公开(公告)号：US20130183810A1

公开(公告)日：2013-07-18

申请号：US13479968

申请日：2012-05-24

申请人： Satoshi HONGO ,  Kenji Takahashi ,  Kazumasa Tanida

发明人： Satoshi HONGO ,  Kenji Takahashi ,  Kazumasa Tanida

IPC分类号： H01L21/762 ,  H01L21/00

CPC分类号： H01L21/2007 ,  H01L21/67092 ,  H01L21/76251 ,  Y10T29/413

摘要： According to one embodiment, a system for manufacturing a semiconductor device includes a spontaneous joining unit and a deformative joining unit. The spontaneous joining unit overlaps a first substrate and a second substrate and spontaneously joins mutual center portions of respective joint faces of the first substrate and the second substrate. The deformative joining unit deforms at least one peripheral portion of the respective joint faces of the first substrate and second substrate joined by the spontaneous joining unit toward the other peripheral portion and joins the mutual peripheral portions of the respective joint faces.

摘要翻译： 根据一个实施例，一种用于制造半导体器件的系统包括自发接合单元和变形接合单元。 自发接合单元与第一基板和第二基板重叠，并且自发地接合第一基板和第二基板的各个接合面的相互中心部分。 变形接合单元使由第一基板和第二基板的各个接合面的至少一个周边部分朝向另一个周边部分变形，并且连接各个接合面的相互的周边部分。

公开(公告)号：US20120217600A1

公开(公告)日：2012-08-30

申请号：US13368930

申请日：2012-02-08

申请人： Satoshi HONGO ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

发明人： Satoshi HONGO ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1469

摘要： A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.

摘要翻译： 根据实施例的半导体器件的制造方法包括在第一衬底的主表面上形成作为包括光电二极管的有源区的光电二极管层，形成布线层，其包括线和覆盖线的介电层 在光电二极管层上，并在布线层上形成电介质膜。 根据实施例的半导体器件的制造方法还包括将第二衬底接合到第一衬底的电介质膜，使得光电二极管层的晶体取向与第二衬底的晶体取向相匹配。

公开(公告)号：US20120190138A1

公开(公告)日：2012-07-26

申请号：US13354734

申请日：2012-01-20

申请人： Kazumasa TANIDA ,  Satoshi Hongo ,  Naoko Yamaguchi ,  Kenji Takahashi ,  Hideo Numata

发明人： Kazumasa TANIDA ,  Satoshi Hongo ,  Naoko Yamaguchi ,  Kenji Takahashi ,  Hideo Numata

IPC分类号： H01L21/66 ,  B32B37/30 ,  B32B41/00

CPC分类号： H01L21/681 ,  H01L21/67092 ,  H01L21/6838 ,  H01L27/1464

摘要： According to one embodiment, semiconductor manufacturing apparatus includes a first member that holds a first semiconductor substrate; a second member that holds a second semiconductor substrate in a state where a bonding surface of the second semiconductor substrate faces a bonding surface of the first semiconductor substrate; a distance detecting unit that detects a distance between the bonding surface of the first semiconductor substrate and the bonding surface of the second semiconductor substrate; an adjusting unit that adjusts the distance between the bonding surface of the first semiconductor substrate and the bonding surface of the second semiconductor substrate to a predetermined value by moving at least one of the first and second members based on a detection result of the distance detecting unit; and a third member that forms the bonding start point between the first semiconductor substrate and the second semiconductor substrate.

摘要翻译： 根据一个实施例，半导体制造装置包括保持第一半导体衬底的第一构件; 第二构件，其在第二半导体衬底的接合表面面对第一半导体衬底的接合表面的状态下保持第二半导体衬底; 距离检测单元，其检测第一半导体衬底的接合表面和第二半导体衬底的接合表面之间的距离; 调整单元，其基于所述距离检测单元的检测结果，通过移动所述第一和第二构件中的至少一个来调整所述第一半导体衬底的接合表面与所述第二半导体衬底的接合表面之间的距离为预定值 ; 以及在第一半导体衬底和第二半导体衬底之间形成接合起始点的第三构件。

公开(公告)号：US09004337B2

公开(公告)日：2015-04-14

申请号：US13479968

申请日：2012-05-24

申请人： Satoshi Hongo ,  Kenji Takahashi ,  Kazumasa Tanida

发明人： Satoshi Hongo ,  Kenji Takahashi ,  Kazumasa Tanida

IPC分类号： B31B1/68 ,  H01L21/20 ,  H01L21/67 ,  H01L21/762

CPC分类号： H01L21/2007 ,  H01L21/67092 ,  H01L21/76251 ,  Y10T29/413

摘要： According to one embodiment, a system for manufacturing a semiconductor device includes a spontaneous joining unit and a deformative joining unit. The spontaneous joining unit overlaps a first substrate and a second substrate and spontaneously joins mutual center portions of respective joint faces of the first substrate and the second substrate. The deformative joining unit deforms at least one peripheral portion of the respective joint faces of the first substrate and second substrate joined by the spontaneous joining unit toward the other peripheral portion and joins the mutual peripheral portions of the respective joint faces.

