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    SPUTTERING DEVICE AND FILM FORMING METHOD
    3.
    发明申请
    SPUTTERING DEVICE AND FILM FORMING METHOD 有权
    溅射装置和薄膜成型方法

    公开(公告)号：US20080245657A1

    公开(公告)日：2008-10-09

    申请号：US12136313

    申请日：2008-06-10

    申请人： Satoru TAKASAWA ,  Sadayuki Ukishima ,  Noriaki Tani ,  Satoru Ishibashi

    发明人： Satoru TAKASAWA ,  Sadayuki Ukishima ,  Noriaki Tani ,  Satoru Ishibashi

    IPC分类号： C23C14/34

    CPC分类号： C23C14/352 ,  C23C14/10 ,  H01J37/3405 ,  H01J37/3423

    摘要： A sputtering apparatus according to the present invention is provided with first to fourth targets. The first and the second targets are disposed so that their surfaces face each other. The third and the fourth targets are also disposed so that their surfaces face each other. When a dielectric film is formed, sputtering is alternately performed on the first and the second targets and on the third and the fourth targets. When sputtering is performed on two of the targets having surfaces that face each other, the remaining two targets function as a ground. As a result, abnormal discharges are inhibited.

    摘要翻译： 根据本发明的溅射装置设置有第一至第四靶。 第一和第二靶被设置为使得它们的表面彼此面对。 第三和第四目标也被设置为使得它们的表面彼此面对。 当形成电介质膜时，在第一和第二靶和第三靶和第四靶上交替地进行溅射。 当对具有彼此相对的表面的两个靶进行溅射时，剩余的两个靶用作地面。 结果，异常放电被抑制。

    WIRING LAYER, SEMICONDUCTOR DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE
    4.
    发明申请
    WIRING LAYER, SEMICONDUCTOR DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE 有权
    接线层，半导体器件和液晶显示器件

    公开(公告)号：US20120194757A1

    公开(公告)日：2012-08-02

    申请号：US13403145

    申请日：2012-02-23

    申请人： Satoru TAKASAWA ,  Masanori SHIRAI ,  Satoru ISHIBASHI

    发明人： Satoru TAKASAWA ,  Masanori SHIRAI ,  Satoru ISHIBASHI

    IPC分类号： G02F1/136 ,  H05K1/03 ,  G02F1/1345 ,  H01L29/786

    CPC分类号： H01L27/124 ,  C22C9/00 ,  C22C9/01 ,  H01L21/32051 ,  H01L23/53238 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is an electrode layer and a wiring layer, which are free from peeling from a glass substrate. A wiring layer and a gate electrode layer are constituted by an adhering film which is a thin film made of Cu—Mg—Al formed on a surface of a glass substrate, and a copper film formed on the adhering film. When the adhering film includes Mg in a range of at least 0.5 atom % and at most 5 atom %, and aluminum in a range of at least 5 atom % and at most 15 atom %, assuming that the total number of atoms of copper, magnesium and aluminum is taken as 100 atom % , adhesion of the adhering film to the glass substrate becomes high, and the copper thin film is not peeled from the glass substrate. The wiring layer is electrically connected to a pixel electrode of a liquid crystal display device.

    摘要翻译： 设置有不从玻璃基板剥离的电极层和布线层。 布线层和栅极电极层由在玻璃基板的表面上形成的由Cu-Mg-Al构成的薄膜和形成在粘合膜上的铜膜的粘合膜构成。 当粘合膜包含至少0.5原子％至多5原子％范围内的Mg，至少5原子％至多15原子％的铝时，假设铜的原子总数， 镁和铝为100原子％，粘合膜对玻璃基板的粘附性变高，铜薄膜不会从玻璃基板剥离。 布线层与液晶显示装置的像素电极电连接。

    METHOD FOR PRODUCING ELECTRONIC DEVICE, ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE, AND TRANSISTOR
    5.
    发明申请
    METHOD FOR PRODUCING ELECTRONIC DEVICE, ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE, AND TRANSISTOR 审中-公开
    用于制造电子器件的方法，电子器件，半导体器件和晶体管

    公开(公告)号：US20120119269A1

    公开(公告)日：2012-05-17

    申请号：US13310056

    申请日：2011-12-02

    申请人： Satoru TAKASAWA ,  Masanori Shirai ,  Satoru Ishibashi ,  Tadashi Masuda ,  Yasuo Nakadai

    发明人： Satoru TAKASAWA ,  Masanori Shirai ,  Satoru Ishibashi ,  Tadashi Masuda ,  Yasuo Nakadai

    IPC分类号： H01L29/78 ,  H01L23/48 ,  B05D5/12

    CPC分类号： H01L23/53238 ,  C22C9/00 ,  G02F2001/136295 ,  H01L27/124 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A technique is provided which prevents an increase in the resistivity of a conductive wiring film. A conductive layer containing Ca in a content rate of 0.3 atom % or more is provided on the surfaces of each of conductive wiring films which are to be exposed to a gas containing a Si atom in a chemical structure at a high temperature. When a gate insulating layer or a protection film containing Si is formed on the surface of the conductive layer, the Si atoms do not diffuse into the conductive layer and a resistance value does not increase, even if the conductive layer is exposed to the raw material gas containing Si in a chemical structure . Further, a CuCaO layer can be formed as an adhesive layer for preventing Si diffusion from a glass substrate or a silicon semiconductor.

