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    Micro-actuation element provided with torsion bars
    2.
    发明申请
    Micro-actuation element provided with torsion bars 有权
    配有扭杆的微动元件

    公开(公告)号：US20050200986A1

    公开(公告)日：2005-09-15

    申请号：US11101519

    申请日：2005-04-08

    申请人： Osamu Tsuboi ,  Yoshihiro Mizuno ,  Satoshi Ueda ,  Ippei Sawaki ,  Hisao Okuda ,  Fumio Yamagishi ,  Hiromitsu Soneda ,  Norinao Kouma

    发明人： Osamu Tsuboi ,  Yoshihiro Mizuno ,  Satoshi Ueda ,  Ippei Sawaki ,  Hisao Okuda ,  Fumio Yamagishi ,  Hiromitsu Soneda ,  Norinao Kouma

    IPC分类号： G02B26/08 ,  H02N1/00

    CPC分类号： G02B26/0841 ,  G02B26/085 ,  H02N1/008

    摘要： The micro-actuation element (X1) includes a movable unit (111), a frame (112) and a coupler (113) for connecting these, where the unit, the frame and the coupler are integrally formed in a material substrate having a multi-layer structure that consists of electroconductive layers (110a-110c), such as a core conduction layer (110b), and insulation layers (110d, 110e) intervening between the electroconductive layers (110a-110c). The movable unit (111) includes a first structure originating in the core conduction layer (110b). The frame (112) includes a second structure originating in the core conduction layer (110b). The coupler (113) includes a plurality of electrically separated torsion bars (113a, 113b) that originate in the core conduction layer (110b) and are connected continuously to the first structure and the second structure.

    摘要翻译： 微致动元件（X 1）包括可移动单元（111），框架（112）和用于连接它们的耦合器（113），其中单元，框架和耦合器一体形成在具有 由导电层（110a-110c），例如芯导电层（110b）和介于导电层（110a-110c）之间的绝缘层（110d，110e））组成的多层结构， 。 可移动单元（111）包括源于芯导电层（110b）的第一结构。 框架（112）包括源于芯导电层（110b）的第二结构。 耦合器（113）包括多个电分离的扭力杆（113a，113b），其产生在芯导电层（110b）中并连续地连接到第一结构和第二结构。

    Micromirror unit with torsion connector having nonconstant width
    3.
    发明授权
    Micromirror unit with torsion connector having nonconstant width 有权
    具有扭曲连接器的微镜单元具有不恒定的宽度

    公开(公告)号：US07755824B2

    公开(公告)日：2010-07-13

    申请号：US12219010

    申请日：2008-07-15

    申请人： Osamu Tsuboi ,  Satoshi Ueda ,  Yoshihiro Mizuno ,  Ippei Sawaki ,  Hisao Okuda

    发明人： Osamu Tsuboi ,  Satoshi Ueda ,  Yoshihiro Mizuno ,  Ippei Sawaki ,  Hisao Okuda

    IPC分类号： G02B26/08

    CPC分类号： G02B26/085 ,  G02B26/0841 ,  Y10S359/904

    摘要： A micromirror unit is provided which includes a frame, a mirror forming base upon which a mirror surface is formed, and a torsion connector which includes a first end connected to the mirror forming base and a second end connected to the frame. The torsion connector defines a rotation axis about which the mirror forming base is rotated relative to the frame. The torsion connector has a width measured in a direction which is parallel to the mirror surface and perpendicular to the rotation axis. The width of the torsion connector is relatively great at the first end. The width becomes gradually smaller from the first end toward the second end.

    摘要翻译： 提供了一种微镜单元，其包括框架，形成有镜面的反射镜形成基座以及连接到反射镜形成基座的第一端和连接到框架的第二端的扭转连接器。 扭转连接器限定了旋转轴线，镜子形成基座围绕该轴线相对于框架旋转。 扭转连接器具有在与镜面平行且垂直于旋转轴线的方向上测量的宽度。 第一端扭转连接器的宽度相对较大。 宽度从第一端朝向第二端逐渐变小。

    Micro-actuation element provided with torsion bars
    4.
    发明授权
    Micro-actuation element provided with torsion bars 有权
    配有扭杆的微动元件

