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    Toner for development of electrostatic image and method of fixing employing the same
    1.
    发明授权
    Toner for development of electrostatic image and method of fixing employing the same 失效
    用于静电图像显影的调色剂和使用其的定影方法

    公开(公告)号：US4883734A

    公开(公告)日：1989-11-28

    申请号：US162801

    申请日：1988-03-01

    申请人： Satoru Ikeuchi ,  Mitutaka Arai ,  Yuki Okuyama ,  Hideki Yuri ,  Tomoo Shiohara ,  Yasuhiko Oyama

    发明人： Satoru Ikeuchi ,  Mitutaka Arai ,  Yuki Okuyama ,  Hideki Yuri ,  Tomoo Shiohara ,  Yasuhiko Oyama

    IPC分类号： G03G9/087

    CPC分类号： G03G9/08726

    摘要： Disclosed are a toner for development of electrostatic image, comprising as the main component a resin obtained by allowing a polymer containing a polymer component with low molecular weight and a polymer component with high molecular weight, at least the polymer component with low molecular weight containing a carboxylic acid component, to react with a polyvalent metal compound, and a method of fixing a toner image employing the toner described above.According to the present invention, there can be provided a toner for development of electrostatic image which has more improved fixability without lowering the anti-off-set property already improved, and also which can be prepared with good reproducibility without causing gelation to occur although the metal compound may be formulated therein, and can be improved in fixability without making charging characteristics unstable and at the same time without bringing about lowering in anti-off-set property, and thus an excellent toner image can be fixed.

    摘要翻译： 公开了一种用于静电图像显影的调色剂，其包含通过使含有低分子量聚合物组分的聚合物和具有高分子量的聚合物组分的聚合物作为主要组分，至少含有低分子量的聚合物组分含有 羧酸组分与多价金属化合物反应，以及使用上述调色剂固定调色剂图像的方法。 根据本发明，可以提供一种用于显影静电图像的调色剂，其具有更好的定影性而不降低已经改善的防脱离性能，并且还可以制备具有良好的再现性而不引起凝胶化，尽管 金属化合物可以配制在其中，并且可以提高定影性而不使充电特性不稳定，同时不会降低防脱离性，因此可以固定优异的调色剂图像。

    Method for manufacturing semiconductor chip
    3.
    发明申请
    Method for manufacturing semiconductor chip 审中-公开
    制造半导体芯片的方法

    公开(公告)号：US20070037364A1

    公开(公告)日：2007-02-15

    申请号：US10577442

    申请日：2004-12-02

    申请人： Daihei Sugita ,  Masateru Fukuoka ,  Munehiro Hatai ,  Satoshi Hayashi ,  Kazuhiro Shimomura ,  Yoshikazu Kitajima ,  Yasuhiko Oyama

    发明人： Daihei Sugita ,  Masateru Fukuoka ,  Munehiro Hatai ,  Satoshi Hayashi ,  Kazuhiro Shimomura ,  Yoshikazu Kitajima ,  Yasuhiko Oyama

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67132

    摘要： It is the object of the invention to provide a method for manufacturing a semiconductor chip capable of obtaining a semiconductor chip at a high manufacturing efficiency without damages. The invention is a method for manufacturing a semiconductor chip, which comprises a tape adhesion step of sticking a pressure sensitive adhesive tape for dicing having a pressure sensitive adhesive layer containing a gas generating agent for generating a gas by radiating light to a semiconductor wafer with a circuit formed; a dicing step for dicing the wafer with the pressure sensitive adhesive tape for dicing stuck and dividing the semiconductor wafer into each semiconductor chip; a separation step of separating at least a portion of the pressure sensitive adhesive tape for dicing from the semiconductor chip by radiating light to the divided each semiconductor chip; and a pickup step of picking the semiconductor chip up by a needle-less pickup method.

    摘要翻译： 本发明的目的是提供一种能够以高制造效率获得半导体芯片而不损坏的半导体芯片的制造方法。 本发明是一种半导体芯片的制造方法，其特征在于，包括粘贴粘合带的粘合步骤，该粘合带具有粘合层，该压敏粘合带具有含有用于产生气体的气体发生剂的压敏粘合剂层， 电路形成; 切割步骤，用用于切割粘合的压敏粘合带切割晶片并将半导体晶片分成每个半导体芯片; 分离步骤，通过向所述分割的每个半导体芯片照射光来将用于切割的所述压敏粘合带的至少一部分与所述半导体芯片分离; 以及通过无针拾取方法拾取半导体芯片的拾取步骤。

