公开(公告)号：US20130183810A1

公开(公告)日：2013-07-18

申请号：US13479968

申请日：2012-05-24

申请人： Satoshi HONGO ,  Kenji Takahashi ,  Kazumasa Tanida

发明人： Satoshi HONGO ,  Kenji Takahashi ,  Kazumasa Tanida

IPC分类号： H01L21/762 ,  H01L21/00

CPC分类号： H01L21/2007 ,  H01L21/67092 ,  H01L21/76251 ,  Y10T29/413

摘要： According to one embodiment, a system for manufacturing a semiconductor device includes a spontaneous joining unit and a deformative joining unit. The spontaneous joining unit overlaps a first substrate and a second substrate and spontaneously joins mutual center portions of respective joint faces of the first substrate and the second substrate. The deformative joining unit deforms at least one peripheral portion of the respective joint faces of the first substrate and second substrate joined by the spontaneous joining unit toward the other peripheral portion and joins the mutual peripheral portions of the respective joint faces.

摘要翻译： 根据一个实施例，一种用于制造半导体器件的系统包括自发接合单元和变形接合单元。 自发接合单元与第一基板和第二基板重叠，并且自发地接合第一基板和第二基板的各个接合面的相互中心部分。 变形接合单元使由第一基板和第二基板的各个接合面的至少一个周边部分朝向另一个周边部分变形，并且连接各个接合面的相互的周边部分。

公开(公告)号：US20120217600A1

公开(公告)日：2012-08-30

申请号：US13368930

申请日：2012-02-08

申请人： Satoshi HONGO ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

发明人： Satoshi HONGO ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1469

摘要： A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.

摘要翻译： 根据实施例的半导体器件的制造方法包括在第一衬底的主表面上形成作为包括光电二极管的有源区的光电二极管层，形成布线层，其包括线和覆盖线的介电层 在光电二极管层上，并在布线层上形成电介质膜。 根据实施例的半导体器件的制造方法还包括将第二衬底接合到第一衬底的电介质膜，使得光电二极管层的晶体取向与第二衬底的晶体取向相匹配。

公开(公告)号：US20130062737A1

公开(公告)日：2013-03-14

申请号：US13428424

申请日：2012-03-23

申请人： Satoshi HONGO ,  Kazumasa Tanida ,  Kenji Takahashi

发明人： Satoshi HONGO ,  Kazumasa Tanida ,  Kenji Takahashi

IPC分类号： H01L29/06 ,  H01L21/78

CPC分类号： H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

摘要： According to one embodiment, a semiconductor device comprises a device substrate, and a supporting substrate. The supporting substrate is joined onto the device substrate. The device substrate has a first groove in an outer circumferential portion on a joint surface side to the supporting substrate.

摘要翻译： 根据一个实施例，半导体器件包括器件衬底和支撑衬底。 支撑衬底连接到器件衬底上。 装置基板在与支撑基板的接合面侧的外周部具有第一槽。

公开(公告)号：US20110233786A1

公开(公告)日：2011-09-29

申请号：US13044958

申请日：2011-03-10

申请人： Soichi HOMMA ,  Masayuki MIURA ,  Taku KAMOTO ,  Satoshi HONGO

发明人： Soichi HOMMA ,  Masayuki MIURA ,  Taku KAMOTO ,  Satoshi HONGO

IPC分类号： H01L23/28 ,  H01L21/50 ,  H01L21/56

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/3121 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/03 ,  H01L2224/05624 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/854 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/20752 ,  H01L2924/207

摘要： According to an embodiment, a separation layer and a wiring layer having an organic insulating film formed of a resin material and a metal wiring are sequentially formed on a support substrate. Regions of the organic insulating film corresponding to dicing regions are removed. Plural semiconductor chips are mounted on the wiring layer. A sealing resin layer is formed on the separation layer. The sealing resin layer is formed to cover edge surfaces of the device forming regions. The support substrate is separated from a resin sealing body having the wiring layer, the plural semiconductor chips and the sealing resin layer. The resin sealing body is cut according to the dicing regions to cingulate a structure configuring a semiconductor device.

摘要翻译： 根据实施例，在支撑基板上依次形成具有由树脂材料形成的有机绝缘膜和金属布线的分离层和布线层。 去除对应于切割区域的有机绝缘膜的区域。 多个半导体芯片安装在布线层上。 在分离层上形成密封树脂层。 密封树脂层形成为覆盖器件形成区域的边缘表面。 支撑基板与具有布线层，多个半导体芯片和密封树脂层的树脂密封体分离。 根据切割区域切割树脂密封体，以扣紧构成半导体器件的结构。