致抗蚀剂外部的多余材料，其中多余的材料包括硬​​偏压层的一部分，而一部分硬偏压层直接保留在MR传感器堆叠的正上方。

公开(公告)号：US20090168253A1

公开(公告)日：2009-07-02

申请号：US11965867

申请日：2007-12-28

申请人： Satoru Araki ,  Ying Hong ,  Wipul Jayasekara ,  Ming Jiang

发明人： Satoru Araki ,  Ying Hong ,  Wipul Jayasekara ,  Ming Jiang

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  G01R33/098 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method of making a magnetoresistive sensor includes defining a track width of a magnetoresistive element stack of the sensor. Further, processes of the method enable depositing of hard magnetic bias material on each side of the stack. These processes may permit both milling of excess depositions of the material outside of regions where the hard magnetic bias material is desired via use of a photoresist and making the material have a planar surface via chemical mechanical polishing, which also removes the material on top of the stack.

摘要翻译： 制造磁阻传感器的方法包括限定传感器的磁阻元件堆的轨道宽度。 此外，该方法的处理使得能够在堆叠的每一侧上沉积硬磁偏置材料。 这些工艺可以允许通过使用光致抗蚀剂来研磨在需要硬磁偏置材料的区域之外的材料的过剩沉积，并且通过化学机械抛光使材料具有平坦表面，这也去除了 堆栈

公开(公告)号：US20060256482A1

公开(公告)日：2006-11-16

申请号：US11126508

申请日：2005-05-10

申请人： Satoru Araki ,  Robert Beach ,  Marie-Claire Cyrille ,  Wipul Jayasekara ,  Quang Le ,  Jui-Lung Li ,  David Seagle ,  Howard Zolla

发明人： Satoru Araki ,  Robert Beach ,  Marie-Claire Cyrille ,  Wipul Jayasekara ,  Quang Le ,  Jui-Lung Li ,  David Seagle ,  Howard Zolla

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G11B5/112 ,  G11B5/3169 ,  G11B5/3906 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

公开(公告)号：US20050269288A1

公开(公告)日：2005-12-08

申请号：US11200757

申请日：2005-08-09

申请人： Marie-Claire Cyrille ,  Ying Hong ,  Wipul Jayasekara

发明人： Marie-Claire Cyrille ,  Ying Hong ,  Wipul Jayasekara

IPC分类号： G11B5/31 ,  G11B5/39 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  G11B5/127 ,  G11B5/33 ,  H04R31/00

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01J2237/3114 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49046

摘要： A method for constructing a magnetoresistive sensor which eliminates all redeposited material (redep) from the sides of the sensor. The method involves forming a mask over a plurality of sensor layers, and then performing an ion mill at an angle that is nearly normal to the surface of the sensor layers. A second (glancing) ion mill is then performed at a larger angle with respect to the normal. The first ion mill may be 0-30 degrees with respect to normal, whereas the second ion mill can be 50-89 degrees with respect to normal. The first ion mill is performed with a larger bias voltage than the second ion mill. The higher bias voltage of the first ion mill provides a well collimated ion beam to form straight vertical side walls. The lower bias voltage of the second ion mill prevent damage to the sensor layers during the removal of redep from the sides of the sensor.

摘要翻译： 一种用于构造磁阻传感器的方法，其从传感器的侧面消除所有再沉积的材料（重新进行）。 该方法包括在多个传感器层上形成掩模，然后以与传感器层的表面几乎垂直的角度执行离子磨。 然后相对于法线以较大的角度执行第二（扫视）离子磨。 第一离子磨可相对于正常为0-30度，而第二离子磨可相对于正常为50-89度。 第一离子磨机以比第二离子磨机更大的偏压进行。 第一离子磨的较高的偏置电压提供了准直的离子束以形成直立的垂直侧壁。 第二离子磨的偏置电压较低可以防止传感器层从传感器的侧面移除重新进行检测。