    公开(公告)号：US07751108B2

    公开(公告)日：2010-07-06

    申请号：US11987899

    申请日：2007-12-05

    申请人： Osamu Tsuboi ,  Yoshihiro Mizuno ,  Satoshi Ueda ,  Ippei Sawaki ,  Hisao Okuda ,  Fumio Yamagishi ,  Hiromitsu Soneda ,  Norinao Kouma

    发明人： Osamu Tsuboi ,  Yoshihiro Mizuno ,  Satoshi Ueda ,  Ippei Sawaki ,  Hisao Okuda ,  Fumio Yamagishi ,  Hiromitsu Soneda ,  Norinao Kouma

    IPC分类号： G02B26/08 ,  H02N1/00

    CPC分类号： G02B26/0841 ,  G02B26/085 ,  H02N1/008

    摘要： The micro-actuation element (X1) includes a movable unit (111), a frame (112) and a coupler (113) for connecting these, where the unit, the frame and the coupler are integrally formed in a material substrate having a multi-layer structure that consists of electroconductive layers (110a-110c), such as a core conduction layer (110b), and insulation layers (110d, 110e) intervening between the electroconductive layers (110a-110c). The movable unit (111) includes a first structure originating in the core conduction layer (110b). The frame (112) includes a second structure originating in the core conduction layer (110b). The coupler (113) includes a plurality of electrically separated torsion bars (113a, 113b) that originate in the core conduction layer (110b) and are connected continuously to the first structure and the second structure.

    摘要翻译： 微型致动元件（X1）包括可移动单元（111），框架（112）和用于连接它们的联接器（113），其中单元，框架和耦合器一体地形成在具有多个 由导电层（110a-110c）（例如芯导电层（110b））和介于导电层（110a-110c）之间的绝缘层（110d，110e）组成。 可移动单元（111）包括源于芯导电层（110b）的第一结构。 框架（112）包括源于芯导电层（110b）的第二结构。 耦合器（113）包括多个电分离的扭杆（113a，113b），其产生在芯导电层（110b）中并且连续地连接到第一结构和第二结构。

    Micro-actuation element provided with torsion bars
    5.
    发明申请
    Micro-actuation element provided with torsion bars 有权
    配有扭杆的微动元件

    公开(公告)号：US20080285108A1

    公开(公告)日：2008-11-20

    申请号：US11987899

    申请日：2007-12-05

    申请人： Osamu Tsuboi ,  Yoshihiro Mizuno ,  Satoshi Ueda ,  Ippei Sawaki ,  Hisao Okuda ,  Fumio Yamagishi ,  Hiromitsu Soneda ,  Norinao Kouma

    发明人： Osamu Tsuboi ,  Yoshihiro Mizuno ,  Satoshi Ueda ,  Ippei Sawaki ,  Hisao Okuda ,  Fumio Yamagishi ,  Hiromitsu Soneda ,  Norinao Kouma

    IPC分类号： G02B26/08 ,  H02N1/00

    CPC分类号： G02B26/0841 ,  G02B26/085 ,  H02N1/008

    摘要： The micro-actuation element (X1) includes a movable unit (111), a frame (112) and a coupler (113) for connecting these, where the unit, the frame and the coupler are integrally formed in a material substrate having a multi-layer structure that consists of electroconductive layers (110a-110c), such as a core conduction layer (110b), and insulation layers (110d, 110e) intervening between the electroconductive layers (110a-110c). The movable unit (111) includes a first structure originating in the core conduction layer (110b). The frame (112) includes a second structure originating in the core conduction layer (110b). The coupler (113) includes a plurality of electrically separated torsion bars (113a, 113b) that originate in the core conduction layer (110b) and are connected continuously to the first structure and the second structure.

    摘要翻译： 微致动元件（X 1）包括可移动单元（111），框架（112）和用于连接它们的耦合器（113），其中单元，框架和耦合器一体形成在具有 由导电层（110a-110c），例如芯导电层（110b）和介于导电层（110a-110c）之间的绝缘层（110d，110e））组成的多层结构， 。 可移动单元（111）包括源于芯导电层（110b）的第一结构。 框架（112）包括源于芯导电层（110b）的第二结构。 耦合器（113）包括多个电分离的扭力杆（113a，113b），其产生在芯导电层（110b）中并连续地连接到第一结构和第二结构。

    Micromirror unit and method of making the same
    6.
    发明授权
    Micromirror unit and method of making the same 有权
    微镜单元及其制作方法