摘要翻译： 根据一个实施例，一种用于制造半导体器件的系统包括自发接合单元和变形接合单元。 自发接合单元与第一基板和第二基板重叠，并且自发地接合第一基板和第二基板的各个接合面的相互中心部分。 变形接合单元使由第一基板和第二基板的各个接合面的至少一个周边部分朝向另一个周边部分变形，并且连接各个接合面的相互的周边部分。

公开(公告)号：US08980671B2

公开(公告)日：2015-03-17

申请号：US13368930

申请日：2012-02-08

申请人： Satoshi Hongo ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

发明人： Satoshi Hongo ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L27/146 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L27/1464 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1469

摘要： A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.

摘要翻译： 根据实施例的半导体器件的制造方法包括在第一衬底的主表面上形成作为包括光电二极管的有源区的光电二极管层，形成布线层，其包括线和覆盖线的介电层 在光电二极管层上，并在布线层上形成电介质膜。 根据实施例的半导体器件的制造方法还包括将第二衬底接合到第一衬底的电介质膜，使得光电二极管层的晶体取向与第二衬底的晶体取向相匹配。

公开(公告)号：US08822307B2

公开(公告)日：2014-09-02

申请号：US13422966

申请日：2012-03-16

申请人： Naoko Yamaguchi ,  Kazumasa Tanida ,  Hideo Numata ,  Satoshi Hongo ,  Kenji Takahashi

发明人： Naoko Yamaguchi ,  Kazumasa Tanida ,  Hideo Numata ,  Satoshi Hongo ,  Kenji Takahashi

IPC分类号： H01L21/762 ,  B32B37/10 ,  B32B38/18 ,  H01L21/67

CPC分类号： H01L21/76251 ,  H01L21/67092 ,  Y10T156/1744

摘要： According to one embodiment, a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus includes a stage, a substrate supporter, first and second pushers, and a controller. The stage is configured to support outer periphery portions of the first semiconductor substrate from below. The substrate supporter is configured to hold the back of the second semiconductor substrate. The first and second pushers are configured to bring the first and second semiconductor substrates in contact. The controller is configured to form the bonding initiation point between the first and second semiconductor substrates.

摘要翻译： 根据一个实施例，提供一种半导体制造装置。 半导体制造装置包括台，基板支撑件，第一和第二推动器以及控制器。 该台被配置为从下方支撑第一半导体衬底的外围部分。 衬底支撑件构造成保持第二半导体衬底的背面。 第一和第二推动器构造成使第一和第二半导体衬底接触。 控制器被配置为在第一和第二半导体衬底之间形成接合起始点。

公开(公告)号：US20130062737A1

公开(公告)日：2013-03-14

申请号：US13428424

申请日：2012-03-23

申请人： Satoshi HONGO ,  Kazumasa Tanida ,  Kenji Takahashi

发明人： Satoshi HONGO ,  Kazumasa Tanida ,  Kenji Takahashi

IPC分类号： H01L29/06 ,  H01L21/78

CPC分类号： H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

摘要： According to one embodiment, a semiconductor device comprises a device substrate, and a supporting substrate. The supporting substrate is joined onto the device substrate. The device substrate has a first groove in an outer circumferential portion on a joint surface side to the supporting substrate.

摘要翻译： 根据一个实施例，半导体器件包括器件衬底和支撑衬底。 支撑衬底连接到器件衬底上。 装置基板在与支撑基板的接合面侧的外周部具有第一槽。

公开(公告)号：US20120329241A1

公开(公告)日：2012-12-27

申请号：US13422966

申请日：2012-03-16

申请人： Naoko Yamaguchi ,  Kazumasa Tanida ,  Hideo Numata ,  Satoshi Hongo ,  Kenji Takahashi

发明人： Naoko Yamaguchi ,  Kazumasa Tanida ,  Hideo Numata ,  Satoshi Hongo ,  Kenji Takahashi

IPC分类号： B32B37/10 ,  B32B38/18 ,  H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/67092 ,  Y10T156/1744

摘要： According to one embodiment, a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus includes a stage, a substrate supporter, first and second pushers, and a controller. The stage is configured to support outer periphery portions of the first semiconductor substrate from below. The substrate supporter is configured to hold the back of the second semiconductor substrate. The first and second pushers are configured to bring the first and second semiconductor substrates in contact. The controller is configured to form the bonding initiation point between the first and second semiconductor substrates.