    摘要翻译： 提供了防止导电布线膜的电阻率增加的技术。 在高温化学结构中暴露于含有Si原子的气体的导电布线膜的表面上，设置含有0.3原子％以上的Ca的导电层。 当在导电层的表面上形成栅绝缘层或含有Si的保护膜时，即使导电层暴露于原料，Si原子也不会扩散到导电层中，并且电阻值不增加 含有化学结构中的Si的气体。 此外，CuCaO层可以形成为用于防止Si从玻璃衬底或硅半导体扩散的粘合剂层。

    METHOD FOR PRODUCING A THIN FILM TRANSISTOR AND METHOD FOR FORMING AN ELECTRODE
    6.
    发明申请
    METHOD FOR PRODUCING A THIN FILM TRANSISTOR AND METHOD FOR FORMING AN ELECTRODE 审中-公开
    用于制造薄膜晶体管的方法和形成电极的方法

    公开(公告)号：US20100075475A1

    公开(公告)日：2010-03-25

    申请号：US12630245

    申请日：2009-12-03

    申请人： Satoru TAKASAWA ,  Yuuichi Oishi ,  Miho Shimizu ,  Tooru Kikuchi ,  Satoru Ishibashi

    发明人： Satoru TAKASAWA ,  Yuuichi Oishi ,  Miho Shimizu ,  Tooru Kikuchi ,  Satoru Ishibashi

    IPC分类号： H01L21/336 ,  H01L21/443

    CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L29/458

    摘要： An electrode is prevented from being peeled from a substrate or a silicon layer. After the surface of a first copper thin film composed mainly of copper is treated by exposing it to an ammonia gas, a film of silicon nitride is formed on the surface of the first copper thin film by generating a plasma of a raw material gas containing a silane gas and an ammonia gas in an atmosphere in which an object to be processed is placed. Since the surface is preliminarily treated with the ammonia gas, the silane gas is prevented from being diffused into the first copper thin film. Therefore, an electrode constituted by the surface-treated first copper thin film is not peeled from the glass substrate or the silicon layer. In addition, its electric resistance value does not rise.

    摘要翻译： 防止电极从基板或硅层剥离。 在通过将其暴露于氨气来处理主要由铜构成的第一铜薄膜的表面之后，通过生成含有原料气体的原料气体的等离子体，在第一铜薄膜的表面上形成氮化硅膜 在其中放置待加工物体的气氛中的硅烷气体和氨气。 由于表面被氨气预处理，因此防止硅烷气体扩散到第一铜薄膜中。 因此，由表面处理的第一铜薄膜构成的电极不会从玻璃基板或硅层剥离。 此外，其电阻值不上升。

    SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY DEVICE HAVING SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY DEVICE HAVING SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
    具有半导体器件的半导体器件，液晶显示器件以及用于制造半导体器件的方法

    公开(公告)号：US20120206685A1

    公开(公告)日：2012-08-16

    申请号：US13402120

    申请日：2012-02-22

    申请人： Satoru TAKASAWA ,  Masanori SHIRAI ,  Satoru ISHIBASHI

    发明人： Satoru TAKASAWA ,  Masanori SHIRAI ,  Satoru ISHIBASHI

    IPC分类号： G02F1/1343 ,  H01L21/441 ,  H01L29/786

    CPC分类号： H01L23/53238 ,  G02F1/1368 ,  G02F2201/501 ,  G02F2202/28 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is an electrode film which does not exfoliate from, or diffuse into, an oxide semiconductor or an oxide thin film. An electrode layer comprises a highly adhesive barrier film being a Cu—Mg—Al thin film and a copper thin film; and an oxide semiconductor and an oxide thin film contact with the highly adhesive barrier film. With the highly adhesive barrier film having magnesium in a range of at least 0.5 at % but at most 5 at % and aluminum at least 5 at % but at most 15 at % when the total number of atoms of copper, magnesium, and aluminum is 100 at %, the highly adhesive barrier film has both adhesion and barrier properties. The electrode layer is suitable because a source electrode layer and a drain electrode layer contact the oxide semiconductor layer. A stopper layer having an oxide may be provided on a layer under the electrode layer.

    摘要翻译： 公开了不会从氧化物半导体或氧化物薄膜剥离或扩散到其中的电极膜。 电极层包括Cu-Mg-Al薄膜和铜薄膜的高粘合阻挡膜; 并且氧化物半导体和氧化物薄膜与高度粘合的阻挡膜接触。 当具有至少0.5原子％但至多5原子％的镁的高度粘合的阻挡膜和当铜，镁和铝的原子总数为至少5原子％，但至多为15原子％时， 100原子％时，高粘合阻障膜具有粘合性和阻隔性。 电极层是合适的，因为源电极层和漏电极层接触氧化物半导体层。 可以在电极层下面的层上设置具有氧化物的阻挡层。

    METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR
    8.
    发明申请
    METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR 有权
    生产薄膜晶体管和薄膜晶体管的方法

    公开(公告)号：US20110068338A1

    公开(公告)日：2011-03-24

    申请号：US12881652

    申请日：2010-09-14

    申请人： Satoru TAKASAWA ,  Satoru Ishibashi ,  Tadashi Masuda

    发明人： Satoru TAKASAWA ,  Satoru Ishibashi ,  Tadashi Masuda

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L23/53238 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.

    摘要翻译： 提供即使暴露于氢等离子体时也不会剥离的金属布线膜。 金属布线膜由其中添加有Al的粘合层和设置在粘合层上并由纯铜制成的金属低电阻层构成。 当包含Al和氧的铜合金包括在粘合层中并且由其形成源电极和漏电极时，即使当暴露于氢等离子体时，铜也不会在粘附层和硅层之间的界面处析出 ，其防止粘附层和硅层之间的剥离的发生。 如果Al的量增加，由于粘合层和金属低电阻层的宽度在蚀刻之后大大不同，所以允许进行蚀刻的最大添加量是上限。