    IC chip manufacturing method
    4.
    发明授权
    IC chip manufacturing method 有权
    IC芯片制造方法

    公开(公告)号：US06939741B2

    公开(公告)日：2005-09-06

    申请号：US10475257

    申请日：2003-01-15

    申请人： Masateru Fukuoka ,  Yasuhiko Oyama ,  Munehiro Hatai ,  Satoshi Hayashi ,  Shigeru Danjo ,  Masahiko Kitamura ,  Koichi Yajima

    发明人： Masateru Fukuoka ,  Yasuhiko Oyama ,  Munehiro Hatai ,  Satoshi Hayashi ,  Shigeru Danjo ,  Masahiko Kitamura ,  Koichi Yajima

    IPC分类号： B24B37/04 ,  C09J5/08 ,  C09J7/02 ,  H01L21/301 ,  H01L21/304 ,  H01L21/44 ,  H01L21/46 ,  H01L21/48 ,  H01L21/68 ,  H01L21/78

    CPC分类号： C09J5/08 ,  C09J7/38 ,  C09J2203/326 ,  C09J2205/102 ,  C09J2205/302 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68318 ,  H01L2221/68327

    摘要： It is an object of the invention to provide a method for manufacturing an IC chip wherein a wafer is prevented from being damaged and the ease of handling thereof is improved so that the wafer can be appropriately processed into IC chips, even if a thickness of the wafer is extremely reduced to approximately 50 μm.The invention provides a method for manufacturing an IC chip comprising, at least: the step of securing a wafer to a support plate via a support tape having a surface layer comprising an adhesive (A) containing a gas generating agent for generating a gas due to stimulation and a surface layer comprising an adhesive (B); the step of polishing said wafer with securing said wafer to said support plate via said support tape; the step of adhering a dicing tape to said polished wafer; the step of providing said stimulation to said adhesive (A) layer; the step of removing said support tape from said wafer; and the step of dicing said wafer, which comprises adhering said surface layer comprising adhesive (A) to said wafer and adhering said surface layer comprising adhesive (B) to said support plate in the step of securing said wafer to said support plate via said support tape, providing said stimulation while uniformly sucking under reduced pressure the entirety of said wafer from the dicing tape side thereof, and then removing said support tape from said wafer in the step of providing stimulation to said adhesive (A) layer and in the step of removing said support tape from said wafer.

    摘要翻译： 本发明的目的是提供一种制造IC芯片的方法，其中防止晶片损坏，并且其处理的便利性得到改善，使得晶片可以适当地加工成IC芯片，即使其厚度 晶片极大地减少到约50毫米。 本发明提供了一种制造IC芯片的方法，至少包括以下步骤：至少通过具有表面层的支撑带将晶片固定到支撑板的步骤，所述支撑带包括粘合剂（A），所述粘合剂（A）含有用于产生气体的气体发生剂， 刺激和包含粘合剂（B）的表面层; 通过所述支撑带将所述晶片固定到所述支撑板上来抛光所述晶片的步骤; 将切割带粘附到所述抛光晶片的步骤; 向所述粘合剂（A）层提供所述刺激的步骤; 从所述晶片去除所述支撑带的步骤; 以及切割所述晶片的步骤，其包括将包含粘合剂（A）的所述表面层粘附到所述晶片并且将包含粘合剂（B）的所述表面层粘附到所述支撑板上，在通过所述支撑件将所述晶片固定到所述支撑板的步骤中 提供所述刺激，同时在减压下均匀地从其切割带侧抽吸所述晶片的整体，然后在向所述粘合剂（A）层提供刺激的步骤中从所述晶片除去所述支撑带，并且在步骤 从所述晶片去除所述支撑带。

    Ic Chip Manufacturing Method
    6.
    发明申请
    Ic Chip Manufacturing Method 审中-公开
    Ic芯片制造方法

    公开(公告)号：US20080314507A1

    公开(公告)日：2008-12-25

    申请号：US11658880

    申请日：2004-08-02

    申请人： Munehiro Hatai ,  Satoshi Hayashi ,  Masateru Fukuoka ,  Shigeru Danjo ,  Yasuhiko Oyama ,  Kazuhiro Shimomura ,  Daihei Sugita ,  Yoshikazu Kitajima

    发明人： Munehiro Hatai ,  Satoshi Hayashi ,  Masateru Fukuoka ,  Shigeru Danjo ,  Yasuhiko Oyama ,  Kazuhiro Shimomura ,  Daihei Sugita ,  Yoshikazu Kitajima