    公开(公告)号：US06887396B2

    公开(公告)日：2005-05-03

    申请号：US09950710

    申请日：2001-09-13

    申请人： Osamu Tsuboi ,  Satoshi Ueda ,  Yoshihiro Mizuno ,  Ippei Sawaki ,  Fumio Yamagishi

    发明人： Osamu Tsuboi ,  Satoshi Ueda ,  Yoshihiro Mizuno ,  Ippei Sawaki ,  Fumio Yamagishi

    IPC分类号： B81B3/00 ,  B81C1/00 ,  G02B26/08 ,  G11B7/09 ,  C03C15/00

    CPC分类号： B81C1/00142 ,  B81B3/0078 ,  B81B2201/042 ,  B81B2201/045 ,  B81B2203/0136 ,  B81B2203/0181 ,  B81B2203/058 ,  B81C1/00396 ,  G02B26/0841 ,  Y10S359/904

    摘要： A method is provided for making a micromirror unit which includes a frame, a mirror forming base, and bridges connecting the frame to the mirror forming base. The method includes the following steps. First, a first mask pattern is formed on a substrate for masking portions of the substrate which are processed into the frame and the mirror forming base. Then, a second mask pattern is formed on the substrate for masking portions of the substrate which are processed into the bridges. Then, the substrate is subjected to a first etching process with the first and the second mask patterns present as masking means. Then, the second mask pattern is removed selectively. Then, the substrate is subjected to a second etching process with the first mask pattern present as masking means. Finally, the first mask pattern is removed.

    摘要翻译： 提供了一种用于制造微镜单元的方法，该微镜单元包括框架，反射镜形成基座和将框架连接到反射镜形成基座的桥。 该方法包括以下步骤。 首先，在基板上形成第一掩模图案，以掩蔽基板的被加工成框架和反射镜形成基座的部分。 然后，在衬底上形成第二掩模图案，用于掩蔽加工成桥的衬底部分。 然后，以第一和第二掩模图形作为掩模装置对基板进行第一蚀刻处理。 然后，选择性地去除第二掩模图案。 然后，以第一掩模图案作为掩模装置对基板进行第二蚀刻处理。 最后，删除第一个掩模图案。

    Method for manufacturing microstructure
    10.
    发明授权
    Method for manufacturing microstructure 有权
    微结构制造方法

    公开(公告)号：US07033515B2

    公开(公告)日：2006-04-25

    申请号：US10686764

    申请日：2003-10-17

    申请人： Norinao Kouma ,  Yoshihiro Mizuno ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

    发明人： Norinao Kouma ,  Yoshihiro Mizuno ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00182 ,  B81B2201/0235 ,  B81B2201/033 ,  B81B2201/042 ,  B81C2201/014 ,  B81C2201/0174 ,  G02B26/0841

    摘要： A method is for manufacturing a microstructure having a thin-walled portion with use of a material substrate. The material substrate has a laminated structure which includes a first conductor layer 101, a second conductor layer 102, a third conductor layer 103, a first insulating layer 104 interposed between the first conductor layer and the second conductor layer, and a second insulating layer 105 interposed between the second conductor layer and the third conductor layer. The first insulating layer is patterned to have a first masking part for covering a thin-wall forming region of the second conductor layer. The second insulating layer is patterned to have a second masking part for covering the thin-wall forming region of the second conductor layer. The method includes forming the thin-walled portion in the second conductor portion by etching the material substrate from the first conductor layer down to the second insulating layer via a mask pattern 58 including a non-masking region corresponding to the thin-wall forming region of the second conductor layer.

    摘要翻译： 一种使用材料基板制造具有薄壁部分的微结构的方法。 材料基板具有包括第一导体层101，第二导体层102，第三导体层103，插入在第一导体层和第二导体层之间的第一绝缘层104和第二绝缘层105的层叠结构 插入在第二导体层和第三导体层之间。 第一绝缘层被图案化以具有用于覆盖第二导体层的薄壁形成区域的第一掩模部分。 图案化第二绝缘层以具有用于覆盖第二导体层的薄壁形成区域的第二掩模部分。 该方法包括：通过掩模图案58将材料基板从第一导体层蚀刻到第二绝缘层，从而在第二导体部分中形成薄壁部分，掩模图案58包括对应于薄壁形成区域的非屏蔽区域 第二导体层。