公开(公告)号：US20070081279A1

公开(公告)日：2007-04-12

申请号：US11246720

申请日：2005-10-06

申请人： Ying Hong ,  Wipul Jayasekara

发明人： Ying Hong ,  Wipul Jayasekara

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3906

摘要： A current perpendicular to plane (CPP) sensor and method of manufacturing such a sensor that prevents current shunting at the sides of the barrier/spacer layer due to redeposited material. A first ion mill is performed to remove at least the free layer. A quick glancing ion mill can be performed to remove the small amount of redep that may have accumulated on the sides of the free layer and barrier/spacer layer. Then an insulation layer is deposited to protect the sides of the free layer/barrier layer during subsequent manufacturing which can include further ion milling to define the rest of the sensor and another glancing ion mill to remove the redep formed by the further ion milling. This results in a sensor having no current shunting at the sides of the sensor and having no damage to the sensor layers.

摘要翻译： 垂直于平面（CPP）传感器的电流和制造这种传感器的方法，其防止由于再沉积材料在阻挡层/间隔层的侧面的电流分流。 执行第一离子研磨以去除至少自由层。 可以进行快速扫查离子磨，以除去可能积聚在自由层和阻挡层/间隔层的侧面上的少量重排物。 然后沉积绝缘层以在随后的制造期间保护自由层/阻挡层的侧面，其可以包括进一步的离子铣削以限定传感器的其余部分和另一个扫掠离子磨机以移除由进一步的离子铣削形成的重复。 这导致传感器在传感器的侧面没有电流分流并且不会损坏传感器层。

公开(公告)号：US20070028441A1

公开(公告)日：2007-02-08

申请号：US11197957

申请日：2005-08-05

申请人： Marie-Claire Cyrille ,  Ying Hong ,  Wipul Jayasekara

发明人： Marie-Claire Cyrille ,  Ying Hong ,  Wipul Jayasekara

IPC分类号： C23C14/32

CPC分类号： H01F41/308 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/3268 ,  Y10T29/49032 ,  Y10T29/49044

摘要： A method for fabricating a read head sensor for a magnetic disk drive is presented. The method includes providing a layered wafer stack to be shaped, where the layered wafer stack includes a free layer, a barrier layer and a pinned layer. A single- or multi-layered photoresist mask is formed upon the layered wafer stack to be shaped. A material removal source is provided and used to perform a partial depth material removal within a partial depth material removal range which extends from the free layer to within the pinned layer to a partial depth material removal endpoint. In various embodiments, this depth endpoint lies at or within the barrier layer or within but not through the pinned layer.

摘要翻译： 提出了一种用于制造用于磁盘驱动器的读取头传感器的方法。 该方法包括提供待成形的层状晶片叠层，其中层状晶片堆叠包括自由层，阻挡层和钉扎层。 单层或多层光刻胶掩模形成在待成形的层状晶片叠层上。 提供材料去除源并用于在部分深度材料去除范围内执行部分深度材料去除，该部分深度材料去除范围从自由层延伸到钉扎层内至部分深度材料去除端点。 在各种实施例中，该深度端点位于或在​​阻挡层内或内部但不穿过被钉扎层。

公开(公告)号：US20080020240A1

公开(公告)日：2008-01-24

申请号：US11890868

申请日：2007-08-07

申请人： Robert Fontana ,  Ying Hong ,  Wipul Jayasekara ,  Howard Zolla

发明人： Robert Fontana ,  Ying Hong ,  Wipul Jayasekara ,  Howard Zolla

IPC分类号： G11B5/33 ,  B05D5/12 ,  C23F1/04

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T428/1171

摘要： A method is presented for fabricating a CPP read head having a CPP read head sensor and a hard bias layer which includes forming a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material are deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias material is then deposited on the regions of sensor material and fast-milling dielectric material to form caps on each of these regions. The caps of hard bias material and the masking material are then removed from each of these regions.