    IPC分类号： B32B38/10

    CPC分类号： C09J5/00 ,  C08K5/23 ,  C09J5/08 ,  C09J7/38 ,  C09J7/385 ,  C09J2201/128 ,  C09J2203/326 ,  C09J2205/102 ,  C09J2205/302 ,  C09J2433/00 ,  H01L21/67115

    摘要： It is an object of the invention to provide a method for producing an IC chip capable of producing an IC chip with a thickness as extremely thin as 50 μm or thinner, for example, about 25 to 30 μm at a high productivity.The invention is a method for producing an IC chip, which comprises; at least a step 1 of fixing a wafer in a support plate by sticking the wafer to the gas generating agent-containing face of a pressure sensitive adhesive double-faced tape having a pressure sensitive adhesive layer containing a gas generating agent for generating a gas by light radiation in at least one face; a step 2 of grinding the wafer in a state of being fixed in the support plate through the pressure sensitive adhesive double-faced tape; a step 3 of radiating light to the pressure sensitive adhesive double-faced tape; and a step 4 of separating the pressure sensitive adhesive double-faced tape from the wafer, a gas releasing speed from the pressure sensitive adhesive double-faced tape being 5 L/cm2·min or higher in the step 3.

    摘要翻译： 本发明的目的是提供一种制造IC芯片的方法，所述IC芯片能够以高生产率制造厚度极薄至50μm或更薄，例如约25至30μm的IC芯片。 本发明是一种制造IC芯片的方法，包括： 至少步骤1，通过将晶片粘贴到具有压敏粘合剂层的压敏粘合剂双面胶带的气体发生剂含有面上，将晶片固定在支撑板中，该压敏粘合剂层含有用于产生气体的气体发生剂 至少一面的光辐射; 在通过压敏双面胶带固定在支撑板上的状态下研磨晶片的步骤2; 向压敏胶双面胶带照射光的步骤3; 以及在步骤3中将压敏粘合剂双面胶带从晶片分离的步骤4，压敏粘合剂双面胶带的气体释放速度为5L / cm2.min以上。

    Method for manufacturing semiconductor chip
    7.
    发明授权
    Method for manufacturing semiconductor chip 有权
    制造半导体芯片的方法

    公开(公告)号：US07335578B2

    公开(公告)日：2008-02-26

    申请号：US10490557

    申请日：2003-04-09

    申请人： Masateru Fukuoka ,  Munehiro Hatai ,  Satoshi Hayashi ,  Yasuhiko Oyama ,  Shigeru Danjo ,  Masahiko Kitamura ,  Koichi Yajima

    发明人： Masateru Fukuoka ,  Munehiro Hatai ,  Satoshi Hayashi ,  Yasuhiko Oyama ,  Shigeru Danjo ,  Masahiko Kitamura ,  Koichi Yajima

    IPC分类号： H01L21/00

    CPC分类号： H01L21/6835 ,  B24B7/228 ,  B24B41/068 ,  H01L21/304 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834 ,  Y10S438/977

    摘要： A semiconductor wafer (W) where circuits are formed in the area divided by streets is split into semiconductor chips having individual circuits. By interposing an adhesive sheet, whose adhesive force is lowered by stimulation, between the semiconductor wafer (W) and the support plate (13), the front side of the semiconductor wafer (W) is adhered to the support plate (13), thereby exposing the rear face (10) of the semiconductor wafer (W). The rear face (10) of the semiconductor wafer (W) with the support plate (13) is ground. After the grinding is finished, the semiconductor wafer (W) held with the rear face (10) up is diced into semiconductor chips (C). The adhesive sheet is given stimulus to lower the adhesive force and the semiconductor chips (C) are removed from the support plate (13). The semiconductor wafer and semiconductor chips are always supported by the support plate, avoiding damage and deformation.

    摘要翻译： 在由街道划分的区域中形成电路的半导体晶片（W）被分成具有单独电路的半导体芯片。 通过在半导体晶片（W）和支撑板（13）之间插入粘合剂片（其粘合力被刺激而降低），半导体晶片（W）的前侧被粘附到支撑板（13），由此 暴露半导体晶片（W）的背面（10）。 研磨具有支撑板（13）的半导体晶片（W）的背面（10）。 研磨完成后，将保持有背面（10）的半导体晶片（W）切成半导体芯片（C）。 给予粘合片刺激以降低粘合力，并且将半导体芯片（C）从支撑板（13）移除。 半导体晶片和半导体芯片总是由支撑板支撑，避免损坏和变形。