摘要翻译： 根据一个实施例，提供一种半导体制造装置。 半导体制造装置包括台，基板支撑件，第一和第二推动器以及控制器。 该台被配置为从下方支撑第一半导体衬底的外围部分。 衬底支撑件构造成保持第二半导体衬底的背面。 第一和第二推动器构造成使第一和第二半导体衬底接触。 控制器被配置为在第一和第二半导体衬底之间形成接合起始点。

公开(公告)号：US08269315B2

公开(公告)日：2012-09-18

申请号：US12134363

申请日：2008-06-06

申请人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Kenji Takahashi

发明人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Kenji Takahashi

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05124 ,  H01L2224/05186 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01055 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2224/05099 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/013 ,  H01L2924/01014 ,  H01L2924/01029

摘要： A semiconductor device 1 has a through hole 3 formed in a second substrate 2. On the front surface of the semiconductor substrate 2, a first insulating layer 4 is coated having an opening 4a of the same diameter as that of the through hole 3, and a first wiring layer 5 is formed on the first insulating layer 4. Further, near the first wiring layer 5, the through hole 3 and a through connection portion constituted of a third insulating layer 8 formed on the inner surface and the like and a third wiring layer 9 filled and formed in the through hole 3 are formed. In addition, a second wiring layer 7 internally contacting the through connection portion is electrically connected with the first wiring layer 5. Between the inner surface of the through hole 3 and the first wiring layer 5, a second insulating layer 6 intervenes so that the first wiring layer 5 is separated from the third wiring layer 9 filled and formed in the through hole 3.

摘要翻译： 半导体器件1具有形成在第二衬底2中的通孔3.在半导体衬底2的正面上涂覆第一绝缘层4，其具有与通孔3直径相同的开口4a， 在第一绝缘层4上形成第一布线层5.此外，在第一布线层5附近，形成有内表面等的由第三绝缘层8构成的通孔3和贯通连接部， 形成在通孔3中填充并形成的布线层9。 此外，内部与贯通连接部接触的第二布线层7与第一布线层5电连接。在通孔3的内表面和第一布线层5之间，介入第二绝缘层6， 布线层5与填充并形成在通孔3中的第三布线层9分离。

公开(公告)号：US08228426B2

公开(公告)日：2012-07-24

申请号：US12511099

申请日：2009-07-29

申请人： Mie Matsuo ,  Atsuko Kawasaki ,  Kenji Takahashi ,  Masahiro Sekiguchi ,  Kazumasa Tanida

发明人： Mie Matsuo ,  Atsuko Kawasaki ,  Kenji Takahashi ,  Masahiro Sekiguchi ,  Kazumasa Tanida

IPC分类号： H04N5/225 ,  H01L21/00 ,  H01L31/062

CPC分类号： H04N5/2257 ,  H01L23/481 ,  H01L27/14618 ,  H01L27/14625 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor package includes a solid-state imaging element, electrode pad, through-hole electrode, and light-transmitting substrate. The solid-state imaging element is formed on the first main surface of a semiconductor substrate. The electrode pad is formed on the first main surface of the semiconductor substrate. The through-hole electrode is formed to extend through the semiconductor substrate between the first main surface and a second main surface opposite to the electrode pad formed on the first main surface. The light-transmitting substrate is placed on a patterned adhesive to form a hollow on the solid-state imaging element. The thickness of the semiconductor substrate below the hollow when viewed from the light-transmitting substrate is larger than that of the semiconductor substrate below the adhesive.

摘要翻译： 半导体封装包括固态成像元件，电极焊盘，通孔电极和透光衬底。 固态成像元件形成在半导体衬底的第一主表面上。 电极焊盘形成在半导体衬底的第一主表面上。 通孔电极形成为在第一主表面和与形成在第一主表面上的电极焊盘相对的第二主表面之间延伸穿过半导体衬底。 将透光基板放置在图案化的粘合剂上以在固态成像元件上形成中空。 从透光性基板观察时，半导体衬底在中空部下方的厚度大于粘合剂下方的半导体衬底的厚度。