摘要翻译： 提出了一种用于制造具有CPP读取头传感器和硬偏置层的CPP读取头的方法，该CPP读取头包括在传感器材料区域中形成传感器材料条，以及将快速研磨电介质材料的条带放置在第一和第二快速接头中， 研磨与传感器材料区域相邻的介电材料区域。 保护层和掩蔽材料层沉积在传感器材料条和快速研磨电介质材料条上，以提供掩蔽区域和暴露区域。 提供成形源，例如离子铣削源，其形成暴露的区域。 然后将硬偏置材料沉积在传感器材料和快速研磨电介质材料的区域上，以在这些区域中的每一个上形成盖。 然后从这些区域中的每一个去除硬偏置材料的盖子和掩模材料。

公开(公告)号：US20070188939A1

公开(公告)日：2007-08-16

申请号：US11352491

申请日：2006-02-10

申请人： Robert Beach ,  Wipul Jayasekara ,  Vladimir Nikitin

发明人： Robert Beach ,  Wipul Jayasekara ,  Vladimir Nikitin

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912 ,  G11B5/40

摘要： In a CPP MR device such as a tunnel magnetoresistive (TMR) device, shoulders that have a magnetic moment that is matched to the magnetic moments of the free layer extend between the free layer and the S2 shield to provide an electrical path from one shoulder, through the shield, to the other shoulder for dissipating edge charges. Thus, a CPP MR device may include a seed stack, a pinned stack on the seed stack, and a tunnel barrier on the pinned stack. A free stack may be on the tunnel barrier, and the free stack can include a free sublayer separated from a magnetic shield and a path for dissipating edge charges in the free stack through the magnetic shield.

摘要翻译： 在诸如隧道磁阻（TMR）器件的CPP MR器件中，具有与自由层的磁矩匹配的磁矩的肩部在自由层和S 2屏蔽之间延伸以提供从一个肩部 ，通过屏蔽，到另一肩，消散边缘电荷。 因此，CPP MR装置可以包括种子堆叠，种子堆叠上的钉扎堆叠以及钉扎堆叠上的隧道势垒。 自由堆叠可以在隧道屏障上，并且自由堆叠可以包括与磁屏蔽分离的自由子层和用于通过磁屏蔽消散自由堆叠中的边缘电荷的路径。

公开(公告)号：US07123455B2

公开(公告)日：2006-10-17

申请号：US10622033

申请日：2003-07-16

申请人： Wipul Jayasekara

发明人： Wipul Jayasekara

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A magnetic tunnel junction (MTJ) sensor in which the free layer longitudinal biasing elements are coupled, without insulation, to the free layer outside of the MTJ stack to provide reliable non-shunting MTJ free layer stabilization without extremely thin dielectric layers. In one embodiment, hard magnetic (HM) layers are disposed in contact with the free layer outside of and separated from the MTJ stack active region by a thick dielectric layer. In another embodiment, antiferromagnetic (AFM) bias layers are disposed in contact with the free layer outside of and separated from the MTJ stack active region by a thick dielectric layer. In other embodiments, nonconductive HM layers are disposed either in contact with the free layer outside of the MTJ stack active region and/or in abutting contact with the MTJ stack active region.

摘要翻译： 一种磁性隧道结（MTJ）传感器，其中自由层纵向偏置元件无需绝缘地连接到MTJ堆叠之外的自由层，以提供可靠的非分流MTJ自由层稳定性，而无需极薄的电介质层。 在一个实施例中，硬磁（HM）层被设置成与厚电介质层在MTJ叠层有源区之外的自由层接触。 在另一个实施例中，反铁磁（AFM）偏置层设置成与厚电介质层在MTJ堆叠有源区之外的自由层接触。 在其它实施例中，非导电HM层设置为与MTJ堆叠有源区域外部的自由层接触和/或与MTJ堆叠有源区域邻接接触。

公开(公告)号：US20060132969A1

公开(公告)日：2006-06-22

申请号：US11301986

申请日：2005-12-12

申请人： Wipul Jayasekara

发明人： Wipul Jayasekara

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  C23F4/00 ,  G11B5/3106 ,  G11B5/3163 ,  G11B5/332 ,  G11B5/3903 ,  G11B2005/3996

摘要： A magnetic head, comprising a read sensor formed in a central region, the read sensor including a free layer; an etch-stop layer formed over the free layer; and a capping layer formed over the free layer.

摘要翻译： 一种磁头，包括形成在中央区域的读取传感器，所述读取传感器包括自由层; 形成在自由层上的蚀刻停止层; 以及形成在自由层上的覆盖层。